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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech)  ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| SDM | 2022-11-10 15:15 |
Online | Online | [Invited Talk]
Simulation of CMOS circuit and single-electron transistors for readout of spin qubits Tetsufumi Tanamoto (Teikyo Univ.) SDM2022-68 |
In this study, we consider a scalable detection circuit theoretically based on the implementation of pairs of single-ele... [more] | SDM2022-68 pp.19-22 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 09:15 |
Online | [Invited Talk]
A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency Koichiro Zaitsu, Akira Matsumoto, Mizuki Nishida, Yusuke Tanaka, Hirofumi Yamashita, Yosuke Satake (Sony Semiconductor Solutions), Takashi Watanabe, Kunihiko Araki, Naoki Nei (Sony Semiconductor Manufacturing), Keiichi Nakazawa, Junpei Yamamoto, Mutsuo Uehara (Sony Semiconductor Solutions), Hiroyuki Kawashima, Yusaku Kobayashi (Sony Semiconductor Manufacturing), Tomoyuki Hirano, Keiji Tatani (Sony Semiconductor Solutions) SDM2022-33 ICD2022-1 |
(To be available after the conference date) [more] | SDM2022-33 ICD2022-1 pp.1-6 |
|
| RCS, SR, SRW (Joint) |
2022-03-03 13:25 |
Online | Online | [Invited Lecture]
Technology Trends of Millimeter-Wave CMOS Transceivers for 6G Kenichi Okada (Tokyo Tech) RCS2021-278 SR2021-105 SRW2021-78 |
The maximum operation frequency of CMOS transistor is increasing year by year, and now it can work at millimeter-wave ba... [more] | RCS2021-278 SR2021-105 SRW2021-78 p.140(RCS), p.98(SR), p.46(SRW) |
| MW, ED | 2021-01-29 13:00 |
Online | Online | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| MW (2nd) |
2020-05-13 - 2020-05-15 |
Overseas | CU, Bangkok, Thailand (Postponed) |
CMOS Vector-Sum Phase Shifter With Novel Vector Summer Takana Kaho (Shonan Inst. of Tech.), Kotaro Takamiya, Ramesh Pokharel Kumar (Kyushu University) |
A quasi-millimeter CMOS phase shifter which employed a vector sum structure is designed. It consists of an active balun,... [more] | |
| HWS, VLD [detail] | 2020-03-06 16:50 |
Okinawa | Okinawa Ken Seinen Kaikan (Cancelled but technical report was issued) |
Performance Evaluation of Echo State Networks with Hardware Reservoirs Yuki Kume, Song Bian, Kenta Nagura, Takashi Sato (Kyoto Univ.) VLD2019-136 HWS2019-109 |
Echo state Network (ESN), a class of recurrent neural network, is characteristic in its use of a reservoir having random... [more] | VLD2019-136 HWS2019-109 pp.245-250 |
| NLP, NC (Joint) |
2020-01-24 13:10 |
Okinawa | Miyakojima Marine Terminal | Optimization of CMOS operational amplifier using MOGA Hitoshi Kubo (Shizuoka Univ.), Hiroshi Ninomiya (Shonan Inst. of Tech.), Hideki Asai (Shizuoka Univ.) NLP2019-93 |
Multi-Objective Genetic Algorithm (MOGA) is an extended version of Genetic Algorithm (GA) for problems with multiple obj... [more] | NLP2019-93 pp.45-48 |
| SCE | 2020-01-17 13:15 |
Kanagawa | [Poster Presentation]
Study of low power consumption of adiabatic pass transistor decoder for Josephson-CMOS Hybrid Memories Yu Okamoto, Yuki Hironaka, Nobuyuki Yoshikawa (Yokohama Natl. Univ.) SCE2019-49 |
In recent years, superconducting circuits have attracted attention because of the limitation of CMOS circuit technology.... [more] | SCE2019-49 pp.79-81 |
|
| SDM, ED, CPM | 2019-05-16 15:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | [Invited Talk]
Electron Nano-Aspirator using Electron-Electron Scattering in Si Yukinori Ono (Shisuoka Univ.) ED2019-15 CPM2019-6 SDM2019-13 |
The electron nano-aspirator is a Si device with a T-shaped branch, and can enhance the MOS-transistor current without ex... [more] | ED2019-15 CPM2019-6 SDM2019-13 pp.25-28 |
| MW, ICD | 2019-03-14 15:15 |
Okinawa | A 10-MHz-Band Gate Zero-Bias Amplification/Rectification Module using Zero-Threshold Si MOS Transistor Takaharu Kume, Ishikawa Ryo, Kazuhiko Honjo (UEC) MW2018-165 ICD2018-109 |
A high-efficiency amplification/rectification module has been developed at 10-MHz band for bidirectional wireless power ... [more] | MW2018-165 ICD2018-109 pp.49-54 |
|
| SDM | 2019-01-29 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] | SDM2018-87 pp.27-30 |
| MW, ED | 2019-01-17 15:25 |
Tokyo | Hitachi, Central Research Lab. | ED2018-78 MW2018-145 |
(To be available after the conference date) [more] | ED2018-78 MW2018-145 pp.55-58 |
| ED, THz | 2018-12-18 11:35 |
Miyagi | RIEC, Tohoku Univ. | Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method Takafumi Ito, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-67 |
As a new film formation technology for semiconductor crystals in semiconductor device processes, we have proposed a simp... [more] | ED2018-67 pp.53-56 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 14:35 |
Hiroshima | Satellite Campus Hiroshima | An Efficient Multiplier Employing Time-Encoded Stochastic Computing Circuit Tati Erlina, Renyuan Zhang, Yasuhiko Nakashima (NAIST) CPSY2018-41 |
A compact multiplier circuit is designed by time-encoded stochastic computing technology. The operands of multiplication... [more] | CPSY2018-41 pp.47-52 |
| ED, LQE, CPM | 2018-11-29 14:15 |
Aichi | Nagoya Inst. tech. | Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] | ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
| SDM | 2018-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62 |
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] | SDM2018-62 pp.51-56 |
| ED, THz | 2017-12-18 14:30 |
Miyagi | RIEC, Tohoku Univ | Tribological formation of chalcogenide 2D layered semiconductor MoS2 thin films Takafuki Ito, Tadao Tanabe, Akinori Matsunaga, Yutaka Oyama (Tohoku Univ.) ED2017-75 |
We propose a novel fabrication process of 2D layered semiconductors by using tribochemical reaction. This study is focus... [more] | ED2017-75 pp.13-14 |
| ICD, CPSY, CAS | 2017-12-14 15:10 |
Okinawa | Art Hotel Ishigakijima | A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88 |
Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore powe... [more] | CAS2017-91 ICD2017-79 CPSY2017-88 p.127 |
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