Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2023-02-28 16:00 |
Tokyo |
Tokyo University of Technology (Primary: On-site, Secondary: Online) |
Study of atomic-layer-deposition TiO2 films for strong capacitive coupling of microdevices Fumihiro Takada, Yoshinao Mizugaki, Hiroshi Shimada (UEC) CPM2022-106 |
In order to couple micro- and nano-electronic devices via capacitances strongly, dielectric materials of high relative d... [more] |
CPM2022-106 pp.78-81 |
ED, THz |
2018-12-18 09:00 |
Miyagi |
RIEC, Tohoku Univ. |
[Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] |
ED2018-62 pp.35-38 |
SCE |
2016-04-20 17:00 |
Tokyo |
|
SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) SCE2016-10 |
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] |
SCE2016-10 pp.55-60 |
MRIS, ITE-MMS |
2015-07-10 15:20 |
Tokyo |
Waseda Univ. |
Fabrication of FePt Nanodot Arrays with High Coercivity by Pulse Electrodeposition Daiki Nishiie, Siggi Wodarz, Chen Tar Hsieh, Manabu Saito, Junya Abe (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.) MR2015-13 |
We have been developing the combination process of electrochemical and lithography techniques to fabricate ferromagneti... [more] |
MR2015-13 pp.25-29 |
ED |
2015-04-17 10:55 |
Miyagi |
Laboratory for Nanoelectronics and Spintronics |
SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo/CREST JST) ED2015-13 |
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] |
ED2015-13 pp.65-70 |
MRIS, ITE-MMS |
2014-07-17 13:25 |
Tokyo |
Tokyo Institute of Technology |
Fabrication of ultra-high density nanodot arrays with high coercivity based on analysis of initial deposition process Hiroki Hagiwara, Siggi Wodarz, Tomohiro Otani, Daiki Nishiie (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.) MR2014-9 |
We have attempted to fabricate ferromagnetic nanodot arrays for bit patterned media (BPM) by using electrochemical proce... [more] |
MR2014-9 pp.7-10 |
ED, SDM |
2014-02-28 12:05 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] |
ED2013-149 SDM2013-164 pp.95-100 |
MRIS, ITE-MMS |
2013-11-15 13:25 |
Tokyo |
Waseda Univ. |
Characterization and analysis of deposition behavior of ultra-high density ferromagnetic nanodot arrays fabricated by electrochemical processes Siggi Wodarz, Yuta Maniwa, Hiroki Hagiwara, Tomohiro Otani, Daiki Nishiie (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.) MR2013-20 |
We fabricated hcp-Co80Pt20 and L10-FePt thin films and nanodot arrays onto hcp-Ru (002) / Si substrate by electrodeposit... [more] |
MR2013-20 pp.7-10 |
MRIS, ITE-MMS |
2013-07-12 14:15 |
Tokyo |
Chuo Univ. |
Characterization and analysis of deposition process of ultra-high density magnetic nanodot arrays fabricated by electrochemical processes Siggi Wodarz, Yuta Maniwa, Hiroki Hagiwara, Takayuki Homma (Waseda Univ.) MR2013-8 |
We have been fabricating ferromagnetic nanodot arrays for bit patterned media (BPM) by using lithography techniques and ... [more] |
MR2013-8 pp.13-17 |
IT, ISEC, WBS |
2013-03-08 11:45 |
Osaka |
Kwansei Gakuin Univ., Osaka-Umeda Campus |
Nano Artifact-metrics based on Resist Collapsing Tsutomu Matsumoto, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi (Yokohama National Univ.), Morihisa Hoga, Yasuyuki Ohyagi (DNP), Makoto Naruse (NICT), Naoya Tate, Motoichi Ohtsu (Univ. of Tokyo) IT2012-96 ISEC2012-114 WBS2012-82 |
Artifact-metrics is an automated method of utilizing physical artifacts based on their measurable intrinsic characterist... [more] |
IT2012-96 ISEC2012-114 WBS2012-82 pp.217-222 |
ED, SDM |
2012-02-08 09:55 |
Hokkaido |
|
Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168 |
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] |
ED2011-151 SDM2011-168 pp.53-58 |
ED, SDM |
2010-02-22 15:40 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] |
ED2009-202 SDM2009-199 pp.35-39 |
OPE, EMT, LQE, PN, IEE-EMT |
2010-01-29 14:25 |
Kyoto |
|
Aluminum surface plasmon color filter Naoki Ikeda, Daiju Tsuya, Yoshimasa Sugimoto, Yasuo Koide (National Inst. for Materials Science), Atsushi Miura, Daisuke Inoue, Tsuyoshi Nomura, Hisayoshi Fujikawa, Kazuo Sato (Toyota CRDL) PN2009-59 OPE2009-197 LQE2009-179 |
In order to realize surface plasmon color filter we fabricated precise hole array which lattice constant of 300~400nm us... [more] |
PN2009-59 OPE2009-197 LQE2009-179 pp.129-132 |
EMCJ |
2010-01-22 09:05 |
Okinawa |
University of the Ryukyus |
Low-Noise System Design for Electrostatic Deflection of Electron-beam Wen Li, Masami Makuuchi, Kengo Imagawa (PERL,HITACHI), Hiroyuki Takahashi, Yuusuke Ominami, Yasuhiro Gunji (Hitachi High-Technologies) EMCJ2009-111 |
High resolution beam control technology has been required from ion or electron beam lithography, inspection apparatus, m... [more] |
EMCJ2009-111 pp.75-80 |
ITE-MMS, MRIS |
2009-11-13 13:45 |
Tokyo |
Waseda Univ. |
Effect of magnetic dot shape in BPM on magnetic and R/W performance with 1 Tbit/in2 regime Jun Ariake, Yuji Kondo (Akita Research and Development Center), Shunji Ishio (Akita Univ.), Naoki Honda (Tohoku Inst. of Tech.) MR2009-30 |
Fine magnetic dot arrays with an areal density around 1 Tbit/in2 were fabricated for obtaining fabrication process issue... [more] |
MR2009-30 pp.7-12 |
ED |
2009-10-15 13:55 |
Fukui |
|
Fabrication and measurement of FEA with a built-in electrostatic lens Tomoya Tagami, Akifumi Koike, Yasuo Takagi (Shizuoka Univ.), Masayoshi Nagao, Tomoya Yoshida, Seigo Kanemaru (AIST), Yoichiro Neo, Toru Aoki, Hidenori Mimura (Shizuoka Univ.) ED2009-117 |
We have proposed the new applications by using a fine focusing crossover electron beam from FEA such as electron beam m... [more] |
ED2009-117 pp.7-10 |
SDM, ED |
2009-02-26 15:40 |
Hokkaido |
Hokkaido Univ. |
Feild Emitter Arrays with focusing function and it's applications Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.) ED2008-228 SDM2008-220 |
We have developed field emission array (FEA) with new focusing electrode structure and proposed several devices and appl... [more] |
ED2008-228 SDM2008-220 pp.23-27 |
SDM, ED |
2009-02-27 09:00 |
Hokkaido |
Hokkaido Univ. |
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] |
ED2008-232 SDM2008-224 pp.47-52 |