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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, IEE-DEI 2023-01-18
13:40
Aichi Aichi Himaka island ホテル浦島 [Invited Lecture] Interface potential distribution in GaN-HEMT using a Laser Terahertz Emission Microscope
Noriyuki Takada (AIST) OME2022-63
Laser Terahertz Emission Microscopy (LTEM) can observe electric field/charge transfer by detecting THz waves emitted due... [more] OME2022-63
pp.1-3
ED, THz 2021-12-20
17:15
Miyagi
(Primary: On-site, Secondary: Online)
Observation of surface electron trapping of GaN-HEMT during operation
Hirokazu Fukidome (Tohoku Univ.) ED2021-58
(To be available after the conference date) [more] ED2021-58
pp.48-52
ED, MW 2020-01-31
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] ED2019-105 MW2019-139
pp.59-64
MW, ED 2019-01-18
10:40
Tokyo Hitachi, Central Research Lab. The failure mode analysis on GaN-HEMT under High temperature operation
Yasuyo Yotsuda (SEDI), Yasunori Tateno, Takumi Yonemura, Masato Furukawa, Hiroshi Yamamoto (SEI), Yukinori Nose, Satoshi Shimizu (SEDI) ED2018-81 MW2018-148
(To be available after the conference date) [more] ED2018-81 MW2018-148
pp.67-70
MW, ED 2019-01-18
11:05
Tokyo Hitachi, Central Research Lab. Investigation of the Pulsed-IV Degradation Mechanism of GaN-HEMT under High Temperature Storage Tests
Yasunori Tateno (Sumitomo Electric), Yasuyo Kurachi (Sumitomo Electric Device Innovations), Hiroshi Yamamoto, Takashi Nakabayashi (Sumitomo Electric) ED2018-82 MW2018-149
The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature stora... [more] ED2018-82 MW2018-149
pp.71-74
SAT, SANE
(Joint)
2016-02-16
14:35
Hiroshima Hiroshima Institute of Technology High Power transmitter for X band SAR system on Small satellite
Hiromi Watanabe (UT), Hirobumi Saito (JAXA) SANE2015-109
We are now developing subsystems in order to put our X-band Synthetic Aperture Radar system for 100kg class small satell... [more] SANE2015-109
pp.13-18
MW, ICD 2015-03-05
10:45
Fukui University of Fukui [Invited Talk] An S-Band GaN High Efficiency Power Amplifier with Harmonic Processing
Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2014-204 ICD2014-117
In this report, a 2.45GHz high efficiency power amplifier, fabricated for the Student Design Competition in Asia-Pacific... [more] MW2014-204 ICD2014-117
pp.13-17
LQE, ED, CPM 2014-11-28
13:15
Osaka   Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] ED2014-90 CPM2014-147 LQE2014-118
pp.81-84
ED, MW 2014-01-16
12:10
Tokyo Kikai-Shinko-Kaikan Bldg. Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs
Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] ED2013-117 MW2013-182
pp.41-45
ED, LQE, CPM 2012-11-29
15:50
Osaka Osaka City University Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films
Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] ED2012-75 CPM2012-132 LQE2012-103
pp.41-44
SANE 2012-10-11
14:40
Overseas The SONGDO CONVENSIA, Incheon Korea Developments of high-efficiency GaN RF amplifier and pre-distortion technique for nano/small satellite downlink system
Hiromi Watanabe, Tomoya Fukami (Univ. of Tokyo), Atsushi Tomiki, Hirobumi Saito, Naohiko Iwakiri (JAXA) SANE2012-83
A high-speed downlink communication system is required to meet different applications for nano/small satellites. Therefo... [more] SANE2012-83
pp.153-158
SANE 2012-06-29
16:10
Ibaraki Tsukuba Space Center, JAXA Measurement and digital predistortion on high-efficiency GaN based power amplifier for nano/small satellite high-speed communication system
Hiromi Watanabe (Tokyo University), Atsushi Tomiki (JAXA), Naohiko Iwakiri, Tomoya Fukami (Tokyo University), Hirobumi Saito (JAXA), Shinichi Nakasuka (Tokyo University) SANE2012-40
A high-speed downlink communication system is required to meet different applications for nano/small satellites.
Theref... [more]
SANE2012-40
pp.111-116
ED, LQE, CPM 2009-11-20
15:00
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate
Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-157 CPM2009-131 LQE2009-136
We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V... [more] ED2009-157 CPM2009-131 LQE2009-136
pp.139-144
ED 2009-06-12
11:25
Tokyo   Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] ED2009-48
pp.63-67
MW, ED 2009-01-14
16:15
Tokyo Kikai-Shinko-Kaikan Bldg Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit
Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.) ED2008-204 MW2008-169
This paper reports the demonstration of the resonant inverter circuit for electrodeless fluorescent lamps using a high-v... [more] ED2008-204 MW2008-169
pp.35-40
MW, ED 2009-01-16
10:55
Tokyo Kikai-Shinko-Kaikan Bldg High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] ED2008-221 MW2008-186
pp.129-133
SDM, ED 2008-07-11
14:50
Hokkaido Kaderu2・7 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] ED2008-105 SDM2008-124
pp.341-345
MW, ED 2007-01-19
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor)
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] ED2006-237 MW2006-190
pp.205-208
 Results 1 - 18 of 18  /   
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