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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, EID |
2017-12-22 15:30 |
Kyoto |
Kyoto University |
Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85 |
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] |
EID2017-24 SDM2017-85 pp.67-70 |
LQE, OPE, OCS |
2016-10-27 16:35 |
Miyazaki |
Miyazaki Citizen's Plaza |
Theoretical investigation of highly efficient connecting structure between Ge-rib and GeSn waveguides and extinction characteristics of GeSn/SiGeSn multiple-quantum-well waveguide for mid-infrared photonics Minami Akie, Takanori Sato, Shuntaro Makino (Hokkaido Univ.), Masakazu Arai (Miyazaki Univ.), Takeshi Fujisawa, Kunimasa Saitoh (Hokkaido Univ.) OCS2016-44 OPE2016-85 LQE2016-60 |
We investigate efficient connecting structure between Ge-rib and GeSn waveguides on Si substrate for mid-infrared (2 μm)... [more] |
OCS2016-44 OPE2016-85 LQE2016-60 pp.55-60 |
OME, SDM |
2015-04-30 10:40 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] |
SDM2015-10 OME2015-10 pp.39-40 |
SDM |
2014-10-17 11:10 |
Miyagi |
Niche, Tohoku Univ. |
Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow ... [more] |
SDM2014-91 pp.41-45 |
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