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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 46  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2022-01-07
14:05
Osaka CENTRAL ELECTRIC CLUB Device characteristics of organic floating-gate memories based on n-channel polymer transistors
Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] OME2021-48
pp.4-8
SDM 2019-11-08
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
pp.27-32
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM 2017-01-30
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] SDM2016-130
pp.1-4
SDM 2016-06-29
16:20
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET
Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45
In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] SDM2016-45
pp.69-74
SDM 2016-01-28
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Van der Waals Junctions of Layered 2D Materials for Functional Devices
Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123
Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dim... [more] SDM2015-123
pp.13-16
ED 2016-01-20
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] ED2015-114
pp.13-18
OME 2015-10-23
15:50
Osaka Osaka Univ. Nakanoshima Center Fabrication of OFETs using mixed solvent for high mobility and low threshold voltage
Ryosuke Nakamichi, Takashi Nagase, Takashi Kobayashi (Osaka Pref. Univ.), Yuichi Sadamitsu (Nippon Kayaku Co., Ltd.), Hiroyoshi Naito (Osaka Pref. Univ.) OME2015-58
It is important to develop methods of controlling electrical characteristics of organic field-effect transistor (OFET). ... [more] OME2015-58
pp.43-46
ICD, SDM 2014-08-04
13:05
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] SDM2014-67 ICD2014-36
pp.29-34
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-25
11:06
Niigata Niigata University Study of temperature dependence on field effect mobility of organic thin-film transistors
Tatsuya Matsumoto, Seung-Kyum Kim, Reiji Hattori (Kyushu Univ.) EID2013-29
In order to clarify the carrier-injection system on organic thin-film transistors (OTFTs), we compared the temperature d... [more] EID2013-29
pp.117-120
ED, MW 2014-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] ED2013-116 MW2013-181
pp.35-39
ED, MW 2014-01-17
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
pp.79-84
OME 2013-10-11
10:40
Osaka Osaka Univ. Nakanoshima Center Fabrication of Active Antenna for RFID Tag using Organic Oransistors
Sho Hasegawa, Shunsuke Isoda, Takahiro Hashizume, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masaaki Iizuka (Chiba Univ.) OME2013-53
In this research, we propose active antenna combined with Step-edge Vertical Channel Organic Field-Effect Transistor (SV... [more] OME2013-53
pp.11-16
OME 2013-03-08
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. B1-2 Design of New Organic Semiconducting Molecules and Their Application to Organic Field-effect Transistors
Koji Nakano (Tokyo Univ. of Agriculture and Tech./JST), Natsuko Chayama, Minh anh Truong, Shunsuke Kodama, Kyoko Nozaki (Univ. of Tokyo) OME2012-108
Furan-fused heteroacenes, dibenzo[d,d']benzo[1,2-b:4,5-b']difurans (DBBDFs) were designed as a new family of organic sem... [more] OME2012-108
pp.13-16
OME, OPE 2012-11-16
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of flexible OFET characteristics by using EFI-SHG -- the effect of bending --
Yohei Abe, Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) OME2012-57 OPE2012-129
We studied the effect of bending on flexible organic field-effect transistors (active layer: TIPS pentacene, gate-insula... [more] OME2012-57 OPE2012-129
pp.13-18
SDM, ED
(Workshop)
2012-06-27
11:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
Kyung Rok Kim, Min Woo Ryu, Sunhae Shin, Hee Cheol Hwang, Kibog Park (UNIST)
We report the first implementation of a modeling and simulation environment for the plasmonic terahertz (THz) detector b... [more]
SDM, ED
(Workshop)
2012-06-27
13:15
Okinawa Okinawa Seinen-kaikan Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.)
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more]
SDM, ED
(Workshop)
2012-06-28
10:40
Okinawa Okinawa Seinen-kaikan [Poster Presentation] Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances.
Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.)
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more]
MBE, NC
(Joint)
2012-03-15
10:40
Tokyo Tamagawa University Demonstration of the STDP function in a ferroelectric-gate field-effect transistor-based synaptic device
Yu Nishitani, Yukihiro Kaneko, Michihito Ueda (Panasonic), Takashi Morie (Kyushu Inst. of Tech.), Eiji Fujii (Panasonic) NC2011-156
 [more] NC2011-156
pp.203-207
ED, SDM 2012-02-07
14:35
Hokkaido   KFM observation of individual dopant potentials and electron charging
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] ED2011-144 SDM2011-161
pp.13-18
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