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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EE | 2023-01-19 10:00 |
Fukuoka | Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
A circuit model of latch-type RF-DC charge pump for microwave wireless power transfer Ryoma Kotsubo, Toru Tanzawa (Shizuoka Univ)  EE2022-31 |
In recent years, microwave wireless power transmission technology has attracted attention as a means of supplying power ... [more] | EE2022-31 pp.6-11 |
| EE, OME, CPM | 2022-12-09 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] | EE2022-22 CPM2022-77 OME2022-35 pp.18-23 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 14:40 |
Online | Sub-50-mV Input Boost Converter for Extremely Low-Voltage Thermal Energy Harvesting Hikaru Sebe, Daisuke Kanemoto, Tetsuya Hirose (Osaka Univ.) SDM2022-39 ICD2022-7 |
We propose a voltage boost converter for sub-50-mV thermal energy harvesting. The proposed converter consists of charge ... [more] | SDM2022-39 ICD2022-7 pp.21-26 |
|
| EE | 2022-01-28 14:45 |
Online | Online | Numerical investigations of fully integrated transformerless floating gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2021-49 |
One of the key issues of the floating gate driver circuit are to reduce the volume. To eliminate the transformer is one ... [more] | EE2021-49 pp.100-105 |
| MW | 2021-11-18 15:25 |
Kagoshima | Kagoshima University (Primary: On-site, Secondary: Online) |
Development of 1mW Class Rectenna for 920-MHz Band Wireless Power Transfer System Katsumi Kawai, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.) MW2021-71 |
The time and effort required to replace and recharge the batteries of wearable devices has become a problem in medical a... [more] | MW2021-71 pp.24-28 |
| CAS, ICTSSL | 2021-01-29 13:40 |
Online | Online | Reducing chip area and improving efficiency of a charge pump by switching the input voltage source and controlling the number of stages Shunsuke Hironaga, Takahide Sato, Satomi Ogawa (Yamanashi Univ) CAS2020-64 ICTSSL2020-49 |
A step-up/step-down power supply circuit with a wide input/output voltage range, which has only one switch in its curren... [more] | CAS2020-64 ICTSSL2020-49 pp.130-135 |
| ICD, SDM, ITE-IST [detail] | 2020-08-06 13:00 |
Online | Online | A control circuit design of power converter with time-division input impedance modulation for energy transducer with high output impedance Kazuma Koketsu, Toru Tanzawa (Shizuoka Univ.) SDM2020-3 ICD2020-3 |
This paper proposes a practical control circuit design of power converter for energy transducer with high output impedan... [more] | SDM2020-3 ICD2020-3 pp.9-13 |
| ICD, SDM, ITE-IST [detail] | 2020-08-06 13:25 |
Online | Online | A charge pump circuit for very low voltage applications Keiichi Nagaoka, Cong-Kha Pham (UEC) SDM2020-4 ICD2020-4 |
In recent years, energy harvesting, which harvests electric power from energy existing in the environment, has attracted... [more] | SDM2020-4 ICD2020-4 pp.15-18 |
| WPT | 2020-06-11 14:20 |
Online | Online | Study on an Asymmetric Rectifier for Inductor-less Load Impedance Conversion in Wireless Power Transfer Systems Yoshiaki Narusue, Jaewon Shin, Hiroyuki Morikawa (The Univ. of Tokyo) WPT2020-14 |
In this paper, we study an asymmetric rectifier circuit for realizing a load impedance conversion mechanism without an i... [more] | WPT2020-14 pp.17-20 |
| ED, SDM | 2018-02-28 17:05 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115 |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] | ED2017-115 SDM2017-115 pp.51-56 |
| ICD, CPSY, CAS | 2017-12-14 15:10 |
Okinawa | Art Hotel Ishigakijima | A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88 |
Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore powe... [more] | CAS2017-91 ICD2017-79 CPSY2017-88 p.127 |
| WPT | 2017-03-07 13:25 |
Kyoto | Kyoto Univ. Uji Campus | WPT2016-79 |
To reduce the weight of a satellite, an internal wireless system for satellites was proposed in a previous study. It is ... [more] | WPT2016-79 pp.75-79 |
| ED, SDM | 2017-02-24 10:25 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices Tokinobu Watanabe (Shizuoka Univ./Univ. Toyama), Hori Masahiro, Ono Yukinori (Shizuoka Univ.) ED2016-131 SDM2016-148 |
Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-... [more] | ED2016-131 SDM2016-148 pp.7-12 |
| SDM | 2017-01-30 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138 |
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] | SDM2016-138 pp.33-36 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-30 13:45 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Fully Integrated, 100-mV Minimum Input Voltage Converter with Gate-Boosted Charge Pump for Energy Harvesting Hiroshi Fuketa, Shin-ichi O'uchi, Takashi Matsukawa (AIST) CPM2016-87 ICD2016-48 IE2016-82 |
A fully integrated step-up DC-DC converter for energy harvesting applications is presented. A minimum startup voltage of... [more] | CPM2016-87 ICD2016-48 IE2016-82 pp.57-62 |
| SDM | 2016-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] | SDM2016-80 pp.9-14 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| ICD, SDM, ITE-IST [detail] | 2016-08-01 10:25 |
Osaka | Central Electric Club | A Low-Power Mixed-Domain Delta-Sigma Time-to-Digital Converter Using Charge-Pump and SAR ADC Anugerah Firdauzi, Zule Xu, Masaya Miyahara, Akira Matsuzawa (Tokyo Tech.) SDM2016-50 ICD2016-18 |
This paper presents a time-to-digital converter (TDC) using delta-sigma architecture which utilizes a charge pump as the... [more] | SDM2016-50 ICD2016-18 pp.9-14 |
| ED, SDM | 2016-03-03 16:20 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132 |
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] | ED2015-125 SDM2015-132 pp.23-26 |
| SDM, ED | 2015-02-05 14:40 |
Hokkaido | Hokkaido Univ. | Accuracy of Time Domain Charge Pumping Tokinobu Watanabe, Masahiro Hori (Univ. of Toyama), Toshiaki Tsuchiya (Shimane Univ.), Yukinori Ono (Univ. of Toyama) ED2014-140 SDM2014-149 |
The charge pumping (CP) is method that is used for analyzing interface defects. The CP method evaluates interface defect... [more] | ED2014-140 SDM2014-149 pp.13-16 |
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