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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 65  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
AP 2022-10-19
09:30
Gifu GIFU CITY CULTURE CENTER
(Primary: On-site, Secondary: Online)
[Poster Presentation] Multi-Stage Tapers Improving F/S Ratios of Vivaldi Antennas in Wider Bands
Daisuke Homma, Mayumi Matsunaga (Shizuoka Univ.)
(To be available after the conference date) [more]
AP 2022-10-19
09:30
Gifu GIFU CITY CULTURE CENTER
(Primary: On-site, Secondary: Online)
[Poster Presentation] A Bowtie Array Antenna using Parasitic Elements for Realizing Wideband Unidirectional Radiation Patterns
Masaki Adachi, Mayumi Matsunaga (Shizuoka Univ.)
(To be available after the conference date) [more]
CPM 2022-03-01
13:30
Online Online Water vapor gas diffusion barrier by using room temperature ALD
Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) CPM2021-73
In this paper, we will report water vapor gas barrier films prepared by room temperature atomic layer deposition(RT-ALD)... [more] CPM2021-73
pp.7-10
EMT, IEE-EMT 2021-11-04
13:00
Online Online On the Calderon preconditioning with an oblique mesh for the isogeometric boundary element method for the Maxwell equations
Yuusuke Takeuchi, Kazuki Niino (Kyoto Univ.) EMT2021-29
In this study, we consider the Calderón’s preconditioning on oblique meshes in the isogeometric bound- ary element metho... [more] EMT2021-29
pp.7-9
SDM 2021-06-22
13:10
Online Online [Memorial Lecture] Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2021-22
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] SDM2021-22
pp.1-6
LQE, CPM, ED 2020-11-26
13:50
Online Online Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] ED2020-8 CPM2020-29 LQE2020-59
pp.29-32
SDM 2020-10-22
14:50
Online Online Modification of states of copper and copper oxide due to IPA treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-19
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] SDM2020-19
pp.25-29
SDM 2020-01-28
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Masaki Noguchi, Tatsunori Isogai, Hiroyuki Yamashita, Keiichi Sawa, Ryota Fujitsuka, Takanori Yamanaka, Shunsuke Okada, Tomonori Aoyama, Fumiki Aiso, Junko Abe, Yoshiro Ogawa, Seiji Nakagawa, Hideshi Miyajima (KIOXIA) SDM2019-82
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated tunnel SiON and charge-trap SiN film... [more] SDM2019-82
pp.1-4
CPM, LQE, ED 2019-11-21
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] ED2019-41 CPM2019-60 LQE2019-84
pp.37-40
IA, SITE, IPSJ-IOT [detail] 2019-03-08
14:25
Tokushima Grand XIV Naruto Estimation of Data Prooagation Time on the Bitcoin Network
Reiki Kanda, Kazuyuki Shudo (Tokyo Tech) SITE2018-85 IA2018-77
The goal of this research is to estimate data propagation time on the Bitcoin network. The means here is Network Coordin... [more] SITE2018-85 IA2018-77
pp.317-322
IA 2019-01-25
16:50
Tokyo Tokyo Metropolitan Univ. Akihabara Satellite Campus A Wireless Ad Hoc Networks Localization Method Robust for Addition of Nodes using Improved Vivaldi
Takafumi Okuyama, Takafumi Hayashi (Niigata Univ.) IA2018-59
Currently, various services using the location information of the terminal (node) are deployed.
Although GPS is mainly ... [more]
IA2018-59
pp.31-37
QIT
(2nd)
2018-06-04
13:20
Hiroshima ICCH Ran [Poster Presentation] Serial-parallel conversion with heralded single photons
Takayuki Kiyohara, Okamoto Ryo, Takeuchi Shigeki (Kyoto Univ.)
To realize large scale photonic quantum technologies, it is important to use a source that emits multipleindistinguishab... [more]
OME 2017-12-01
13:10
Saga Sun Messe Tosu Smart polishing by applying the limelight Dilatancy-Pad -- Evaluation for Dilatancy-Pad materials and SiC substrates's polishing characteristics --
Kiyoshi Seshimo, Tshiro Doi, Masanori Ohtsubo, Keiichi Tukamoto (Kyushu Univ.), Masataka Takagi (FUJIBO Ehime), Daizo Ichikawa (Fjikoshi Machinery) OME2017-42
Dilatancy material has hold the key to construct Smart-polishing technology for hard-to-process material substrates such... [more] OME2017-42
pp.31-36
LQE, CPM, ED 2017-12-01
13:45
Aichi Nagoya Inst. tech. Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-64 CPM2017-107 LQE2017-77
As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-de... [more] ED2017-64 CPM2017-107 LQE2017-77
pp.73-76
SDM 2017-10-26
10:50
Miyagi Niche, Tohoku Univ. Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] SDM2017-57
pp.39-44
IA 2017-10-13
15:40
Tokyo Fukutake Hall, The University of Tokyo An Experiment on Estimation of Data Propagation Time on the Bitcoin Network
Reiki Kanda, Masaaki Ohnishi, Kazuyuki Shudo (Tokyo Inst. of Tech.) IA2017-20
The goal of this research is to estimate data propagation time on the Bitcoin network. The means here is Network Coordin... [more] IA2017-20
pp.7-12
ED 2017-04-20
13:30
Miyagi   Effect of ALD deposited ZrO2 coating on TiO2 photo-electrodes in dye sensitized solar cells
Yusuke Noguchi, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-1
Increase of dye adsorption on TiO_2 electrode surfaces and supression of the recombination of the electron at the interf... [more] ED2017-1
pp.1-4
ED 2017-04-20
15:50
Miyagi   Fabrication of flexible Inorganic EL
Makoto Ishikawa, Kensaku kanomaka, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-6
(To be available after the conference date) [more] ED2017-6
pp.21-24
CPM, LQE, ED 2016-12-12
15:45
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
pp.31-34
SDM 2016-10-27
10:00
Miyagi Niche, Tohoku Univ. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] SDM2016-73
pp.27-30
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