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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2023-12-22
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
A Waveguide Antenna Array Module for Sub-THz Communications
Shiro Ozaki, Naoya Okamoto (Fujitsu), Takuichi Hirano (TCU), Yasuhiro Nakasha, Yusuke Kumazaki, Toshihiro Ohki, Naoki Hara (Fujitsu)
LQE, ED, CPM 2023-11-30
Shizuoka   Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] ED2023-17 CPM2023-59 LQE2023-57
MW, ED 2021-01-29
Online Online Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87
 [more] ED2020-34 MW2020-87
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] ED2018-77 MW2018-144
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process
Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] ED2016-66 CPM2016-99 LQE2016-82
ED 2015-08-04
Tokyo Kikai-Shinko-Kaikan Bldg. Electrochemical formation and UV photoresponse properties of GaN porous structures
Hirofumi Kida, Yusuke Kumazaki, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-53
Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and sp... [more] ED2015-53
ED, CPM, SDM 2015-05-29
Aichi Venture Business Laboratory, Toyohashi University of Technology Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-28 CPM2015-13 SDM2015-30
 [more] ED2015-28 CPM2015-13 SDM2015-30
CPM, LQE, ED 2013-11-29
Osaka   Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-88 CPM2013-147 LQE2013-123
Optical properties of GaN porous structures formed by the electrochemical process were investigated. We conducted the ph... [more] ED2013-88 CPM2013-147 LQE2013-123
SDM, ED, CPM 2013-05-17
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by the Electrochemical process
Yusuke Kumazaki, Ryohei Jinbo, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-27 CPM2013-12 SDM2013-34
We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using p... [more] ED2013-27 CPM2013-12 SDM2013-34
 Results 1 - 9 of 9  /   
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