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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| US | 2020-11-05 15:45 |
Aichi | Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect Takumi Saotome, Takahiko Yanagitani (Waseda Univ.)  US2020-49 |
Mobile communication device requires high power operation. Nonlinear signals such as second harmonic (H2) generation (SH... [more] | US2020-49 pp.34-39 |
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| CPM | 2019-11-07 15:25 |
Fukui | Fukui univ. | Nitrogen doping to ZnO films in a catalytic reaction assisted chemical vapor deposition Ryuta Iba, Hiroki Kambayashi, Yuki Adachi (NUT), Koichiro Oishi, Hironori Katagiri (NITNC), Kanji Yasui (NUT) CPM2019-47 |
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] | CPM2019-47 pp.15-19 |
| CPM, IEE-MAG | 2018-11-01 13:25 |
Niigata | Machinaka campus Nagaoka | Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface Taro Saito, Yuki Adachi, Ryuta Iba, Shotaro Ono (Nagaoka Univ. of Tech.), Koichiro Oishi, Hironori Katagiri (Nat. Inst. Tech., Nagaoka Coll.), Kanji Yasui (Nagaoka Univ. of Tech.) CPM2018-42 |
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] | CPM2018-42 pp.5-9 |
| SDM | 2018-10-17 16:05 |
Miyagi | Niche, Tohoku Univ. | Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] | SDM2018-55 pp.15-19 |
| PRMU, CNR | 2018-02-20 10:45 |
Wakayama | C2AT2 HUB: Long-term Characterization of Robot based on Human Child's Mental Development Shintaro Kawanago, Kazunori Takashio (Keio Univ.) PRMU2017-167 CNR2017-45 |
(To be available after the conference date) [more] | PRMU2017-167 CNR2017-45 pp.127-132 |
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| SDM | 2017-10-25 15:20 |
Miyagi | Niche, Tohoku Univ. | Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52 |
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] | SDM2017-52 pp.15-19 |
| ED | 2017-04-20 15:25 |
Miyagi | Fabrication of SnO2 film using room temperature atomic layer deposition Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5 |
Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteri... [more] | ED2017-5 pp.17-20 |
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| SDM | 2016-10-27 11:15 |
Miyagi | Niche, Tohoku Univ. | Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76 |
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] | SDM2016-76 pp.39-44 |
| ICD, CPSY | 2015-12-18 15:20 |
Kyoto | Kyoto Institute of Technology | A FPGA/GPU cooperation in Gravitational Calculation using PEACH2 Chiharu Tsuruta, Takahiro Kaneda (Keio Univ.), Yohei Miki (Univ. of Tsukuba), Hideharu Amano (Keio Univ.) ICD2015-92 CPSY2015-105 |
PEACH2 (PCI Express Adaptive Communication Hub ver2) has been developed for low latency direct communication between a... [more] |
ICD2015-92 CPSY2015-105 pp.117-122 |
| CPM | 2015-11-07 11:50 |
Niigata | Machinaka Campus Nagaoka | High-energy H2O beam produced by a Pt-catalyzed H2 - O2 reaction for the metal oxide film deposition Yusuke Teraguchi, Ryoichi Tajima, Tomoki Nakamura, Kazumasa Takahashi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol.) CPM2015-100 |
De Laval nozzle structure in a CVD apparatus using a high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction, mean... [more] | CPM2015-100 pp.75-79 |
| CPM | 2015-11-07 12:10 |
Niigata | Machinaka Campus Nagaoka | Effect of NO addition on the properties of ZnO films grown using high-temperature H2O generated by a catalytic reaction on Pt nanoparticles Yuki Ishizuka, Ryoichi Tajima, Yuki Ohashi, Yasuhiro Tamayama, Kanzi Yasui (NUT) CPM2015-101 |
We have developed a new CVD method for ZnO film growth using a reaction between an alkylzinc (DMZn) and high- temperatur... [more] | CPM2015-101 pp.81-84 |
| SDM | 2015-10-29 14:50 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process by annealing Ar/H2ambient Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2015-72 pp.7-12 |
| RCC, ASN, RCS, NS, SR (Joint) |
2015-07-29 11:35 |
Nagano | JA Naganoken Bldg. | Single-Frequency Full-Duplex Wireless Relay with MMSE-Based Time-Domain Equalization via H2 Optimal Control Hampei Sasahara, Masaaki Nagahara, Kazunori Hayashi, Yutaka Yamamoto (Kyoto Univ.) RCC2015-19 |
In this report, we propose a design method of an digital filter that suppresses self-interference arising at a single-fr... [more] | RCC2015-19 pp.13-14 |
| EMD, CPM, OME | 2015-06-19 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28 |
Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effec... [more] | EMD2015-15 CPM2015-25 OME2015-28 pp.23-27 |
| EMD, CPM, OME | 2015-06-19 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of H2O beam condition produced by a Pt-catalyzed H2-O2reaction on the opening angle of Laval nozzle Yusuke Teraguchi, Ryoichi Tajima, Tomoki Nakamura, Kazumasa Takahashi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol) EMD2015-16 CPM2015-26 OME2015-29 |
Nozzle structure in a CVD apparatus using a high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction was examined. ... [more] | EMD2015-16 CPM2015-26 OME2015-29 pp.29-34 |
| DC, CPSY | 2015-04-17 09:25 |
Tokyo | Off-loading to PEACH2 of Gravitational Calculation Chiharu Tsuruta, Takuya Kuhara (Keio univ.), Miki Yohei (Univ. of Tsukuba), Hideharu Amano (Keio univ.) CPSY2015-2 DC2015-2 |
On-the-fly computation in the field-programmable gate array (FPGA) used for the switching hub is one potential way to ... [more] |
CPSY2015-2 DC2015-2 pp.7-12 |
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| ED | 2015-04-17 09:55 |
Miyagi | Laboratory for Nanoelectronics and Spintronics | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11 |
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] | ED2015-11 pp.53-58 |
| SDM | 2014-10-16 15:20 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process utilizing atmospheric annealing system Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2014-86 pp.13-17 |
| OME, EMD, CPM | 2014-06-20 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Crystalline structure and dislocation distribution of a ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction Tomoki Nakamura, Yuki Ishiduka, Naoya Yamaguchi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-16 CPM2014-36 OME2014-24 |
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] | EMD2014-16 CPM2014-36 OME2014-24 pp.43-48 |
| OME, EMD, CPM | 2014-06-20 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Epitaxial growth of nitrogen-doped ZnO thin films on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction Yuki Ohashi, Shingo Kanouchi, Naoya Yamaguchi, Yasuhiro Tamayama, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-17 CPM2014-37 OME2014-25 |
ZnO films were grown on a-plane sapphire substrates using a reaction between an alkylzinc (DMZn) gas and high-energy H2O... [more] | EMD2014-17 CPM2014-37 OME2014-25 pp.49-53 |
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