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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2022-04-22
14:10
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing
Rostislav Velichko (KUT), Yusaku Magari (Shimane Univ.), Mamoru Furuta (KUT) SDM2022-4 OME2022-4
(To be available after the conference date) [more] SDM2022-4 OME2022-4
pp.17-20
OME, SDM 2022-04-23
11:50
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
[Invited Talk] High-mobility (>100 cm2V-1s-1) In2O3:H Thin-film Transistors by Solid-phase Crystallization
Yusaku Magari (Shimane Univ.), Taiki Kataoka (Kochi Univ. of Tech.), Wenchang Yeh (Shimane Univ.), Mamoru Furuta (Kochi Univ. of Tech.) SDM2022-13 OME2022-13
(To be available after the conference date) [more] SDM2022-13 OME2022-13
pp.61-64
EID, SDM, ITE-IDY [detail] 2020-12-02
14:30
Online Online [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] EID2020-10 SDM2020-44
pp.37-41
EID, SDM, ITE-IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
 [more]
EID, SDM, ITE-IDY [detail] 2018-12-25
14:30
Kyoto   Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.)
 [more]
SDM, OME 2018-04-07
13:10
Okinawa Okinawaken Seinen Kaikan [Invited Talk] properties of IGZO thin-film transistors.
Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.) SDM2018-6 OME2018-6
(To be available after the conference date) [more] SDM2018-6 OME2018-6
pp.25-28
SDM, OME 2018-04-07
14:15
Okinawa Okinawaken Seinen Kaikan Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device.
Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] SDM2018-8 OME2018-8
pp.33-36
SDM, OME 2016-04-09
10:10
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications
Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.) SDM2016-13 OME2016-13
 [more] SDM2016-13 OME2016-13
pp.53-56
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
15:04
Toyama Toyama Univ. Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film transistors -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.) EID2015-31
 [more] EID2015-31
pp.41-44
 Results 1 - 9 of 9  /   
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