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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 45  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
14:20
Shizuoka   Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] ED2023-17 CPM2023-59 LQE2023-57
pp.15-20
US 2020-11-05
15:45
Aichi   Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect
Takumi Saotome, Takahiko Yanagitani (Waseda Univ.) US2020-49
Mobile communication device requires high power operation. Nonlinear signals such as second harmonic (H2) generation (SH... [more] US2020-49
pp.34-39
CPM 2019-11-07
15:25
Fukui Fukui univ. Nitrogen doping to ZnO films in a catalytic reaction assisted chemical vapor deposition
Ryuta Iba, Hiroki Kambayashi, Yuki Adachi (NUT), Koichiro Oishi, Hironori Katagiri (NITNC), Kanji Yasui (NUT) CPM2019-47
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] CPM2019-47
pp.15-19
CPM, IEE-MAG 2018-11-01
13:25
Niigata Machinaka campus Nagaoka Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface
Taro Saito, Yuki Adachi, Ryuta Iba, Shotaro Ono (Nagaoka Univ. of Tech.), Koichiro Oishi, Hironori Katagiri (Nat. Inst. Tech., Nagaoka Coll.), Kanji Yasui (Nagaoka Univ. of Tech.) CPM2018-42
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] CPM2018-42
pp.5-9
SDM 2018-10-17
16:05
Miyagi Niche, Tohoku Univ. Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] SDM2018-55
pp.15-19
PRMU, CNR 2018-02-20
10:45
Wakayama   C2AT2 HUB: Long-term Characterization of Robot based on Human Child's Mental Development
Shintaro Kawanago, Kazunori Takashio (Keio Univ.) PRMU2017-167 CNR2017-45
(To be available after the conference date) [more] PRMU2017-167 CNR2017-45
pp.127-132
SDM 2017-10-25
15:20
Miyagi Niche, Tohoku Univ. Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] SDM2017-52
pp.15-19
ED 2017-04-20
15:25
Miyagi   Fabrication of SnO2 film using room temperature atomic layer deposition
Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5
Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteri... [more] ED2017-5
pp.17-20
SDM 2016-10-27
11:15
Miyagi Niche, Tohoku Univ. Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] SDM2016-76
pp.39-44
ICD, CPSY 2015-12-18
15:20
Kyoto Kyoto Institute of Technology A FPGA/GPU cooperation in Gravitational Calculation using PEACH2
Chiharu Tsuruta, Takahiro Kaneda (Keio Univ.), Yohei Miki (Univ. of Tsukuba), Hideharu Amano (Keio Univ.) ICD2015-92 CPSY2015-105
PEACH2 (PCI Express Adaptive Communication Hub ver2) has been developed
for low latency direct communication between a... [more]
ICD2015-92 CPSY2015-105
pp.117-122
CPM 2015-11-07
11:50
Niigata Machinaka Campus Nagaoka High-energy H2O beam produced by a Pt-catalyzed H2 - O2 reaction for the metal oxide film deposition
Yusuke Teraguchi, Ryoichi Tajima, Tomoki Nakamura, Kazumasa Takahashi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol.) CPM2015-100
De Laval nozzle structure in a CVD apparatus using a high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction, mean... [more] CPM2015-100
pp.75-79
CPM 2015-11-07
12:10
Niigata Machinaka Campus Nagaoka Effect of NO addition on the properties of ZnO films grown using high-temperature H2O generated by a catalytic reaction on Pt nanoparticles
Yuki Ishizuka, Ryoichi Tajima, Yuki Ohashi, Yasuhiro Tamayama, Kanzi Yasui (NUT) CPM2015-101
We have developed a new CVD method for ZnO film growth using a reaction between an alkylzinc (DMZn) and high- temperatur... [more] CPM2015-101
pp.81-84
SDM 2015-10-29
14:50
Miyagi Niche, Tohoku Univ. A study on Si surface flattening process by annealing Ar/H2ambient
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] SDM2015-72
pp.7-12
RCC, ASN, RCS, NS, SR
(Joint)
2015-07-29
11:35
Nagano JA Naganoken Bldg. Single-Frequency Full-Duplex Wireless Relay with MMSE-Based Time-Domain Equalization via H2 Optimal Control
Hampei Sasahara, Masaaki Nagahara, Kazunori Hayashi, Yutaka Yamamoto (Kyoto Univ.) RCC2015-19
In this report, we propose a design method of an digital filter that suppresses self-interference arising at a single-fr... [more] RCC2015-19
pp.13-14
EMD, CPM, OME 2015-06-19
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28
Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effec... [more] EMD2015-15 CPM2015-25 OME2015-28
pp.23-27
EMD, CPM, OME 2015-06-19
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. Dependence of H2O beam condition produced by a Pt-catalyzed H2-O2reaction on the opening angle of Laval nozzle
Yusuke Teraguchi, Ryoichi Tajima, Tomoki Nakamura, Kazumasa Takahashi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol) EMD2015-16 CPM2015-26 OME2015-29
Nozzle structure in a CVD apparatus using a high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction was examined. ... [more] EMD2015-16 CPM2015-26 OME2015-29
pp.29-34
DC, CPSY 2015-04-17
09:25
Tokyo   Off-loading to PEACH2 of Gravitational Calculation
Chiharu Tsuruta, Takuya Kuhara (Keio univ.), Miki Yohei (Univ. of Tsukuba), Hideharu Amano (Keio univ.) CPSY2015-2 DC2015-2
On-the-fly computation in the field-programmable gate array (FPGA)
used for the switching hub is one potential way to ... [more]
CPSY2015-2 DC2015-2
pp.7-12
ED 2015-04-17
09:55
Miyagi Laboratory for Nanoelectronics and Spintronics Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2015-11
pp.53-58
SDM 2014-10-16
15:20
Miyagi Niche, Tohoku Univ. A study on Si surface flattening process utilizing atmospheric annealing system
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] SDM2014-86
pp.13-17
OME, EMD, CPM 2014-06-20
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. Crystalline structure and dislocation distribution of a ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction
Tomoki Nakamura, Yuki Ishiduka, Naoya Yamaguchi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-16 CPM2014-36 OME2014-24
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] EMD2014-16 CPM2014-36 OME2014-24
pp.43-48
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