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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 35  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
AP
(2nd)
2023-12-07
14:15
Wakayama Kiboukan (Nanki Shirahama) Simple Measurement Method for Reflectarray Using Monostatic-Bistatic Equivalence Theorem
Keiji Swairi, Hiroshi Hashiguchi, Naobumi Michishita (National Defense Academy)
In fifth-generation mobile communications, coverage holes are concerned due to the use of millimeter-wave bands. Reflect... [more]
MIKA
(2nd)
2019-10-04
10:15
Hokkaido Hokkaido Univ. [Poster Presentation] MRCS evaluation of Van Atta array considering antenna coupling, imperfect matching, and transmission line length
Yu Inuzuka, Atsuhiro Nishikata (Tokyo Tech)
Van Atta array is a structure that realizes retroreflective properties. In order to design high performanceVanAttaarray, ... [more]
SDM, ICD, ITE-IST [detail] 2019-08-07
16:30
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Talk] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SGMONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics) SDM2019-39 ICD2019-4
Highly reliable Physical Unclonable Functions (PUF) based on 28nm Split-Gate MONOS (SG-MONOS) embedded flash memory is d... [more] SDM2019-39 ICD2019-4
pp.15-19
SDM 2018-10-17
16:05
Miyagi Niche, Tohoku Univ. Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] SDM2018-55
pp.15-19
AP
(2nd)
2018-06-29
11:10
Tokyo Jinbo-cho Takahashi Bldg. 7F Monostatic RCS Measurement of Metasurfaces Using Multi-Layer Ceramic Capacitors
Naoyuki Kinai, Naobumi Michishita, Hisashi Morishita (National Defense Academy), Teruki Miyazaki, Masato Tadokoro (The Yokohama Rubber Co., Ltd.)
To miniaturize the size of the unit cell structure for the metasurface, this paper presents the metasurface using multi-... [more]
SDM 2018-01-30
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) SDM2017-94
Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node em... [more] SDM2017-94
pp.13-16
SDM 2017-11-10
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges
Risho Koh, Mitsuru Miyamori, Katsumi Tsuneno, Tetsuya Muta, Yoshiyuki Kawashima (Renesas electronics) SDM2017-71
A SPICE-compatible model which reproduces the read current of split-gate MONOS (SG-MONOS) non-volatile memory cell has b... [more] SDM2017-71
pp.53-58
SDM 2017-10-25
15:20
Miyagi Niche, Tohoku Univ. Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] SDM2017-52
pp.15-19
SDM 2017-10-26
13:00
Miyagi Niche, Tohoku Univ. [Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics) SDM2017-58
Highly reliable Physical Unclonable Functions (PUF) based on 28nm Split-Gate MONOS (SG-MONOS) embedded flash memory is d... [more] SDM2017-58
pp.45-49
ICD 2017-04-20
14:55
Tokyo   [Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) ICD2017-7
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] ICD2017-7
pp.35-38
ICD 2017-04-20
15:20
Tokyo   [Invited Talk] Embedded Flash Technology for Automotive Applications
Masaya Nakano, Takashi Ito, Tadaaki Yamauchi, Yasuo Yamaguchi, Takashi Kono, Hideto Hidaka (Renesas Electronics) ICD2017-8
Higher fuel-efficient engine and advanced driver assistance system (ADAS) require the further progress of embedded Flash... [more] ICD2017-8
pp.39-44
SDM 2017-01-30
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) SDM2016-134
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] SDM2016-134
pp.17-20
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-18
15:35
Mie Iseshi Kanko Bunka Kaikan Tracking multiple pedestrians using an ultra-wideband Doppler radar with time-domain adaptive signal processing
Shigeaki Okumura (Kyoto Univ.), Takuya Sakamoto (Univ. of Hyogo/Kyoto Univ.), Toru Sato (Kyoto Univ.) PN2016-61 EMT2016-90 OPE2016-136 LQE2016-125 EST2016-100 MWP2016-74
Ultra-wideband Doppler radar with a high range resolution is promising tool for security and monitoring applications. To... [more] PN2016-61 EMT2016-90 OPE2016-136 LQE2016-125 EST2016-100 MWP2016-74
pp.115-120
SDM 2016-10-27
11:15
Miyagi Niche, Tohoku Univ. Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] SDM2016-76
pp.39-44
ICD 2016-04-15
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] A 90nm Embedded 1T-MONOS Flash Macro for Automotive Applications with 0.07mJ/8kB Rewrite Energy and Endurance Over 100M Cycles Under Tj of 175°C
Satoru Nakanishi, Hidenori Mitani, Ken Matsubara, Hiroshi Yoshida, Takashi Kono, Yasuhiko Taito, Takashi Ito, Takashi Kurafuji, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi (Renesas) ICD2016-15
A first-ever 90nm embedded 1T-MONOS Flash macro is presented to realize automotive reliability and simple process integr... [more] ICD2016-15
pp.77-81
SDM 2015-10-29
16:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba) SDM2015-75
Novel nonvolatile programmable switch for low-power and high-speed FPGA where flash memory is adjacently integrated to C... [more] SDM2015-75
pp.23-28
EMT, IEE-EMT 2015-10-29
14:15
Miyazaki Holiday Inn ANA Resort Miyazaki Dimension Estimation of Quadrangular Dielectric Cylinders from the Surface Scattering Value
Asuka Kisumi, Hiroshi Shirai (Chuo Univ.) EMT2015-64
A method to estimate the size of quadrangular dielectric cylinder has been proposed from the angular electromagnetic wav... [more] EMT2015-64
pp.103-107
ICD 2015-04-16
14:25
Nagano   [Invited Talk] A 28nm Embedded SG-MONOS Flash Macro for Automotive Achieving 200MHz Read Operation and 2.0MB/s Write Throughput at Tj of 170℃
Makoto Muneyasu, Yasuhiko Taito, Masaya Nakano, Takashi Ito, Takashi Kono, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi (Renesas) ICD2015-4
First-ever 28nm embedded SG-MONOS flash macros are presented to realize aggressive device scaling with improved reliabil... [more] ICD2015-4
pp.15-19
ICD, SDM 2014-08-05
11:15
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Low-Power and High-Speed Nonvolatile FPGA by Adjacent Integration of MONOS/Logic and Novel Programming Scheme
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinobu Fujita, Shinichi Yasuda (Toshiba) SDM2014-75 ICD2014-44
Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CM... [more] SDM2014-75 ICD2014-44
pp.71-76
SDM 2014-06-19
13:45
Aichi VBL, Nagoya Univ. Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2
Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] SDM2014-52
pp.49-53
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