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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
PRMU, IBISML, IPSJ-CVIM |
2024-03-04 09:24 |
Hiroshima |
Hiroshima Univ. Higashi-Hiroshima campus (Primary: On-site, Secondary: Online) |
PRMU2023-66 |
(To be available after the conference date) [more] |
PRMU2023-66 pp.88-93 |
ED, CPM, SDM |
2015-05-28 16:05 |
Aichi |
Venture Business Laboratory, Toyohashi University of Technology |
Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] |
ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
ED, CPM, SDM |
2015-05-28 17:05 |
Aichi |
Venture Business Laboratory, Toyohashi University of Technology |
Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] |
ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
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