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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2017-12-22
15:30
Kyoto Kyoto University Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate
Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] EID2017-24 SDM2017-85
pp.67-70
LQE, OPE, OCS 2016-10-27
16:35
Miyazaki Miyazaki Citizen's Plaza Theoretical investigation of highly efficient connecting structure between Ge-rib and GeSn waveguides and extinction characteristics of GeSn/SiGeSn multiple-quantum-well waveguide for mid-infrared photonics
Minami Akie, Takanori Sato, Shuntaro Makino (Hokkaido Univ.), Masakazu Arai (Miyazaki Univ.), Takeshi Fujisawa, Kunimasa Saitoh (Hokkaido Univ.) OCS2016-44 OPE2016-85 LQE2016-60
We investigate efficient connecting structure between Ge-rib and GeSn waveguides on Si substrate for mid-infrared (2 μm)... [more] OCS2016-44 OPE2016-85 LQE2016-60
pp.55-60
OME, SDM 2015-04-30
10:40
Okinawa Oh-hama Nobumoto Memorial Hall Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics
Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] SDM2015-10 OME2015-10
pp.39-40
SDM 2014-10-17
11:10
Miyagi Niche, Tohoku Univ. Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow ... [more]
SDM2014-91
pp.41-45
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