| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EMCJ, IEE-EMC, MW, EST [detail] | 2016-10-20 11:20 |
Miyagi | Tohoku Univ. | An RF Frontend Amplifier Module for High SHF Wide-band Massive MIMO in 5G Keigo Nakatani, Shintaro Shinjo, Yuji Komatsuzaki, Jun Kamioka, Ryota Komaru, Hideyuki Nakamizo, Miyawaki Katsumi, Koji Yamanaka (Mitsubishi Electric)  EMCJ2016-64 MW2016-96 EST2016-60 |
A highly integrated RF frontend module including a three-stage power amplifier (PA), a two-stage low noise amplifier (LN... [more] | EMCJ2016-64 MW2016-96 EST2016-60 pp.25-30 |
| SAT, SANE (Joint) |
2016-02-16 15:00 |
Hiroshima | Hiroshima Institute of Technology | Evaluation of Nonlinear Phase Distortion in X-band GaAs and GaN Power Amplifiers for Small Satellite Communication and its Effect to Multi-level Modulation Masafmi Morimoto, Tomoya Fukami, Hiromi Watanabe (UTokyo), Hirobumi Saito (JAXA) SANE2015-110 |
In this paper, in order to understand AM-PM characteristics, we simulated AM-PM using equivalent circuit of FET. In addi... [more] | SANE2015-110 pp.19-24 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| OPE, LQE | 2014-12-19 12:05 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | [Encouragement Talk]
InGaAs photodetectors based on photonic crystal waveguide including ultrasmall buried heterostructure Kengo Nozaki, Shinji Matsuo, Takuro Fujii, Koji Takeda, Eiichi Kuramochi, Masaya Notomi (NTT) OPE2014-145 LQE2014-132 |
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstra... [more] | OPE2014-145 LQE2014-132 pp.31-35 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| CAS | 2011-01-25 13:45 |
Kumamoto | Kumamoto University | Device Modeling for Millimeter-wave Power Amplifiers Willy Hioe, Hideyuki Nagaishi, Kenji Kogo, Masami Onishi, Takashi Ogawa (Hitachi) CAS2010-87 |
Modeling of devices that have significant physical sizes compared to the wavelength of the application frequency, such a... [more] | CAS2010-87 pp.17-21 |
| SANE | 2007-04-16 13:25 |
Overseas | ARRC(Perth) | A C-Band 500W Solid-State Power Amplifier using 90W GaAs FETs Kazuhiro Kanto, Akihiro Satomi, Yasuaki Asahi, Shinji Takatsuka, Hideki Kimura, Hiroshi Kajio (Toshiba) SANE2007-16 |
More than 500W of peak output power (pulse width 400μs, duty 20%) and over 27dB of power gain are achieved with newly de... [more] | SANE2007-16 pp.85-90 |
| MW, ED | 2007-01-19 09:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric) |
This paper describes circuit design and measurement results of a newly developed InGaP/GaAs HBT MMIC power amplifier mod... [more] | ED2006-226 MW2006-179 pp.143-148 |
| MW, ED | 2007-01-19 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The f... [more] | ED2006-228 MW2006-181 pp.155-160 |
| MW | 2005-12-16 14:00 |
Hiroshima | A Tri-band GaAs FET Power Amplifier Using Lumped Elements Koji Uchida, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo) |
Tri-band GaAs FET power amplifiers with a single transistor using lumped element matching circuits are designed and fabr... [more] | MW2005-137 pp.55-60 |
|
[Return to Top Page]