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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2023-04-22
15:00
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Metal induced lateral crystallization of amorphous Ge on insulating substrate
Isao Tsunoda, Kenichiro Takakura (NIT, Kumamoto College) SDM2023-15 OME2023-15
We have investigated the low-temperature metal induced lateral crystallization of amorphous Ge on insulating substrate. ... [more] SDM2023-15 OME2023-15
pp.55-58
CPM 2018-08-10
11:05
Aomori Hirosaki Univ. Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam
Keisuke Fujimori, Yosuke Chida, Yusuke Masuda, Natsuki Ujiie, Yoshiharu Enta (Hirosaki Univ.) CPM2018-18
Irradiation effects of electron beam on 20-100-nm-thick SiO_{2} layer on Si(100) have been investigated by scanning elec... [more] CPM2018-18
pp.47-52
ED 2016-10-25
14:40
Mie   Study on the photoresponse of silicon field emitter arrays (II)
Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2016-46
We have fabricated silicon field emitter arrays with submicron gate opening by using etch-back technique and investigate... [more] ED2016-46
pp.13-15
SDM, OME 2016-04-08
16:00
Okinawa Okinawa Prefectural Museum & Art Museum Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) SDM2016-8 OME2016-8
We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time ann... [more] SDM2016-8 OME2016-8
pp.31-34
OFT, PEM
(Joint)
2015-05-21
14:25
Ishikawa   Reflowable thermoplastic optical lens module for 10Gbps transmission with 850nm VCSEL
Takayuki Shimazu, Michiko Harumoto, Tomomi Sano (SEI), Takuro Watanabe (NTD), Shohei Okabe, Koji Katayama (SFP), Satoshi Yamazaki, Shinya Nishikawa (SEI) OFT2015-4
The thermoplastic optical lens that made by conventional injection molding method is productivity and cost effective but... [more] OFT2015-4
pp.17-20
ED 2014-10-22
09:25
Hokkaido Hokkaido Univ. (Faculty House Trillium) Effect of Laser irradiation on Electron Emission from Silicon Field Emitter Arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2014-69
The field emission properties of silicon field emitter arrays with submicron gate aperture have been investigated under ... [more] ED2014-69
pp.35-38
ED 2013-10-23
09:00
Hokkaido Enreisou, Hokkaido Univ. Photoassisted Electron Emission from Silicon Cathodes
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.), Tomoya Yoshida, Masayoshi Nagao (AIST) ED2013-57
The photoresponse of electron emission from nanocrystalline silicon based Metal-oxide-semiconductor (MOS) cathodes and g... [more] ED2013-57
pp.29-32
ED 2012-11-20
09:55
Osaka Osaka Univ. Nakanoshima Center Effect of light illumination on electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki (HIT), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2012-61
We investigate the effect of laser illumination on electron emission from nc-Si based Metal-oxide-semiconductor (MOS) ca... [more] ED2012-61
pp.37-40
ED 2011-10-21
09:00
Aomori   Photoassisted electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki, Yuto Yamazaki (Hachinohe Inst. Technol.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-66
Effect of laser illumination on electron emission from nc-Si MOS cathodes using heavy doped p-type Si substrates has bee... [more] ED2011-66
pp.33-36
SDM 2010-12-17
15:10
Kyoto Kyoto Univ. (Katsura) Irradiation Effects of Silicon Surface by Polyatomic Ion Beams
Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2010-197
C$_{3}$H$_{7}^{+}$}\ and C$_{6}$H$_{13}^{+}$\ polyatomic ion beams generated from n-octane were irradiated with 1 keV/CH... [more] SDM2010-197
pp.69-72
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