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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2017-04-21 13:25 |
Tokyo |
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[Invited Lecture]
Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16 |
In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] |
ICD2017-16 pp.85-88 |
SDM |
2016-06-29 10:00 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32 |
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] |
SDM2016-32 pp.1-4 |
SDM |
2016-01-28 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121 |
High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a... [more] |
SDM2015-121 pp.5-8 |
SDM, ICD |
2015-08-24 15:00 |
Kumamoto |
Kumamoto City |
[Invited Talk]
Recent progress and challenges of high-mobility III-V/Ge CMOS technologies for low power LSI applications Toshifumi Irisawa (AIST), Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Tsutomu Tezuka (AIST/Toshiba), Tatsurou Maeda, Hiroyuki Ota, Kazuhiko Endo (AIST) SDM2015-63 ICD2015-32 |
[more] |
SDM2015-63 ICD2015-32 pp.31-36 |
SDM |
2015-01-27 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
High-performance tri-gate poly-Ge Junction-less p- and n-MOSFETs Fabricated by Flash Lamp Annealing Process Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta, Takahiro Mori, Masahiro Koike, Tsutomu Tezuka (AIST) SDM2014-138 |
Poly-crystalline Ge (poly-Ge) layer can be candidate for the channel of stacking 3D-CMOS from the viewpoint of low-therm... [more] |
SDM2014-138 pp.13-16 |
SDM |
2008-06-10 10:55 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) SDM2008-51 |
[more] |
SDM2008-51 pp.53-58 |
ICD, SDM |
2007-08-24 10:20 |
Hokkaido |
Kitami Institute of Technology |
[Special Invited Talk]
Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87 |
In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characte... [more] |
SDM2007-159 ICD2007-87 pp.101-106 |
ICD, SDM |
2005-08-19 10:00 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
[Special Invited Talk]
HfSiON
-- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue -- Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) |
The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] |
SDM2005-146 ICD2005-85 pp.19-24 |
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