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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 14:45 |
Miyagi | [Invited Talk]
Zero bias rectenna for 300GHz band detection integrated with a GaAsSb/InGaAs backward diode Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu)  ED2022-74 MWPTHz2022-45 |
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] | ED2022-74 MWPTHz2022-45 pp.15-18 |
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| ED, MWPTHz | 2022-12-19 16:45 |
Miyagi | Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] | ED2022-77 MWPTHz2022-48 pp.28-33 |
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| ED, THz | 2017-12-19 09:40 |
Miyagi | RIEC, Tohoku Univ | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] | ED2017-82 pp.37-40 |
| MW, ED | 2017-01-27 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] | ED2016-103 MW2016-179 pp.35-40 |
| ED | 2016-12-19 14:00 |
Miyagi | RIEC, Tohoku Univ | [Invited Talk]
Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80 |
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] | ED2016-80 pp.1-5 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 14:15 |
Aomori | Aomori-Bussankan-Asupamu | [Invited Talk]
Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 |
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] | R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 pp.27-32 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| ED | 2014-12-22 14:10 |
Miyagi | Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] | ED2014-100 pp.9-13 |
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| ED | 2014-12-22 14:35 |
Miyagi | Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101 |
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] | ED2014-101 pp.15-19 |
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| OPE, LQE | 2014-12-19 12:05 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | [Encouragement Talk]
InGaAs photodetectors based on photonic crystal waveguide including ultrasmall buried heterostructure Kengo Nozaki, Shinji Matsuo, Takuro Fujii, Koji Takeda, Eiichi Kuramochi, Masaya Notomi (NTT) OPE2014-145 LQE2014-132 |
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstra... [more] | OPE2014-145 LQE2014-132 pp.31-35 |
| ED | 2014-08-01 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56 |
Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] | ED2014-56 pp.19-24 |
| ED | 2014-08-01 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) ED2014-57 |
III-V semiconductors have attracted much attention as promising n-type channel materials for the future logic device to ... [more] | ED2014-57 pp.25-28 |
| SDM | 2014-01-29 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137 |
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] | SDM2013-137 pp.9-12 |
| ED, MW | 2014-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs tri-gate MOSFETs with MOVPE regrown source/drain Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2013-115 MW2013-180 pp.29-33 |
| ED | 2013-12-16 13:55 |
Miyagi | Research Institute of Electrical Communication Tohoku University | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92 |
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] | ED2013-92 pp.13-17 |
| QIT (2nd) |
2013-11-18 - 2013-11-19 |
Tokyo | Waseda Univ. | [Poster Presentation]
Designing GHz-clock operating balanced single photon detector and evaluation Hirofumi Hashimoto, Akihisa Tomita, Atsushi Okamoto (Hokkaido Univ.) |
Because of low power consumption and small footprint, avalanche photo diodes (APD) have been commonly applied to photon ... [more] | |
| SDM | 2013-11-14 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Advanced MOSFET simulations using a quantum energy trasport model Shohiro Sho, Shinji Odanaka (Osaka Univ.) SDM2013-105 |
A quantum energy transport(QET) model is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. I... [more] | SDM2013-105 pp.31-36 |
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