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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 33  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE 2023-01-19
Fukuoka Kyushu Institute of Technology
(Primary: On-site, Secondary: Online)
A circuit model of latch-type RF-DC charge pump for microwave wireless power transfer
Ryoma Kotsubo, Toru Tanzawa (Shizuoka Univ) EE2022-31
In recent years, microwave wireless power transmission technology has attracted attention as a means of supplying power ... [more] EE2022-31
EE, OME, CPM 2022-12-09
(Primary: On-site, Secondary: Online)
Investigation for one-chip high functionality gate driver IC
Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] EE2022-22 CPM2022-77 OME2022-35
ICD, SDM, ITE-IST [detail] 2022-08-08
Online   Sub-50-mV Input Boost Converter for Extremely Low-Voltage Thermal Energy Harvesting
Hikaru Sebe, Daisuke Kanemoto, Tetsuya Hirose (Osaka Univ.) SDM2022-39 ICD2022-7
We propose a voltage boost converter for sub-50-mV thermal energy harvesting. The proposed converter consists of charge ... [more] SDM2022-39 ICD2022-7
EE 2022-01-28
Online Online Numerical investigations of fully integrated transformerless floating gate driver IC
Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2021-49
One of the key issues of the floating gate driver circuit are to reduce the volume. To eliminate the transformer is one ... [more] EE2021-49
MW 2021-11-18
Kagoshima Kagoshima University
(Primary: On-site, Secondary: Online)
Development of 1mW Class Rectenna for 920-MHz Band Wireless Power Transfer System
Katsumi Kawai, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.) MW2021-71
The time and effort required to replace and recharge the batteries of wearable devices has become a problem in medical a... [more] MW2021-71
CAS, ICTSSL 2021-01-29
Online Online Reducing chip area and improving efficiency of a charge pump by switching the input voltage source and controlling the number of stages
Shunsuke Hironaga, Takahide Sato, Satomi Ogawa (Yamanashi Univ) CAS2020-64 ICTSSL2020-49
A step-up/step-down power supply circuit with a wide input/output voltage range, which has only one switch in its curren... [more] CAS2020-64 ICTSSL2020-49
ICD, SDM, ITE-IST [detail] 2020-08-06
Online Online A control circuit design of power converter with time-division input impedance modulation for energy transducer with high output impedance
Kazuma Koketsu, Toru Tanzawa (Shizuoka Univ.) SDM2020-3 ICD2020-3
This paper proposes a practical control circuit design of power converter for energy transducer with high output impedan... [more] SDM2020-3 ICD2020-3
ICD, SDM, ITE-IST [detail] 2020-08-06
Online Online A charge pump circuit for very low voltage applications
Keiichi Nagaoka, Cong-Kha Pham (UEC) SDM2020-4 ICD2020-4
In recent years, energy harvesting, which harvests electric power from energy existing in the environment, has attracted... [more] SDM2020-4 ICD2020-4
WPT 2020-06-11
Online Online Study on an Asymmetric Rectifier for Inductor-less Load Impedance Conversion in Wireless Power Transfer Systems
Yoshiaki Narusue, Jaewon Shin, Hiroyuki Morikawa (The Univ. of Tokyo) WPT2020-14
In this paper, we study an asymmetric rectifier circuit for realizing a load impedance conversion mechanism without an i... [more] WPT2020-14
ED, SDM 2018-02-28
Hokkaido Centennial Hall, Hokkaido Univ. Low-temperature charge pumping on silicon-on-insulator devices
Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] ED2017-115 SDM2017-115
ICD, CPSY, CAS 2017-12-14
Okinawa Art Hotel Ishigakijima A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting
Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88
Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore powe... [more] CAS2017-91 ICD2017-79 CPSY2017-88
WPT 2017-03-07
Kyoto Kyoto Univ. Uji Campus WPT2016-79 To reduce the weight of a satellite, an internal wireless system for satellites was proposed in a previous study. It is ... [more] WPT2016-79
ED, SDM 2017-02-24
Hokkaido Centennial Hall, Hokkaido Univ. Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices
Tokinobu Watanabe (Shizuoka Univ./Univ. Toyama), Hori Masahiro, Ono Yukinori (Shizuoka Univ.) ED2016-131 SDM2016-148
Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-... [more] ED2016-131 SDM2016-148
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Novel Functional Passive Element for Future Analogue Signal Processing -- Fabrication and Application of the VO2 Volatile Switch --
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] SDM2016-138
(Joint) [detail]
Osaka Ritsumeikan University, Osaka Ibaraki Campus Fully Integrated, 100-mV Minimum Input Voltage Converter with Gate-Boosted Charge Pump for Energy Harvesting
Hiroshi Fuketa, Shin-ichi O'uchi, Takashi Matsukawa (AIST) CPM2016-87 ICD2016-48 IE2016-82
A fully integrated step-up DC-DC converter for energy harvesting applications is presented. A minimum startup voltage of... [more] CPM2016-87 ICD2016-48 IE2016-82
SDM 2016-11-10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] SDM2016-80
SDM 2016-11-11
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method -- Toward Advanced Atomistic Trap Physics --
Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] SDM2016-86
ICD, SDM, ITE-IST [detail] 2016-08-01
Osaka Central Electric Club A Low-Power Mixed-Domain Delta-Sigma Time-to-Digital Converter Using Charge-Pump and SAR ADC
Anugerah Firdauzi, Zule Xu, Masaya Miyahara, Akira Matsuzawa (Tokyo Tech.) SDM2016-50 ICD2016-18
This paper presents a time-to-digital converter (TDC) using delta-sigma architecture which utilizes a charge pump as the... [more] SDM2016-50 ICD2016-18
ED, SDM 2016-03-03
Hokkaido Centennial Hall, Hokkaido Univ. Low-temperature charge pumping for SiO2/Si interface states
Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] ED2015-125 SDM2015-132
SDM, ED 2015-02-05
Hokkaido Hokkaido Univ. Accuracy of Time Domain Charge Pumping
Tokinobu Watanabe, Masahiro Hori (Univ. of Toyama), Toshiaki Tsuchiya (Shimane Univ.), Yukinori Ono (Univ. of Toyama) ED2014-140 SDM2014-149
The charge pumping (CP) is method that is used for analyzing interface defects. The CP method evaluates interface defect... [more] ED2014-140 SDM2014-149
 Results 1 - 20 of 33  /  [Next]  
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