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All Technical Committee Conferences (Searched in: Recent 10 Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2024-12-20 10:40 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Double δ-doped Ga0.22In0.78Sb Channel HEMTs with over 450-GHz-fmax Ryuto Machida (NICT), Rikuto Yoshida, Naoyuki Kishimoto, Ryosuke Kouno, Yuuto Isomae, Reo Ebihara, Takuya Hayashi, Tomoki Jinnai, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS)  ED2024-61 MWPTHz2024-73 |
To further improve the RF characteristics of InSb-based high electron mobility transistors (HEMTs), we fabricated double... [more] | ED2024-61 MWPTHz2024-73 pp.26-29 |
| ED, SDM, CPM | 2024-05-24 16:15 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Performance Analysis of Wide Band-gap Semiconductor SBD for Microwave Power Transmission Yasuo Ohno, Hiroko Itoh, Tomomi Hiraoka (Laser Systems), Masataka Higashiwaki (Osaka Metropolitan Univ.) ED2024-10 CPM2024-10 SDM2024-17 |
Circuit characteristics of Schottky barrier diodes used in microwave power receiving circuits were analyzed. In high-fre... [more] | ED2024-10 CPM2024-10 SDM2024-17 pp.33-36 |
| OME | 2024-02-22 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Lecture]
Vapor deposition of naphthalenediimide derivatives Hiroaki Usui, Suguru Kuratomi, Takuya Izumi, Yoko Tatewaki (Tokyo Univ. Agricul. & Technol.), Satoshi Usui (Niigata Univ.) OME2023-92 |
Naphthalenediimide derivatives with benzyl and vinyl-benzyl groups were newly synthesized and their thin films were prep... [more] | OME2023-92 pp.30-35 |
| CPM | 2022-03-01 13:30 |
Online | Online | Water vapor gas diffusion barrier by using room temperature ALD Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) CPM2021-73 |
In this paper, we will report water vapor gas barrier films prepared by room temperature atomic layer deposition(RT-ALD)... [more] | CPM2021-73 pp.7-10 |
| SDM | 2022-02-04 09:05 |
Online | Online | [Invited Talk]
Quantitative evaluation on barrier property of ultra-thin PVD-Co(W) films using lag-time method Takeshi Momose, Taewoong Kim, Yubin Deng, Momoko Deura (UTokyo), Akira Matsuo, Nobuo Yamaguchi (CANON ANELVA), Yukihiro Shimogaki (UTokyo) SDM2021-74 |
For the development of ultra-thin barrier layers for Cu interconnections in ultra large scale integration, it is essenti... [more] | SDM2021-74 pp.1-4 |
| SDM | 2021-02-05 13:45 |
Online | Online | Characteristic properties of Co-Zr alloy as a single-layer barrier Yuki Yamada, Masataka Yahagi, Junichi Koike (Tohoku Univ.) SDM2020-56 |
The purpose of this work is to replace the thick double layer of Ta liner and TaN barrier with a single layer of Co allo... [more] | SDM2020-56 pp.7-10 |
| HCS | 2021-01-23 15:00 |
Online | Online | Basic study of sound design for acoustic cursor on a video game for visually impaired Zhaohong Deng, Shunichi Yonemura (SIT) HCS2020-55 |
In the action games for visually impaired, it is necessary for players to recognize game objects by sound. In the previo... [more] | HCS2020-55 pp.17-22 |
| R | 2020-11-30 14:55 |
Online | Online | Analysis for Degraded MLCC Using Voltage Contrast Method in SEM Akira Saito (Murata) R2020-27 |
To ensure the reliability of multi-layer ceramic capacitor (MLCC) while its miniaturization is accelerating, it is neces... [more] | R2020-27 pp.21-24 |
| SDM | 2020-02-07 10:45 |
Tokyo | Tokyo University-Hongo | [Invited Talk]
Role of electroless-Ni plating in high-aspect-ratio TSV fabrication for 3D integration and packaging Murugesan Mariappan, Takafumi Fukushima (Tohoku Univ.) SDM2019-91 |
[more] | SDM2019-91 pp.15-19 |
| SDM | 2019-10-24 09:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) SDM2019-59 |
Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dim... [more] | SDM2019-59 pp.29-33 |
| SDM | 2019-10-24 10:50 |
Miyagi | Niche, Tohoku Univ. | Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-61 |
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with d... [more] | SDM2019-61 pp.39-43 |
| SDM | 2018-10-18 10:50 |
Miyagi | Niche, Tohoku Univ. | Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59 |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] | SDM2018-59 pp.35-40 |
| ED | 2017-08-10 09:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Bio-image sensor for multi-detection of ATP, ACh, and hydrogen ion
-- Enhanced discrimination by hydrogen ion diffusion-barrier layers -- You-Na Lee, Tomoko Horio, Koichi Okumura, Tatsuya Iwata, Kazuhiro Takahashi, Kazuaki Sawada (TUT) ED2017-33 |
In our previous work, we reported a bio-image sensor for multi-detection of neurotransmitters such as adenosine triphosp... [more] | ED2017-33 pp.33-36 |
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| SDM | 2015-06-19 14:35 |
Aichi | VBL, Nagoya Univ. | Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49 |
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] | SDM2015-49 pp.57-61 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
| SDM | 2015-03-02 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165 |
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] | SDM2014-165 pp.17-22 |
| SDM | 2015-03-02 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Sub-nanoscale Structure and Barrier Performance of CVD-Cu(Mn)/ALD-Co(W) Interconnect System Proved Using 3D Atom Probe Kohei Shima (The Univ. of Tokyo), Yuan Tu, Bin Han, Hisashi Takamizawa (Tohoku Univ.), Hideharu Shimizu (The Univ. of Tokyo), Yasuo Shimizu (Tohoku Univ.), Takeshi Momose (The Univ. of Tokyo), Koji Inoue, Yasuyoshi Nagai (Tohoku Univ.), Yukihiro Shimogaki (The Univ. of Tokyo) SDM2014-169 |
We propose new materials system of a single layered Co(W) barrier/liner layer coupled with a Cu(Mn) alloy seed layer for... [more] | SDM2014-169 pp.39-44 |
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