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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
13:05
Shizuoka   AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] ED2023-14 CPM2023-56 LQE2023-54
pp.1-5
MW, WPT 2022-04-15
15:15
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Distortion characteristics comparison of AlGaN-GaN HEMTs between SiC and GaN Substrates
Atsushi Moriwaki, Shinji Hara (NU) WPT2022-10 MW2022-10
In this report, we propose a new intermodulation distortion (IMD) measurement method to evaluate the influence of curren... [more] WPT2022-10 MW2022-10
pp.35-39
CPM, LQE, ED 2016-12-12
15:20
Kyoto Kyoto University Evaluating Current Collapse of GaN HEMT devices by Carrier Number
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] ED2016-62 CPM2016-95 LQE2016-78
pp.27-30
CPM, LQE, ED 2016-12-12
16:10
Kyoto Kyoto University AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] ED2016-64 CPM2016-97 LQE2016-80
pp.35-39
CPM, LQE, ED 2016-12-12
16:35
Kyoto Kyoto University Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate
Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) ED2016-65 CPM2016-98 LQE2016-81
We have fabricated a novel AlGaN/GaN HEMT with a multi-grooved and fin-shaped gate field-plate (G-FP), and studied its e... [more] ED2016-65 CPM2016-98 LQE2016-81
pp.41-44
LQE, ED, CPM 2014-11-28
13:15
Osaka   Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] ED2014-90 CPM2014-147 LQE2014-118
pp.81-84
MW, ED 2013-01-18
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs
Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) ED2012-123 MW2012-153
Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs... [more] ED2012-123 MW2012-153
pp.57-62
MW, ED 2013-01-18
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154
Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] ED2012-124 MW2012-154
pp.63-68
ED, LQE, CPM 2012-11-29
14:20
Osaka Osaka City University Evaluation of transient current of GaN HEMTs on Si under light
Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100
We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] ED2012-72 CPM2012-129 LQE2012-100
pp.29-32
LQE, ED, CPM 2011-11-17
15:15
Kyoto Katsura Hall,Kyoto Univ. Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] ED2011-82 CPM2011-131 LQE2011-105
pp.43-48
CPM, SDM, ED 2011-05-20
16:40
Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
MW, ED 2011-01-14
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] ED2010-182 MW2010-142
pp.41-44
MW, ED 2011-01-14
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] ED2010-183 MW2010-143
pp.45-50
CPM, LQE, ED 2010-11-12
10:50
Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112
We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
ED, LQE, CPM 2009-11-20
11:20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] ED2009-151 CPM2009-125 LQE2009-130
pp.109-114
SDM, ED 2008-07-09
11:40
Hokkaido Kaderu2・7 [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] ED2008-41 SDM2008-60
pp.9-14
SDM, ED 2008-07-11
14:50
Hokkaido Kaderu2・7 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] ED2008-105 SDM2008-124
pp.341-345
ED, MW 2008-01-16
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] ED2007-208 MW2007-139
pp.11-15
CPM, ED, LQE 2007-10-12
10:50
Fukui Fukui Univ. Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70
Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] ED2007-169 CPM2007-95 LQE2007-70
pp.67-72
ED, MW 2006-01-19
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.)
Two-dimensional transient analyses of GaN MESFETs are performed in which a deep donor and a deep acceptor in a semi-insu... [more] ED2005-199 MW2005-153
pp.1-6
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