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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2022-12-19
Miyagi   Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] ED2022-77 MWPTHz2022-48
ED, THz 2021-12-21
(Primary: On-site, Secondary: Online)
[Invited Talk] InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application
Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] ED2021-55
Tokyo Tokyo Tech 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology
Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] MW2018-60
ED 2007-11-27
Miyagi Tohoku Univ. Research Institute of Electrical Communication A 7.6-ps InP-HEMT pulse generator for multi-Gbps millimeter-wave communication systems
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu) ED2007-189
Using a 0.13-um-gate-length InP-HEMT technology, we developed a simple pulse generator circuit (PG) with a logical negat... [more] ED2007-189
MW, ED 2005-01-18
Tokyo   -
-, -, -, - (OKI)
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] ED2004-221 MW2004-228
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