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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, CPM, ED 2010-05-13
14:20
Shizuoka Shizuoka University (Hamamatsu Campus) Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure
Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA) ED2010-19 CPM2010-9 SDM2010-19
 [more] ED2010-19 CPM2010-9 SDM2010-19
pp.11-16
SDM, CPM, ED 2010-05-14
14:20
Shizuoka Shizuoka University (Hamamatsu Campus) Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] ED2010-32 CPM2010-22 SDM2010-32
pp.81-85
SDM, ED 2009-06-25
13:15
Overseas Haeundae Grand Hotel, Busan, Korea Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN
Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride ... [more] ED2009-82 SDM2009-77
pp.141-144
ED, CPM, SDM 2009-05-15
10:55
Aichi Satellite Office, Toyohashi Univ. of Technology Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells.
Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] ED2009-30 CPM2009-20 SDM2009-20
pp.65-70
ED, CPM, SDM 2009-05-15
11:20
Aichi Satellite Office, Toyohashi Univ. of Technology Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] ED2009-31 CPM2009-21 SDM2009-21
pp.71-76
CPM, ED, SDM 2008-05-15
15:50
Aichi Nagoya Institute of Technology Investigation of deep levels in GaPN by photoconductivity transient measurement
Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] ED2008-7 CPM2008-15 SDM2008-27
pp.29-34
CPM, ED, SDM 2008-05-15
16:15
Aichi Nagoya Institute of Technology Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy.
Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.)
III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more]
ED, CPM, SDM 2006-05-19
09:50
Aichi VBL, Toyohashi University of Technology Electrical Properties of GaPN
Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.)
 [more] ED2006-31 CPM2006-18 SDM2006-31
pp.61-65
ED, CPM, SDM 2006-05-19
10:15
Aichi VBL, Toyohashi University of Technology InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] ED2006-32 CPM2006-19 SDM2006-32
pp.67-72
ED, CPM, SDM 2006-05-19
10:50
Aichi VBL, Toyohashi University of Technology Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits
Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] ED2006-33 CPM2006-20 SDM2006-33
pp.73-78
 Results 1 - 10 of 10  /   
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