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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-03-01 09:00 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
An Anti-parallel Diode 100GHz GaN Frequency Tripler for Beyond 5G Using Terahertz Band Shimpei Yamashita, Yoshifumi Kawamura, Keigo Nakatani, Yoshitaka Kamo, Koji Yamanaka (MELCO)  MW2023-186 |
In this report, we present an anti-parallel diode frequency tripler GaN MMIC for the 100GHz band, which utilizes the ter... [more] | MW2023-186 pp.62-65 |
| OME, IEE-DEI | 2023-01-18 13:40 |
Aichi | Aichi Himaka island ホテル浦島 | [Invited Lecture]
Interface potential distribution in GaN-HEMT using Laser Terahertz Emission Microscope Noriyuki Takada (AIST) OME2022-63 |
Laser Terahertz Emission Microscopy (LTEM) can observe electric field/charge transfer by detecting THz waves emitted due... [more] | OME2022-63 pp.1-3 |
| ED, THz | 2021-12-20 17:15 |
Miyagi | (Primary: On-site, Secondary: Online) |
Observation of surface electron trapping of GaN-HEMT during operation Hirokazu Fukidome (Tohoku Univ.) ED2021-58 |
(To be available after the conference date) [more] | ED2021-58 pp.48-52 |
| ED, MW | 2020-01-31 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] | ED2019-105 MW2019-139 pp.59-64 |
| MW, ED | 2019-01-18 10:40 |
Tokyo | Hitachi, Central Research Lab. | The failure mode analysis on GaN-HEMT under High temperature operation Yasuyo Yotsuda (SEDI), Yasunori Tateno, Takumi Yonemura, Masato Furukawa, Hiroshi Yamamoto (SEI), Yukinori Nose, Satoshi Shimizu (SEDI) ED2018-81 MW2018-148 |
(To be available after the conference date) [more] | ED2018-81 MW2018-148 pp.67-70 |
| MW, ED | 2019-01-18 11:05 |
Tokyo | Hitachi, Central Research Lab. | Investigation of the Pulsed-IV Degradation Mechanism of GaN-HEMT under High Temperature Storage Tests Yasunori Tateno (Sumitomo Electric), Yasuyo Kurachi (Sumitomo Electric Device Innovations), Hiroshi Yamamoto, Takashi Nakabayashi (Sumitomo Electric) ED2018-82 MW2018-149 |
The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature stora... [more] | ED2018-82 MW2018-149 pp.71-74 |
| SAT, SANE (Joint) |
2016-02-16 14:35 |
Hiroshima | Hiroshima Institute of Technology | High Power transmitter for X band SAR system on Small satellite Hiromi Watanabe (UT), Hirobumi Saito (JAXA) SANE2015-109 |
We are now developing subsystems in order to put our X-band Synthetic Aperture Radar system for 100kg class small satell... [more] | SANE2015-109 pp.13-18 |
| MW, ICD | 2015-03-05 10:45 |
Fukui | University of Fukui | [Invited Talk]
An S-Band GaN High Efficiency Power Amplifier with Harmonic Processing Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2014-204 ICD2014-117 |
In this report, a 2.45GHz high efficiency power amplifier, fabricated for the Student Design Competition in Asia-Pacific... [more] | MW2014-204 ICD2014-117 pp.13-17 |
| LQE, ED, CPM | 2014-11-28 13:15 |
Osaka | Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 |
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] | ED2014-90 CPM2014-147 LQE2014-118 pp.81-84 |
|
| ED, MW | 2014-01-16 12:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 |
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] | ED2013-117 MW2013-182 pp.41-45 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| SANE | 2012-10-11 14:40 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Developments of high-efficiency GaN RF amplifier and pre-distortion technique for nano/small satellite downlink system Hiromi Watanabe, Tomoya Fukami (Univ. of Tokyo), Atsushi Tomiki, Hirobumi Saito, Naohiko Iwakiri (JAXA) SANE2012-83 |
A high-speed downlink communication system is required to meet different applications for nano/small satellites. Therefo... [more] | SANE2012-83 pp.153-158 |
| SANE | 2012-06-29 16:10 |
Ibaraki | Tsukuba Space Center, JAXA | Measurement and digital predistortion on high-efficiency GaN based power amplifier for nano/small satellite high-speed communication system Hiromi Watanabe (Tokyo University), Atsushi Tomiki (JAXA), Naohiko Iwakiri, Tomoya Fukami (Tokyo University), Hirobumi Saito (JAXA), Shinichi Nakasuka (Tokyo University) SANE2012-40 |
A high-speed downlink communication system is required to meet different applications for nano/small satellites. Theref... [more] |
SANE2012-40 pp.111-116 |
| ED, LQE, CPM | 2009-11-20 15:00 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-157 CPM2009-131 LQE2009-136 |
We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V... [more] | ED2009-157 CPM2009-131 LQE2009-136 pp.139-144 |
| ED | 2009-06-12 11:25 |
Tokyo | Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] | ED2009-48 pp.63-67 |
|
| MW, ED | 2009-01-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.) ED2008-204 MW2008-169 |
This paper reports the demonstration of the resonant inverter circuit for electrodeless fluorescent lamps using a high-v... [more] | ED2008-204 MW2008-169 pp.35-40 |
| MW, ED | 2009-01-16 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] | ED2008-221 MW2008-186 pp.129-133 |
| SDM, ED | 2008-07-11 14:50 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] | ED2008-105 SDM2008-124 pp.341-345 |
| MW, ED | 2007-01-19 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) |
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] | ED2006-237 MW2006-190 pp.205-208 |
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