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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EST | 2023-05-19 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Analysis of a TM-pass polarizer using the three-dimensional semi-implicit FDTD method Hiroto Miyao, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.)  EST2023-5 |
We analyze a TM-pass/TE-stop terahertz waveguide polarizer with an InAs semiconductor layer using the three-dimensional ... [more] | EST2023-5 pp.23-27 |
| ED, MWPTHz | 2022-12-19 16:45 |
Miyagi | Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] | ED2022-77 MWPTHz2022-48 pp.28-33 |
|
| SDM | 2021-01-28 16:05 |
Online | Online | [Invited Talk]
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2020-54 |
There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness flu... [more] | SDM2020-54 pp.21-24 |
| EST | 2021-01-22 15:35 |
Online | Online | Efficient analysis of a TM-pass terahertz waveguide polarizer using implicit and semi-implicit FDTD methods Shoko Gomi, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2020-77 |
A TM-pass terahertz waveguide polarizer is efficiently analyzed using implicit and semi-implicit finite- difference time... [more] | EST2020-77 pp.124-128 |
| EST | 2020-01-31 14:15 |
Oita | Beppu International Convention Center | Analysis of a TE-pass/TM-stop waveguide polarizer in the THz region Sumire Takahashi, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2019-98 |
We propose a TE-pass/TM-stop waveguide polarizer with a semiconductor layer in the terahertz region. First, we investiga... [more] | EST2019-98 pp.97-102 |
| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-17 11:40 |
Osaka | Osaka University Nakanoshima Center | A study of deep dry etching for Photonic Crystal CirD Laser Li Zeng, Shun Mizoguchi, Xiuyu Zhang, Kento Takeuchi, Hirotake Kajii, Masato Morifuji, Akihiro Maruta, Masahiko Kondow (Osaka Univ.) PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 |
In order to fabricate a photonic crystal laser with circular defect (CirD) resonator, we study deep dry etching of GaAs ... [more] | PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 pp.23-26 |
| EST | 2018-09-06 15:15 |
Okinawa | Kumejima-machi, Okinawa | Evaluation of the characteristics of a terahertz SPR waveguide sensor with an analyte container Kei Yoshihara, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2018-49 |
Frequency responses of a terahertz surface plasmon resonance (SPR) waveguide sensor with an analyte container are quanti... [more] | EST2018-49 pp.35-39 |
| LQE | 2018-02-23 12:45 |
Kanagawa | [Invited Talk]
Development of AlInAs APD in Optical Communications System
-- Guardring-free Planar AlInAs APD -- Eiji Yagyu (Mitsubishi Electric) LQE2017-153 |
AlInAs APDs have superior performance than InP APDs in principle. We make an AlInAs avalanche photodiode (APD) practicab... [more] | LQE2017-153 pp.11-14 |
|
| ED, THz | 2017-12-19 09:40 |
Miyagi | RIEC, Tohoku Univ | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] | ED2017-82 pp.37-40 |
| ED | 2016-12-19 14:00 |
Miyagi | RIEC, Tohoku Univ | [Invited Talk]
Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80 |
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] | ED2016-80 pp.1-5 |
| LQE, OPE, EMD, R, CPM | 2016-08-25 10:10 |
Hokkaido | Fabrication of GaInAsP/SOI Hybrid Fabry-Perot Laser with AlInAs-oxide Confinement Structure Junichi Suzuki, Yusuke Hayashi, Satoshi Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Titech) R2016-21 EMD2016-25 CPM2016-34 OPE2016-55 LQE2016-30 |
In order to realize a highly efficient GaInAsP/SOI hybrid laser, we fabricated a GaInAsP/SOI hybrid Fabry-Pérot (FP... [more] | R2016-21 EMD2016-25 CPM2016-34 OPE2016-55 LQE2016-30 pp.9-14 |
|
| TL | 2016-01-29 13:00 |
Tokyo | Meiji University (Academy Common) | The justice limits ethic
-- The concept of Levinas's visage and justice which has two faces -- Tsuji Kazuki (Waseda Univ.) TL2015-57 |
Emmanuel Lévinas is a French philosopher known for his conceptualization of "the other person" as an infinite existence.... [more] | TL2015-57 pp.13-18 |
| LQE | 2015-12-18 14:45 |
Tokyo | [Invited Talk]
Realization and Applications of Mass-Productive Quantum Dot Lasers Kenichi Nishi (Univ.Tokyo), Keizo Takemasa, Mitsuru Sugawara (QDLaser), Yasuhiko Arakawa (Univ.Tokyo) LQE2015-130 |
The improvements in self-assembled InAs quantum dots (QDs) have been intensively promoted in order to achieve QD lasers ... [more] | LQE2015-130 pp.31-35 |
|
| OPE, OME | 2015-11-27 09:15 |
Kagawa | Sunport-hall Takamatsu | [Invited Talk]
Bio-sensing/imaging using GaInAsP semiconductor nanolasers Toshihiko Baba, Shoji Hachuda, Takumi Watanabe, Daichi Takahashi, Yuki Furuta, Keisuke Watanabe, Hiroshi Abe, Yoji Kishi, Mai Sakemoto, Shota Kita (Yokohama Nat'l Univ.) OME2015-70 OPE2015-136 |
GaInAsP photonic crystal nanolaser is used as a bio-sensor because its laser characteristics are sensitive to the enviro... [more] | OME2015-70 OPE2015-136 pp.31-36 |
| CPM, OPE, LQE, R, EMD | 2015-08-28 10:55 |
Aomori | Aomori-Bussankan-Asupamu | 25.8 Gbps Direct Modulation AlGaInAs DFB-LD with Low Power Consumption for 100 Gbps Application in the Data Center Naoki Nakamura, Masaaki Shimada, Go Sakaino, Takashi Nagira, Harunaka Yamaguchi, Yuichiro Okunuki, Atsushi Sugitatsu, Masayoshi Takemi (Mitsubishi Electric) R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48 |
Data centers are introducing 100Gbps network systems because of data traffic increasing, and also require lower power co... [more] | R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48 pp.87-90 |
| CPM, OPE, LQE, R, EMD | 2015-08-28 14:50 |
Aomori | Aomori-Bussankan-Asupamu | Development of broadband QD ridge-waveguide laser diode in 1.1μm Katsumi Yoshizawa, Yoshinori Sawado (PioneerMTC), Kouichi Akahane, Naokatsu Yamamoto (NICT) R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 |
To develop a new optical frequency resource for the optical communications, we focused on T-Band (1000-1260nm) and the O... [more] | R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 pp.115-118 |
| LQE, LSJ | 2015-05-21 15:15 |
Ishikawa | Broadband near-infrared light source based on self-assembled InAs quantum dots for optical coherence tomography Nobuhiko Ozaki, Takuma Yasuda, Hiroshi Shibata (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto (NIMS), Richard Hogg (Univ. Sheffield) LQE2015-5 |
A broadband near-infrared light source based on self-assembled InAs quantum dots (QDs) with controlled emission waveleng... [more] | LQE2015-5 pp.25-28 |
|
| SDM | 2013-12-13 09:40 |
Nara | NAIST | Photo Sensor using Poly-Si Thin-Film Devices Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-118 |
In this study, we developed photo sensors using illuminance dependence of current-voltage characteristics of pin Thin-Fi... [more] | SDM2013-118 pp.13-18 |
| OPE, LQE, CPM, EMD, R | 2013-08-29 10:45 |
Hokkaido | sun-refre Hakodate | Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.) R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 |
Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually g... [more] | R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 pp.19-24 |
| NC, IPSJ-BIO | 2013-06-28 13:35 |
Okinawa | Okinawa Institute of Science and Technology | Estimation of Key Enzymes for Axonal Growth Yuki Maruno (NAIST), Yuichi Sakumura (Aichi Pref. Univ.), Kazushi Ikeda (NAIST) NC2013-10 |
Cellular morphogenesis is regulated by various kinds of kinases. Although many kinases that regulate neurite growth have... [more] | NC2013-10 pp.123-126 |
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