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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 68  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
EST 2023-05-19
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Analysis of a TM-pass polarizer using the three-dimensional semi-implicit FDTD method
Hiroto Miyao, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2023-5
We analyze a TM-pass/TE-stop terahertz waveguide polarizer with an InAs semiconductor layer using the three-dimensional ... [more] EST2023-5
ED, MWPTHz 2022-12-19
Miyagi   Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] ED2022-77 MWPTHz2022-48
SDM 2021-01-28
Online Online [Invited Talk] Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs
Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2020-54
There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness flu... [more] SDM2020-54
EST 2021-01-22
Online Online Efficient analysis of a TM-pass terahertz waveguide polarizer using implicit and semi-implicit FDTD methods
Shoko Gomi, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2020-77
A TM-pass terahertz waveguide polarizer is efficiently analyzed using implicit and semi-implicit finite- difference time... [more] EST2020-77
EST 2020-01-31
Oita Beppu International Convention Center Analysis of a TE-pass/TM-stop waveguide polarizer in the THz region
Sumire Takahashi, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2019-98
We propose a TE-pass/TM-stop waveguide polarizer with a semiconductor layer in the terahertz region. First, we investiga... [more] EST2019-98
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-17
Osaka Osaka University Nakanoshima Center A study of deep dry etching for Photonic Crystal CirD Laser
Li Zeng, Shun Mizoguchi, Xiuyu Zhang, Kento Takeuchi, Hirotake Kajii, Masato Morifuji, Akihiro Maruta, Masahiko Kondow (Osaka Univ.) PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53
In order to fabricate a photonic crystal laser with circular defect (CirD) resonator, we study deep dry etching of GaAs ... [more] PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53
EST 2018-09-06
Okinawa Kumejima-machi, Okinawa Evaluation of the characteristics of a terahertz SPR waveguide sensor with an analyte container
Kei Yoshihara, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2018-49
Frequency responses of a terahertz surface plasmon resonance (SPR) waveguide sensor with an analyte container are quanti... [more] EST2018-49
LQE 2018-02-23
Kanagawa   [Invited Talk] Development of AlInAs APD in Optical Communications System -- Guardring-free Planar AlInAs APD --
Eiji Yagyu (Mitsubishi Electric) LQE2017-153
AlInAs APDs have superior performance than InP APDs in principle. We make an AlInAs avalanche photodiode (APD) practicab... [more] LQE2017-153
ED, THz 2017-12-19
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
ED 2016-12-19
Miyagi RIEC, Tohoku Univ [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well
Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] ED2016-80
LQE, OPE, EMD, R, CPM 2016-08-25
Hokkaido   Fabrication of GaInAsP/SOI Hybrid Fabry-Perot Laser with AlInAs-oxide Confinement Structure
Junichi Suzuki, Yusuke Hayashi, Satoshi Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Titech) R2016-21 EMD2016-25 CPM2016-34 OPE2016-55 LQE2016-30
In order to realize a highly efficient GaInAsP/SOI hybrid laser, we fabricated a GaInAsP/SOI hybrid Fabry-Pérot (FP... [more] R2016-21 EMD2016-25 CPM2016-34 OPE2016-55 LQE2016-30
TL 2016-01-29
Tokyo Meiji University (Academy Common) The justice limits ethic -- The concept of Levinas's visage and justice which has two faces --
Tsuji Kazuki (Waseda Univ.) TL2015-57
Emmanuel Lévinas is a French philosopher known for his conceptualization of "the other person" as an infinite existence.... [more] TL2015-57
LQE 2015-12-18
Tokyo   [Invited Talk] Realization and Applications of Mass-Productive Quantum Dot Lasers
Kenichi Nishi (Univ.Tokyo), Keizo Takemasa, Mitsuru Sugawara (QDLaser), Yasuhiko Arakawa (Univ.Tokyo) LQE2015-130
The improvements in self-assembled InAs quantum dots (QDs) have been intensively promoted in order to achieve QD lasers ... [more] LQE2015-130
OPE, OME 2015-11-27
Kagawa Sunport-hall Takamatsu [Invited Talk] Bio-sensing/imaging using GaInAsP semiconductor nanolasers
Toshihiko Baba, Shoji Hachuda, Takumi Watanabe, Daichi Takahashi, Yuki Furuta, Keisuke Watanabe, Hiroshi Abe, Yoji Kishi, Mai Sakemoto, Shota Kita (Yokohama Nat'l Univ.) OME2015-70 OPE2015-136
GaInAsP photonic crystal nanolaser is used as a bio-sensor because its laser characteristics are sensitive to the enviro... [more] OME2015-70 OPE2015-136
CPM, OPE, LQE, R, EMD 2015-08-28
Aomori Aomori-Bussankan-Asupamu 25.8 Gbps Direct Modulation AlGaInAs DFB-LD with Low Power Consumption for 100 Gbps Application in the Data Center
Naoki Nakamura, Masaaki Shimada, Go Sakaino, Takashi Nagira, Harunaka Yamaguchi, Yuichiro Okunuki, Atsushi Sugitatsu, Masayoshi Takemi (Mitsubishi Electric) R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48
Data centers are introducing 100Gbps network systems because of data traffic increasing, and also require lower power co... [more] R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48
CPM, OPE, LQE, R, EMD 2015-08-28
Aomori Aomori-Bussankan-Asupamu Development of broadband QD ridge-waveguide laser diode in 1.1μm
Katsumi Yoshizawa, Yoshinori Sawado (PioneerMTC), Kouichi Akahane, Naokatsu Yamamoto (NICT) R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54
To develop a new optical frequency resource for the optical communications, we focused on T-Band (1000-1260nm) and the O... [more] R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54
LQE, LSJ 2015-05-21
Ishikawa   Broadband near-infrared light source based on self-assembled InAs quantum dots for optical coherence tomography
Nobuhiko Ozaki, Takuma Yasuda, Hiroshi Shibata (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto (NIMS), Richard Hogg (Univ. Sheffield) LQE2015-5
A broadband near-infrared light source based on self-assembled InAs quantum dots (QDs) with controlled emission waveleng... [more] LQE2015-5
SDM 2013-12-13
Nara NAIST Photo Sensor using Poly-Si Thin-Film Devices
Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-118
In this study, we developed photo sensors using illuminance dependence of current-voltage characteristics of pin Thin-Fi... [more] SDM2013-118
OPE, LQE, CPM, EMD, R 2013-08-29
Hokkaido sun-refre Hakodate Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates
Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.) R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31
Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually g... [more] R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31
NC, IPSJ-BIO 2013-06-28
Okinawa Okinawa Institute of Science and Technology Estimation of Key Enzymes for Axonal Growth
Yuki Maruno (NAIST), Yuichi Sakumura (Aichi Pref. Univ.), Kazushi Ikeda (NAIST) NC2013-10
Cellular morphogenesis is regulated by various kinds of kinases. Although many kinases that regulate neurite growth have... [more] NC2013-10
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