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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
11:40		 Osaka Osaka City University Media Center Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate
Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115		 In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] ED2015-83 CPM2015-118 LQE2015-115
pp.77-80
ED, LQE, CPM 2012-11-29
11:55		 Osaka Osaka City University High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch)
Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC) ED2012-69 CPM2012-126 LQE2012-97		  [more] ED2012-69 CPM2012-126 LQE2012-97
pp.17-20
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