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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 35  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2023-04-22
10:05
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne
Tatsuya Okada, C. J. Koswaththage (Univ. Ryukyus), Takashi Kajiwar, Taizoh Sadoh (Kyushu Univ), Takashi Noguchi (Univ. Ryukyus) SDM2023-8 OME2023-8
For realizing high crystallinity InSb films on low-cost insulating substrate, we investigate the crystallization using R... [more] SDM2023-8 OME2023-8
pp.30-31
SDM, OME 2023-04-22
10:30
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Crystallization of InSb Films on Glass by RTA
Takashi Kajiwara (Kyushu Univ.), Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi (Univ. of the Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2023-9 OME2023-9
To achieve low-cost and high-mobility InSb thin films, we studied the crystallization of InSb films sputtered on a glass... [more] SDM2023-9 OME2023-9
pp.32-33
EST 2022-01-28
15:10
Online Online FDTD analysis of an InSb sphere array on a dielectric substrate in the THz region
Takuma Kuroda, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2021-92
We investigate a periodic array of an InSb sphere on a substrate at terahertz (THz) frequencies using the three-dimensio... [more] EST2021-92
pp.173-177
ED, THz 2021-12-21
10:20
Miyagi
(Primary: On-site, Secondary: Online)
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures
Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] ED2021-57
pp.44-47
EST 2020-01-31
13:25
Oita Beppu International Convention Center A polarization splitter using a hybrid plasmonic waveguide operating in the terahertz region
Arata Yamamoto, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2019-96
We propose a polarization splitter consisting of a hybrid plasmonic waveguide (HPW) and a dielectric waveguide (DW) in t... [more] EST2019-96
pp.85-89
EST 2020-01-31
13:50
Oita Beppu International Convention Center Comparative Study of THz sensors with InSb elements
Jun Nakano, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2019-97
We investigate and compare terahertz (THz) sensors with indium antimonide (InSb) elements. THz sensors with cross-dipole... [more] EST2019-97
pp.91-96
EST 2020-01-31
14:15
Oita Beppu International Convention Center Analysis of a TE-pass/TM-stop waveguide polarizer in the THz region
Sumire Takahashi, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2019-98
We propose a TE-pass/TM-stop waveguide polarizer with a semiconductor layer in the terahertz region. First, we investiga... [more] EST2019-98
pp.97-102
ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
EST 2018-09-06
15:15
Okinawa Kumejima-machi, Okinawa Evaluation of the characteristics of a terahertz SPR waveguide sensor with an analyte container
Kei Yoshihara, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2018-49
Frequency responses of a terahertz surface plasmon resonance (SPR) waveguide sensor with an analyte container are quanti... [more] EST2018-49
pp.35-39
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-18
15:30
Mie Iseshi Kanko Bunka Kaikan Improvement of the characteristics of a terahertz SPR waveguide sensor with an analyte container
Keisuke Shimizu, Jun Shibayama, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) PN2016-50 EMT2016-79 OPE2016-125 LQE2016-114 EST2016-89 MWP2016-63
Frequency responses of a terahertz surface plasmon resonance waveguide sensor with an analyte container are improved wit... [more] PN2016-50 EMT2016-79 OPE2016-125 LQE2016-114 EST2016-89 MWP2016-63
pp.51-56
ED 2016-07-23
15:55
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2016-31
Recently, the improvement of the performance by the reduction in device size of the semiconductor device with Si is reac... [more] ED2016-31
pp.21-24
LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] 2016-01-28
09:55
Hyogo   FDTD analysis of terahertz filters with InSb gratings
Jun Shibayama, Ryo Umezawa, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) PN2015-61 EMT2015-112 OPE2015-174 LQE2015-161 EST2015-118 MWP2015-87
We investigate the transmission characteristics of THz filters with the localized surface plasmon resonance excited arou... [more] PN2015-61 EMT2015-112 OPE2015-174 LQE2015-161 EST2015-118 MWP2015-87
pp.169-174
ED 2015-07-25
11:05
Ishikawa IT Business Plaza Musashi 5F Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] ED2015-45
pp.45-49
EST 2015-05-15
09:30
Tokyo Hosei Univ. (Koganei Campus) Numerical analysis of a surface plasmon resonance waveguide sensor in the THz region
Jun Shibayama, Keisuke Shimizu, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) EST2015-1
A surface plasmon resonance (SPR) waveguide sensor with indium antimonide (InSb) adopted for the sensing section is prop... [more] EST2015-1
pp.1-6
ED 2014-08-01
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] ED2014-55
pp.13-18
ED 2013-08-09
11:20
Toyama University of Toyama Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction
Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] ED2013-49
pp.61-65
SDM, ED 2013-02-27
16:55
Hokkaido Hokkaido Univ. Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164
Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] ED2012-135 SDM2012-164
pp.39-42
ED 2012-07-27
09:30
Fukui Fukui University Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method
Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) ED2012-48
The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are
analyzed... [more]
ED2012-48
pp.37-42
ED 2011-07-30
13:55
Niigata Multimedia system center, Nagaoka Univ. of Tech. InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2011-55
We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, ... [more] ED2011-55
pp.91-96
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