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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 153  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-11-10
15:15
Online Online [Invited Talk] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits
Tetsufumi Tanamoto (Teikyo Univ.) SDM2022-68
In this study, we consider a scalable detection circuit theoretically based on the implementation of pairs of single-ele... [more] SDM2022-68
pp.19-22
ICD, SDM, ITE-IST [detail] 2022-08-08
09:15
Online   [Invited Talk] A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency
Koichiro Zaitsu, Akira Matsumoto, Mizuki Nishida, Yusuke Tanaka, Hirofumi Yamashita, Yosuke Satake (Sony Semiconductor Solutions), Takashi Watanabe, Kunihiko Araki, Naoki Nei (Sony Semiconductor Manufacturing), Keiichi Nakazawa, Junpei Yamamoto, Mutsuo Uehara (Sony Semiconductor Solutions), Hiroyuki Kawashima, Yusaku Kobayashi (Sony Semiconductor Manufacturing), Tomoyuki Hirano, Keiji Tatani (Sony Semiconductor Solutions) SDM2022-33 ICD2022-1
(To be available after the conference date) [more] SDM2022-33 ICD2022-1
pp.1-6
RCS, SR, SRW
(Joint)
2022-03-03
13:25
Online Online [Invited Lecture] Technology Trends of Millimeter-Wave CMOS Transceivers for 6G
Kenichi Okada (Tokyo Tech) RCS2021-278 SR2021-105 SRW2021-78
The maximum operation frequency of CMOS transistor is increasing year by year, and now it can work at millimeter-wave ba... [more] RCS2021-278 SR2021-105 SRW2021-78
p.140(RCS), p.98(SR), p.46(SRW)
MW, ED 2021-01-29
13:00
Online Online DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs
Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] ED2020-31 MW2020-84
pp.22-25
MW, ED 2021-01-29
13:50
Online Online High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs
Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] ED2020-33 MW2020-86
pp.30-33
MW
(2nd)
2020-05-13
- 2020-05-15
Overseas CU, Bangkok, Thailand
(Postponed)
CMOS Vector-Sum Phase Shifter With Novel Vector Summer
Takana Kaho (Shonan Inst. of Tech.), Kotaro Takamiya, Ramesh Pokharel Kumar (Kyushu University)
A quasi-millimeter CMOS phase shifter which employed a vector sum structure is designed. It consists of an active balun,... [more]
HWS, VLD [detail] 2020-03-06
16:50
Okinawa Okinawa Ken Seinen Kaikan
(Cancelled but technical report was issued)
Performance Evaluation of Echo State Networks with Hardware Reservoirs
Yuki Kume, Song Bian, Kenta Nagura, Takashi Sato (Kyoto Univ.) VLD2019-136 HWS2019-109
Echo state Network (ESN), a class of recurrent neural network, is characteristic in its use of a reservoir having random... [more] VLD2019-136 HWS2019-109
pp.245-250
NLP, NC
(Joint)
2020-01-24
13:10
Okinawa Miyakojima Marine Terminal Optimization of CMOS operational amplifier using MOGA
Hitoshi Kubo (Shizuoka Univ.), Hiroshi Ninomiya (Shonan Inst. of Tech.), Hideki Asai (Shizuoka Univ.) NLP2019-93
Multi-Objective Genetic Algorithm (MOGA) is an extended version of Genetic Algorithm (GA) for problems with multiple obj... [more] NLP2019-93
pp.45-48
SCE 2020-01-17
13:15
Kanagawa   [Poster Presentation] Study of low power consumption of adiabatic pass transistor decoder for Josephson-CMOS Hybrid Memories
Yu Okamoto, Yuki Hironaka, Nobuyuki Yoshikawa (Yokohama Natl. Univ.) SCE2019-49
In recent years, superconducting circuits have attracted attention because of the limitation of CMOS circuit technology.... [more] SCE2019-49
pp.79-81
SDM, ED, CPM 2019-05-16
15:25
Shizuoka Shizuoka Univ. (Hamamatsu) [Invited Talk] Electron Nano-Aspirator using Electron-Electron Scattering in Si
Yukinori Ono (Shisuoka Univ.) ED2019-15 CPM2019-6 SDM2019-13
The electron nano-aspirator is a Si device with a T-shaped branch, and can enhance the MOS-transistor current without ex... [more] ED2019-15 CPM2019-6 SDM2019-13
pp.25-28
MW, ICD 2019-03-14
15:15
Okinawa   A 10-MHz-Band Gate Zero-Bias Amplification/Rectification Module using Zero-Threshold Si MOS Transistor
Takaharu Kume, Ishikawa Ryo, Kazuhiko Honjo (UEC) MW2018-165 ICD2018-109
A high-efficiency amplification/rectification module has been developed at 10-MHz band for bidirectional wireless power ... [more] MW2018-165 ICD2018-109
pp.49-54
SDM 2019-01-29
13:45
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure
Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] SDM2018-87
pp.27-30
MW, ED 2019-01-17
15:25
Tokyo Hitachi, Central Research Lab. ED2018-78 MW2018-145 (To be available after the conference date) [more] ED2018-78 MW2018-145
pp.55-58
ED, THz 2018-12-18
11:35
Miyagi RIEC, Tohoku Univ. Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method
Takafumi Ito, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-67
As a new film formation technology for semiconductor crystals in semiconductor device processes, we have proposed a simp... [more] ED2018-67
pp.53-56
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
14:35
Hiroshima Satellite Campus Hiroshima An Efficient Multiplier Employing Time-Encoded Stochastic Computing Circuit
Tati Erlina, Renyuan Zhang, Yasuhiko Nakashima (NAIST) CPSY2018-41
A compact multiplier circuit is designed by time-encoded stochastic computing technology. The operands of multiplication... [more] CPSY2018-41
pp.47-52
ED, LQE, CPM 2018-11-29
14:15
Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
pp.13-16
SDM 2018-10-18
14:00
Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
ED, THz 2017-12-18
14:30
Miyagi RIEC, Tohoku Univ Tribological formation of chalcogenide 2D layered semiconductor MoS2 thin films
Takafuki Ito, Tadao Tanabe, Akinori Matsunaga, Yutaka Oyama (Tohoku Univ.) ED2017-75
We propose a novel fabrication process of 2D layered semiconductors by using tribochemical reaction. This study is focus... [more] ED2017-75
pp.13-14
ICD, CPSY, CAS 2017-12-14
15:10
Okinawa Art Hotel Ishigakijima A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting
Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88
Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore powe... [more] CAS2017-91 ICD2017-79 CPSY2017-88
p.127
ICD, CPSY, CAS 2017-12-15
09:50
Okinawa Art Hotel Ishigakijima A 60GHz Integrated Antenna Switch for TDD Transceivers in 65nm CMOS
Korkut Kaan Tokgoz, Seitaro Kawai, Kenichi Okada, Akira Matsuzawa (Tokyo Tech.) CAS2017-102 ICD2017-90 CPSY2017-99
In this work, an integrated antenna switching architecture is presented for time-division-duplex millimeter-wave transce... [more] CAS2017-102 ICD2017-90 CPSY2017-99
pp.151-153
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