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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2012-10-27 12:15 |
Niigata |
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Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] |
CPM2012-111 pp.97-100 |
CPM |
2012-08-08 13:50 |
Yamagata |
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Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato (Nagaoka Univ. Technol.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirsaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-35 |
[more] |
CPM2012-35 pp.11-15 |
CPM |
2011-08-10 14:15 |
Aomori |
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Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2011-59 |
Ge and SiC nanodots were formed on Si(001) 3˚ off substrates after the formation of Si c(4x4) structure using monom... [more] |
CPM2011-59 pp.15-20 |
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