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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-02-23
10:10
Okinawa Okinawaken-Seinen-Kaikan CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films
Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.) ED2009-206 SDM2009-203
We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx pa... [more] ED2009-206 SDM2009-203
pp.59-63
ED 2007-11-27
13:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ED, CPM, LQE 2006-10-05
15:45
Kyoto   Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT)
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] ED2006-158 CPM2006-95 LQE2006-62
pp.35-38
MW, ED 2005-11-17
14:00
Saga   A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications
Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.)
A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] ED2005-166 MW2005-121
pp.45-49
 Results 1 - 4 of 4  /   
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