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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-03-01 09:00 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
An Anti-parallel Diode 100GHz GaN Frequency Tripler for Beyond 5G Using Terahertz Band Shimpei Yamashita, Yoshifumi Kawamura, Keigo Nakatani, Yoshitaka Kamo, Koji Yamanaka (MELCO)  MW2023-186 |
In this report, we present an anti-parallel diode frequency tripler GaN MMIC for the 100GHz band, which utilizes the ter... [more] | MW2023-186 pp.62-65 |
| MW | 2024-03-01 10:15 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Loss at Dual-Power-Level Optimization Taiki Kobayashi, Kazuhiko Honjo, Ryo Ishikawa (UEC) MW2023-189 |
The development of the fifth generation mobile communications (5G) will use higher frequencies such as millimeter wave b... [more] | MW2023-189 pp.74-77 |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech) ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| ED, MW | 2024-01-25 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Development of GaN HEMT using a diamond substrate as a heat spreader Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric) ED2023-69 MW2023-161 |
1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface... [more] | ED2023-69 MW2023-161 pp.15-18 |
| AP, WPT (Joint) |
2024-01-17 14:25 |
Niigata | Tokimate, Niigata University (Primary: On-site, Secondary: Online) |
2.45 GHz High-Efficiency Power Amplifier for Integration and Cooperation of Telecommunication and Wireless Power Transfer Yuki Takagi, Yuta Nakamoto, Takashi Hirakawa, Yoshichika Ohta, Naoki Hasegawa (SB) WPT2023-30 |
In this paper, we present a transmitter configuration of wireless devices that is optimized for both information transmi... [more] | WPT2023-30 pp.1-5 |
| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| MW | 2023-11-16 13:25 |
Okinawa | Nago City Industrial Support Center (Okinawa) (Primary: On-site, Secondary: Online) |
Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism Yuta Fuchibe, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric Corp) MW2023-129 |
We propose a new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converters (DACs). The RP-DAC is a D... [more] | MW2023-129 pp.19-22 |
| MW, AP (Joint) |
2023-09-28 10:10 |
Kochi | Kochi Castle Museum of History (Primary: On-site, Secondary: Online) |
C-Ku-band GaN MMIC Low Noise Amplifier Using Frequency Selective Parallel Feedback Circuit Ken Kudara, Jun Kamioka, Eigo Kuwata, Yutaro Yamaguchi, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2023-81 |
This paper represents a C-Ku band GaN MMIC low noise amplifier (LNA) for a transmitter and receiver module. In order to ... [more] | MW2023-81 pp.7-10 |
| MW | 2023-06-22 14:25 |
Kanagawa | Yugawara-machi Shou-Kou-Kai Bldg. (Primary: On-site, Secondary: Online) |
A Suitable for S-LMBA Consideration of wideband harmonic tuning circuit Hirotaka Asami, Takashi Sumiyoshi, Hiroshi Yamamoto, Takashi Maehata (SEI) MW2023-22 |
In next-generation mobile communications, broadband modulation signals are used to achieve high-capacity and high-speed ... [more] | MW2023-22 pp.13-18 |
| MW | 2023-06-23 09:30 |
Kanagawa | Yugawara-machi Shou-Kou-Kai Bldg. (Primary: On-site, Secondary: Online) |
[Special Talk]
Fundamentals of GaN HEMT Large-Signal Model for Microwave Amplifier Hiroshi Yamamoto, Ken Kikuchi (Sumitomo Electric) MW2023-25 |
To improve RF performance of microwave amplifiers, systematic circuit design techniques are required to maximize perform... [more] | MW2023-25 pp.29-32 |
| SANE | 2023-05-23 10:10 |
Kanagawa | Information Technology R & D Center, MITSUBISHI Electric Corp. (Primary: On-site, Secondary: Online) |
Broadband High Power, High Efficiency Microwave Amplifiers Enabled by GaN HEMT Eigo Kuwata, Jun Kamioka, Shintaro Shinjo, Koji Yamanaka (MELCO) SANE2023-3 |
Semiconductors are increasingly replacing electron tubes in microwave transmitters used for observation, communication a... [more] | SANE2023-3 pp.12-17 |
| MW | 2023-03-02 13:25 |
Tottori | Tottori Univ. (Primary: On-site, Secondary: Online) |
Characteristic Improvement at Back-Off Region by Three-Power-Level Optimization for 3.7-GHz GaN HEMT Doherty Amplifier Masataka Yamamoto, Kazuhiko Honjo, Yoichiro Yakayama, Ryo Ishikawa (UEC) MW2022-163 |
Increasing the communication capacity and speed is required for recent wireless communication systems. Digital modulated... [more] | MW2022-163 pp.37-41 |
| MW | 2023-03-02 14:30 |
Tottori | Tottori Univ. (Primary: On-site, Secondary: Online) |
Quasi millimeter wave high-power rectifier with GaAs E-pHEMT GADs Naoya Kakutani, Yuya Hirose, Naoki Sakai, Kenji Itoh (KIT) MW2022-165 |
In this report, quasi-millimeter wave 1 W-class double-voltage rectifier MMIC with 0.18 μm GaAs E-PHEMT gated anode diod... [more] | MW2022-165 pp.48-53 |
| MW, ED | 2023-01-27 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters
-- Device Simulation Study -- Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150 |
GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characte... [more] | ED2022-91 MW2022-150 pp.29-32 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| OME, IEE-DEI | 2023-01-18 13:40 |
Aichi | Aichi Himaka island ホテル浦島 | [Invited Lecture]
Interface potential distribution in GaN-HEMT using Laser Terahertz Emission Microscope Noriyuki Takada (AIST) OME2022-63 |
Laser Terahertz Emission Microscopy (LTEM) can observe electric field/charge transfer by detecting THz waves emitted due... [more] | OME2022-63 pp.1-3 |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
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| ED, MWPTHz | 2022-12-19 16:45 |
Miyagi | Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] | ED2022-77 MWPTHz2022-48 pp.28-33 |
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| ED, MWPTHz | 2022-12-19 17:10 |
Miyagi | ED2022-78 MWPTHz2022-49 |
We experimentally investigate the effect of high-intensity subcarrier signal input to the UTC-PD-integrated HEMT working... [more] | ED2022-78 MWPTHz2022-49 pp.34-37 |
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