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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 50  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
17:10
Shizuoka   Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system
Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] ED2023-23 CPM2023-65 LQE2023-63
pp.44-47
EID, SDM, ITE-IDY [detail] 2020-12-02
16:30
Online Online Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] EID2020-14 SDM2020-48
pp.54-57
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2018-01-25
13:30
Shizuoka Shizuoka Univ., Hamamatsu Thin Film Formation Mechanism of Hexagonal Boron Nitride on c-Plane Sapphire Substrates by Low Pressure CVD
Takumi Kawarazaki, Naoki Umehara, Tomoyasu Nakama, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-30
The hexagonal boron nitride (h-BN) thin films were grown on a c-plane sapphire substrate by low pressure chemical vapor ... [more] EID2017-30
pp.1-4
CPM, LQE, ED 2016-12-12
15:45
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
pp.31-34
MRIS, ITE-MMS 2016-12-09
09:50
Ehime Ehime Univ. Discussion on write head performance for perpendicular magnetic recording based on FEM analysis
Yoshihisa Nakamura (Tohoku Univ.), Yasushi Kanai, Ryo Itagaki (Niigata Inst. Tech.) MR2016-37
In order to extend the areal density in magnetic recording the most challenging obstacle is believed to be the writabili... [more] MR2016-37
pp.45-50
MRIS, ITE-MMS 2016-07-08
13:50
Tokyo Chuo Univ. Preparation of Bi-layer Epitaxial Magnetic Films Consisting of L10 Ordered Alloy and Co Thin Films on MgO Substates
Ryoma Ochiai, Masahiro Nakamura (Chuo Univ.), Mitsuru Ohtake (Kogakuin Univ./Chuo Univ.), Masaaki Futamoto (Chuo Univ.), Fumiyoshi Kirino (Tokyo Univ. Arts), Nobuyuki Inaba (Yamagata Univ.) MR2016-15
Multilayer films consisting of hard and soft magnetic materials have been studied to investigate the possibilities for a... [more] MR2016-15
pp.13-18
SDM 2015-10-30
10:50
Miyagi Niche, Tohoku Univ. Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] SDM2015-78
pp.41-44
MRIS, ITE-MMS 2015-07-10
16:10
Tokyo Waseda Univ. Addition of perpendicular magnetic anisotropy to full-Heulser Co2FeSi and Co2MnSi alloy thin films
Yota Takamura, Naoki Matsushita, Kouki Shinohara, Takahiro Suzuki, Yorinobu Fujino (Tokyo Tech), Yoshiaki Sonobe (Samsung), Shigeki Nakagawa (Tokyo Tech) MR2015-14
We developed additional technique of perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co$_2$FeSi (C... [more] MR2015-14
pp.31-35
MRIS, ITE-MMS 2014-11-25
15:45
Tokyo Waseda Univ. Study on PZT thin films for ultra-high density ferroelectric data storage based on scanning nonlinear dielectric microscopy
Yitong Chen, Yoshiomi Hiranaga, Yasuo Cho (Tohoku Univ) MR2014-26
In order to realize high density and high speed ferroelectric recording, we made and measured a series of thin film with... [more] MR2014-26
pp.17-22
CPM 2014-10-25
09:40
Nagano   Characterization of low-temperature deposited SiNx films applicable to 3D/2.5D-IC
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (FUJITSU LAB.LTD.), Atsushi Noya (Kitami Inst. of Tech.) CPM2014-115
3-dimensional stacked LSI and/or 2.5-D IC is attracted much attention to solve the issues how to develop the integration... [more] CPM2014-115
pp.53-56
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-25
10:12
Niigata Niigata University Luminescent and Electrical Properties of CuAlS2:Mn Conductive Phosphor Thin Films
Yuki Oshima, Hideki Kawaguchi, Koutoku Ohmi (Tottori Univ.) EID2013-24
CuAlS2:Mn phosphor thin films have been prepared by electron-beam (EB) evaporation method . The films are well crystalli... [more] EID2013-24
pp.97-100
MRIS, ITE-MMS 2013-11-15
15:45
Tokyo Waseda Univ. Large perpendicular magnetic anisotropy in epitaxial Cobalt Ferrites thinfilms -- New candidate for recording media --
Eiji Kita, Hideto Yanagihara (Univ. of Tsukuba), Tomohiko Niizeki (Tohoku Univ.), Kazuya Z. Suzuki (Univ. of Tsukuba) MR2013-22
Modern applications of the magnetic materials in high-density recording media and spintronic devices, for example, requi... [more] MR2013-22
pp.23-28
CPM 2013-10-24
16:55
Niigata Niigata Univ. Satellite Campus TOKIMEITO Properties of SiNx films prepared by low process temperature
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (FUJITSU LAB.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-100
3-dimensional stacked LSI is attracted much attention to solve the issues how to develop the integration density and/or ... [more] CPM2013-100
pp.35-39
CPM 2013-10-25
11:50
Niigata Niigata Univ. Satellite Campus TOKIMEITO Preparation of carbon thin films by gas flow sputtering in high-density plasma
Takuma Ishii, Yuji Satou, Takaharu Watanabe, Kiyoshi Ishii, Hiroshi Sakuma (Utsunomiya Univ.) CPM2013-107
High-quality diamond thin films are successfully obtained by plasma-assisted CVD. On the other hand, carbon films with a... [more] CPM2013-107
pp.67-71
MRIS, ITE-MMS 2013-07-12
13:00
Tokyo Chuo Univ. [Invited Talk] Effect of Microwave Fields on Reduction of Coercive Field in Perpendicular Medium
Yukio Nozaki, Naoko Ishida (Keio Univ.), Yoshikazu Soeno (TDK), Koji Sekiguchi (Keio Univ.) MR2013-6
Recently, microwave-assisted magnetic recording (MAMR) has been widely investigated to realize an areal density of HDDs ... [more] MR2013-6
pp.1-6
EMD, R 2013-02-15
13:35
Mie Sumitomo Wiring System, Ltd Visualization of electric current in contact and effect of thin film on contact resistance
Shigeru Sawada, Shigeki Tsukiji (Mie Univ.), Shigeki Shimada (Sumitomo Electric Industries), Terutaka Tamai (Elcontech), Yasuhiro Hattori (ANTech) R2012-72 EMD2012-103
The mathematical solutions and electrical field analysis results of current density distribution in electric contact hav... [more] R2012-72 EMD2012-103
pp.1-6
SDM 2012-12-07
13:30
Kyoto Kyoto Univ. (Katsura) Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125
Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-S... [more] SDM2012-125
pp.59-64
OME 2012-11-19
13:00
Osaka Room 302, Nakanoshima Ctr., Osaka Univ. Ferroelectric properties by in-plane polarization switching of perpendicularly oriented vinylidene fluoride thin films
Takaaki Inoue, Yasuko Koshiba, Masahiro Misaki, Kenji Ishida, Yasukiyo Ueda (Kobe Univ.) OME2012-66
In-plane polarization switching of vinylidene fluoride (VDF) oligomer [CF3(CH2CF2)nI](n=12) were observed for the first ... [more] OME2012-66
pp.21-25
CPM 2012-09-25
14:20
Tokyo   Improvement of diffraction efficiency of volumetric magnetic holograms with magnetic garnet films
Naoto Sagara, Yukihiro Masaki, Pang Boey Lim, Hiroyuki Takagi, Yuichi Nakamura, Mitsuteru Inoue (TUT) CPM2012-88
The hologram memory is expected as one of the high recording density technology. We have studied magnetic garnet films a... [more] CPM2012-88
pp.15-18
CPM 2012-08-09
09:50
Yamagata   Low temperature deposition of SiNx thin films by radical-assisted reaction
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. Technol.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (Fujitsu Lab. Ltd.), Atsushi Noya (Kitami Inst. Technol.) CPM2012-45
3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or funct... [more] CPM2012-45
pp.51-54
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