|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, CPM, ED |
2010-05-13 14:20 |
Shizuoka |
Shizuoka University (Hamamatsu Campus) |
Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA) ED2010-19 CPM2010-9 SDM2010-19 |
[more] |
ED2010-19 CPM2010-9 SDM2010-19 pp.11-16 |
SDM, CPM, ED |
2010-05-14 14:20 |
Shizuoka |
Shizuoka University (Hamamatsu Campus) |
Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32 |
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] |
ED2010-32 CPM2010-22 SDM2010-32 pp.81-85 |
SDM, ED |
2009-06-25 13:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77 |
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride ... [more] |
ED2009-82 SDM2009-77 pp.141-144 |
ED, CPM, SDM |
2009-05-15 10:55 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20 |
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] |
ED2009-30 CPM2009-20 SDM2009-20 pp.65-70 |
ED, CPM, SDM |
2009-05-15 11:20 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] |
ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
CPM, ED, SDM |
2008-05-15 15:50 |
Aichi |
Nagoya Institute of Technology |
Investigation of deep levels in GaPN by photoconductivity transient measurement Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27 |
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] |
ED2008-7 CPM2008-15 SDM2008-27 pp.29-34 |
CPM, ED, SDM |
2008-05-15 16:15 |
Aichi |
Nagoya Institute of Technology |
Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy. Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) |
III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more] |
|
ED, CPM, SDM |
2006-05-19 09:50 |
Aichi |
VBL, Toyohashi University of Technology |
Electrical Properties of GaPN Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) |
[more] |
ED2006-31 CPM2006-18 SDM2006-31 pp.61-65 |
ED, CPM, SDM |
2006-05-19 10:15 |
Aichi |
VBL, Toyohashi University of Technology |
InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] |
ED2006-32 CPM2006-19 SDM2006-32 pp.67-72 |
ED, CPM, SDM |
2006-05-19 10:50 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] |
ED2006-33 CPM2006-20 SDM2006-33 pp.73-78 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|