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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST)  SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 09:00 |
Osaka | Central Electric Club | [Invited Talk]
SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) SDM2016-60 ICD2016-28 |
[more] | SDM2016-60 ICD2016-28 pp.83-87 |
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
| SDM | 2015-01-27 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143 |
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] | SDM2014-143 pp.33-36 |
| SDM | 2015-01-27 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-145 |
[more] | SDM2014-145 pp.41-44 |
| SDM | 2015-01-27 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146 |
Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] | SDM2014-146 pp.45-48 |
| ICD, SDM | 2014-08-04 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] | SDM2014-67 ICD2014-36 pp.29-34 |
| ICD | 2014-04-18 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multigate FinFET Device and Circuit Technology for 10nm and Beyond Meishoku Masahara, Kazuhiko Endo, Shin-ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota (AIST) ICD2014-15 |
One of the biggest challenges for the VLSI circuits with 20-nm-technology nodes and beyond is to overcome the issue of a... [more] | ICD2014-15 pp.77-82 |
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| SDM, ICD | 2013-08-01 09:25 |
Ishikawa | Kanazawa University | Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 |
A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The... [more] | SDM2013-66 ICD2013-48 pp.7-12 |
| SDM | 2012-11-16 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 |
Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device model... [more] | SDM2012-111 pp.63-68 |
| SDM | 2012-06-21 15:30 |
Aichi | VBL, Nagoya Univ. | Schottky Barrier Height Lowering by Dopant Segregation and Exact Control of Junction Position in Epitaxial NiSi2 Source/Drain Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2012-57 |
[more] | SDM2012-57 pp.75-80 |
| SDM | 2010-06-22 09:55 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2010-34 |
Process technology with atomic-scale precision is indispensable for fabrication of silicon nanowire MOSFETs. We present ... [more] | SDM2010-34 pp.5-10 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| SDM | 2008-06-10 10:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) SDM2008-51 |
[more] | SDM2008-51 pp.53-58 |
| SDM | 2007-06-08 15:05 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Characteristics of HfO2/Ge-nitride/Ge MIS structures Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo) SDM2007-50 |
[more] | SDM2007-50 pp.101-106 |
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