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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| AP | 2023-10-19 10:00 |
Iwate | Iwate University (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Reflective lens design using perforated dielectrics Riku Kudo, Hiroyasu Sato, Qiang Chen (Tohoku Univ.)  AP2023-98 |
A high-gain Fresnel lens with phase correction by changing the effective dielectric constant using a perforated dielectr... [more] | AP2023-98 pp.45-47 |
| MW | 2022-05-20 13:00 |
Kyoto | Kyoto Univ. (Primary: On-site, Secondary: Online) |
Formulation of kQ theory for underwater capacitive wireless power transfer Yasumasa Naka, Masaya Tamura (Toyohashi Univ.) MW2022-20 |
kQ theory is a significant guideline to design a high-efficient capacitive coupler for wireless power transfer. However,... [more] | MW2022-20 pp.28-31 |
| SDM | 2020-11-19 14:10 |
Online | Online | [Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics Yusuke Noda (Kanazawa Gakuin Univ.) SDM2020-25 |
The aim of this study is to clarify the relationship between the dielectric constants and other physical and chemical pr... [more] | SDM2020-25 pp.15-20 |
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:00 |
Miyagi | [Invited Talk]
Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sens... [more] | R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 pp.29-34 |
|
| SCE | 2015-10-09 10:20 |
Miyagi | Tohoku Univ. | The GHz Resonant Circuits with Dielectrics as Bolometer/Calorimeter Takahiro Nakayama, Takahiro Kikuchi, Masatoshi Hoshino, Noriko Yamasaki, Kazuhisa Mitsuda (JAXA) SCE2015-31 |
To reveal the high energy phenomenon of the universe, it is important to improve energy resolution and angular resolutio... [more] | SCE2015-31 pp.61-65 |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM | 2012-06-21 11:55 |
Aichi | VBL, Nagoya Univ. | Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] | SDM2012-51 pp.43-46 |
| OME | 2012-05-24 15:15 |
Tokyo | NTT Musashino Research and Development Center | [Invited Talk]
Fabrication technique of electrodes and wires for printed electronic devices
-- Subjects for realizing printed RFID tags -- Manabu Yoshida (AIST) OME2012-26 |
Printed RFID tag is representative product utilizing flexible electronics. Printed RFID tag is composed of high-frequenc... [more] | OME2012-26 pp.35-40 |
| SDM | 2011-07-04 15:40 |
Aichi | VBL, Nagoya Univ. | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65 |
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] | SDM2011-65 pp.87-92 |
| SDM | 2010-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] | SDM2010-175 pp.23-28 |
| MW | 2010-09-10 13:00 |
Tokyo | Tokyo Inst. of Tech. | A Study of the FDTD Method for Analysing Waves Propagating a Space where Dielectric Boundaries are Moving Daisuke Oka, Mayumi Matsunaga (Ehime Univ.), Toshiaki Matsunaga (Fukuoka Inst. Tech.) MW2010-82 |
A study for a proposition of a FDTD method which can analyze electromagnetic waves propagating a space where dielectric... [more] |
MW2010-82 pp.85-88 |
| OPE, EMT, MW | 2009-07-30 14:30 |
Hokkaido | Asahikawa Civic Culture Hall | Numerical Solution of Two-dimensional Waveguides by FETD Method Kengo Taira (Ryukyu univ.), Seiji Fujino (Kyusyu Univ.) MW2009-53 OPE2009-53 |
Numerical analyses of Electromagnetic wave propagation in wave guides are carried out by FETD method. This method uses G... [more] | MW2009-53 OPE2009-53 pp.127-132 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2008-06-10 09:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] | SDM2008-49 pp.41-46 |
| SDM, R, ED | 2007-11-16 16:10 |
Osaka | A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) R2007-53 ED2007-186 SDM2007-221 |
A new physical model of Time-Dependent Dielectric Breakdown (TDDB) in Cu interconnect dielectrics is proposed. TDDB occu... [more] | R2007-53 ED2007-186 SDM2007-221 pp.39-44 |
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| SDM | 2006-06-22 11:20 |
Hiroshima | Faculty Club, Hiroshima Univ. | Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON Yuichiro Mitani, Hideki Satake (Toshiba Corp.) |
NBTI(Negative Bias Temperature Instability) has become increasingly serious in the context of effort to develop highly r... [more] | SDM2006-57 pp.87-92 |
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