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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 28  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
AP, WPT
(Joint)
2025-01-24
11:10
Shimane Rokan, Matsue (Shimane, Online)
(Primary: On-site, Secondary: Online)
Development of a 5.75GHz 5W Rectenna System Using a Slot-Coupled Feed Antenna
Kazuhiro Ishihara, Yasuaki Hasegawa, Lianchong Yan, Motoki Oshima (Nippon Antenna), Naoki Sakai, Kenji Itoh (Kanazawa IT.) WPT2024-36
In this report, we show that we have developed a new rectenna system using a highly efficient rectenna configuration tha... [more] WPT2024-36
pp.17-20
MW 2024-11-15
11:00
Okinawa JA Kume-jima Yuntaku house (Okinawa, Online)
(Primary: On-site, Secondary: Online)
Broadband X-Band GaN MMIC High Power Amplifier and Driver Amplifier Chipset
Kento Saiki, Jun Kamioka, Shintaro Shinjo (Mitsubishi Electric) MW2024-136
An X-band GaN MMIC amplifier chipset consists of high-power amplifier (HPA) and driver amplifier (DA) is presented. Ampl... [more] MW2024-136
pp.65-68
MW 2024-06-14
10:10
Tokyo Hachijomachi-shoko-kai (Tokyo, Online)
(Primary: On-site, Secondary: Online)
A Ka-band 15 W Output Power, High Efficiency GaN MMIC Power Amplifier for Wideband Multi-carrier Satellite Communication
Keigo Nakatani, Yutaro Yamaguchi, Ko Kanaya, Akihito Hirai (Mitsubishi electric corp.) MW2024-24
This paper presents the design and measurement of a Ka-band 15 W output power and 30% power added efficiency (PAE) GaN m... [more] MW2024-24
pp.28-33
MW 2024-02-29
13:25
Okayama Okayama Prefectural University (Okayama, Online)
(Primary: On-site, Secondary: Online)
High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs
Taiki Hirase, Yuya Hirose, Tsukasa Hirai (Kanazawa IT.), Gaku Kato, Takamasa Kono (Nisshinbo Micro Devices), Naoki Sakai, Kenji Itoh (Kanazawa IT.) MW2023-179
In In this paper, the 920 MHz band low power rectifiers with low threshold voltage GaAs gated anode diodes (GADs) are de... [more] MW2023-179
pp.25-30
MW 2024-03-01
09:00
Okayama Okayama Prefectural University (Okayama, Online)
(Primary: On-site, Secondary: Online)
An Anti-parallel Diode 100GHz GaN Frequency Tripler for Beyond 5G Using Terahertz Band
Shimpei Yamashita, Yoshifumi Kawamura, Keigo Nakatani, Yoshitaka Kamo, Koji Yamanaka (MELCO) MW2023-186
In this report, we present an anti-parallel diode frequency tripler GaN MMIC for the 100GHz band, which utilizes the ter... [more] MW2023-186
pp.62-65
MW 2024-03-01
10:15
Okayama Okayama Prefectural University (Okayama, Online)
(Primary: On-site, Secondary: Online)
28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Loss at Dual-Power-Level Optimization
Taiki Kobayashi, Kazuhiko Honjo, Ryo Ishikawa (UEC) MW2023-189
The development of the fifth generation mobile communications (5G) will use higher frequencies such as millimeter wave b... [more] MW2023-189
pp.74-77
MW, AP
(Joint)
2023-09-28
10:10
Kochi Kochi Castle Museum of History (Kochi, Online)
(Primary: On-site, Secondary: Online)
C-Ku-band GaN MMIC Low Noise Amplifier Using Frequency Selective Parallel Feedback Circuit
Ken Kudara, Jun Kamioka, Eigo Kuwata, Yutaro Yamaguchi, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2023-81
This paper represents a C-Ku band GaN MMIC low noise amplifier (LNA) for a transmitter and receiver module. In order to ... [more] MW2023-81
pp.7-10
MW 2023-05-19
10:50
Kyoto Ritsumeikan University (Kyoto, Online)
(Primary: On-site, Secondary: Online)
5.8 GHz band 10 W rectenna on the aluminum nitride antenna for thermal dispersion
Naoki Sakai, Naoki Furutani, Yuya Hirose, Kaito Uchiyama, Fumiya Komatsu, Kenji Itoh (KIT) MW2023-15
This paper presents the 5.8 GHz band 10W rectenna with GaAs E-pHEMT gated anode diode (GAD) on the aluminum nitride (AlN... [more] MW2023-15
pp.33-37
WPT, MW 2023-04-13
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo, Online)
(Primary: On-site, Secondary: Online)
[Invited Talk] High-power rectennas for microwave power transfer systems
Kenji Itoh, Keisuke Noguchi, Naoki Sakai (Kanazawa IT) WPT2023-2 MW2023-2
In this report, our research activities on rectennas for microwave power transfer (MPT) systems are demonstrated. For th... [more] WPT2023-2 MW2023-2
pp.2-9
MW 2023-03-02
14:30
Tottori Tottori Univ. (Tottori, Online)
(Primary: On-site, Secondary: Online)
Quasi millimeter wave high-power rectifier with GaAs E-pHEMT GADs
Naoya Kakutani, Yuya Hirose, Naoki Sakai, Kenji Itoh (KIT) MW2022-165
In this report, quasi-millimeter wave 1 W-class double-voltage rectifier MMIC with 0.18 μm GaAs E-PHEMT gated anode diod... [more] MW2022-165
pp.48-53
ED, MW 2022-01-27
15:30
Online Online (Online) [Invited Lecture] A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique
Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo (UEC) ED2021-67 MW2021-109
In the 5G wireless communication system, a quasi-millimeter wave band such as the 28 GHz band is also used. Doherty powe... [more] ED2021-67 MW2021-109
pp.28-31
OPE, MW, IEE-EMT, MWP, EST, EMT, THz [detail] 2021-07-15
11:30
Online Online (Online) Design of 94GHz High Efficiency Rectifier MMIC
Ren Furumoto, Hayato Shimizu, Kenjiro Nishikawa (Kagoshima Univ.) EMT2021-10 MW2021-15 OPE2021-4 EST2021-11 MWP2021-12
This paper presents a 94 GHz band high-efficiency rectifier MMIC using a GaAs Schottky diode. The diode used here is a c... [more] EMT2021-10 MW2021-15 OPE2021-4 EST2021-11 MWP2021-12
pp.16-21
ED, THz [detail] 2019-12-23
16:20
Miyagi (Miyagi) InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
MW 2019-11-14
15:10
Okinawa Minami Daido Villa. Tamokuteki Koryu Center (Okinawa) A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network
Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo (MitsubishiElectric) MW2019-105
This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15m Gall... [more] MW2019-105
pp.29-34
MW 2019-11-14
16:40
Okinawa Minami Daido Villa. Tamokuteki Koryu Center (Okinawa) 2.5-10 GHz GaN MMIC HPA utilizing distributed amplifier with band-pass filter configuration
Jun Kamioka, Masatake Hangai, Shinichi Miwa, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2019-108
2.5-10 GHz GaN MMIC HPA utilizing distributed amplifier with band-pass filter configuration and its design method are re... [more] MW2019-108
pp.47-51
MW, EST, OPE, MWP, EMT, IEE-EMT, THz [detail] 2019-07-18
17:05
Hokkaido Hakodate City Central Library (Hokkaido) Study on Broadband All-Pass Networks Phase-Shifter MMIC
Ryota Komaru, Masatake Hangai, Shinichi Miwa, Yoshihiro Tsukahara, Shintaro Shinjo (Mitsubishi Electric) EMT2019-19 MW2019-32 OPE2019-23 EST2019-21 MWP2019-19
An ultra broadband MMIC phase shifter has been developed. The phase shifter based on series all-pass networks and more s... [more] EMT2019-19 MW2019-32 OPE2019-23 EST2019-21 MWP2019-19
pp.81-84
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] 2018-07-19
15:00
Hokkaido (Hokkaido) A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters
Jun Kamioka, Eigo Kuwata, Kazuhiko Nakahara, Yoshitaka Kamo, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric) EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28
A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters is presented. GaN MMIC ... [more] EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28
pp.119-124
MW, WPT 2018-04-27
14:50
Tokyo Kikai-Shinko-Kaikan Building (Tokyo) S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate
Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] WPT2018-5 MW2018-5
pp.19-23
ED, MW 2018-01-26
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] ED2017-98 MW2017-167
pp.25-29
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-19
13:55
Akita Yupopo (Akita) Study of Via Hole on MMIC using Nickel Layer
Takahiro Tsushima, Masayuki Kimishima (AT Lab.) EMCJ2017-33 MW2017-85 EST2017-48
In MMIC (Microwave Monolithic Integrated Circuit) and PCB (Printed Circuit Board), nickel plating is widely used. Howeve... [more] EMCJ2017-33 MW2017-85 EST2017-48
pp.41-44
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