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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-07-02
15:05		 Tokyo Tokyo Inst. of Tech. Ookayama Campus Impact of Floating Body type DRAM with the Vertical MOSFET
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST) ED2010-98 SDM2010-99		 Several kinds of capacitor-less DRAM cells based on planar SOI-MOSFET technology have been proposed and researched to ov... [more] ED2010-98 SDM2010-99
pp.211-216
SDM, ED 2008-07-10
10:40		 Hokkaido Kaderu２・７ Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa (Tohoku Univ.) ED2008-59 SDM2008-78		 In this study, I have numerically investigated the temperature distribution of n-type Si Nano Wire MOS transistor (NW-MO... [more] ED2008-59 SDM2008-78
pp.101-105
SDM, ED 2008-07-10
10:55		 Hokkaido Kaderu２・７ Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-60 SDM2008-79		 In this paper, the device performances of sub-10nm Vertical MOSFETs are investigated. One of the drawbacks of convention... [more] ED2008-60 SDM2008-79
pp.107-111
SDM, ED 2008-07-11
11:05		 Hokkaido Kaderu２・７ Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations
Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-83 SDM2008-102		 We propose Current Controlled MOS Current Mode Logic (CC-MCML) and have succeeded in fabricating CC-MCML with 180nm CMOS... [more] ED2008-83 SDM2008-102
pp.233-238
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