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All Technical Committee Conferences (Searched in: Recent 10 Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2025-01-24 14:20 |
Tokyo | fukaya-kouminkan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of GaN-based HEMTs for 100 GHz Band 1 Watt Class Power Amplifiers Shiro Ozaki, Yusuke Kumazaki, Yasuhiro Nakasha, Atsushi Yamada, Naoki Hara, Toshihiro Ohki (Fujitsu)  ED2024-81 MW2024-167 |
This study describes high-power and high-efficiency 100 GHz band GaN-based high-electron-mobility transistors (HEMTs) fo... [more] | ED2024-81 MW2024-167 pp.73-76 |
| ED, MWPTHz | 2024-12-20 11:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
Experiment of Fixed Wireless Data Transmission at 100GHz Band toward 6G Masafumi Tsutsui, Liang Zhou, Yasuhiro Nakasha, Takashi Dateki, Yusuke Kumazaki, Shiro Ozaki, Toshihiro Ohki (FUJITSU) ED2024-62 MWPTHz2024-74 |
[more] | ED2024-62 MWPTHz2024-74 pp.30-33 |
| ED, CPM, LQE | 2024-11-29 16:20 |
Aichi | Nagoya Institute of Technology | Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu) ED2024-38 CPM2024-82 LQE2024-69 |
In this study, we successfully demonstrated the improved performance of InP-based metal-oxide-semiconductor high-electro... [more] | ED2024-38 CPM2024-82 LQE2024-69 pp.73-78 |
| LQE, ED, CPM | 2023-11-30 14:20 |
Shizuoka | Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] | ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
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| MW, ED | 2021-01-29 14:25 |
Online | Online | Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] | ED2020-34 MW2020-87 pp.34-37 |
| MW, ED | 2019-01-17 15:00 |
Tokyo | Hitachi, Central Research Lab. | Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] | ED2018-77 MW2018-144 pp.51-54 |
| CPM, LQE, ED | 2016-12-12 17:00 |
Kyoto | Kyoto University | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] | ED2016-66 CPM2016-99 LQE2016-82 pp.45-50 |
| ED | 2015-08-04 12:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electrochemical formation and UV photoresponse properties of GaN porous structures Hirofumi Kida, Yusuke Kumazaki, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-53 |
Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and sp... [more] | ED2015-53 pp.51-54 |
| ED, CPM, SDM | 2015-05-29 09:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-28 CPM2015-13 SDM2015-30 |
[more] | ED2015-28 CPM2015-13 SDM2015-30 pp.63-66 |
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