Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-01-31 13:05 |
Tokyo |
KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75 |
Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] |
SDM2023-75 pp.5-8 |
NLP |
2023-11-28 10:25 |
Okinawa |
Nago city commerce and industry association |
Yusuke Goto (Chukyo Univ.), Hiroyuki Asahara (Okayama Univ. of Science), Takuji Kousaka (Chukyo Univ.), Daisuke Ito (Gifu Univ.) NLP2023-60 |
(To be available after the conference date) [more] |
NLP2023-60 pp.7-10 |
SDM |
2023-10-13 15:10 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform Takezo Mawaki, Rihito Kuroda (Tohoku Univ.) SDM2023-57 |
We refer to the overall measurement system composed of array test circuits and other equipment as the electrical charact... [more] |
SDM2023-57 pp.21-26 |
SDM |
2023-10-13 16:40 |
Miyagi |
Niche, Tohoku Univ. |
Formation process of GaN MOS interface suppressing interfacial oxidation Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) SDM2023-60 |
In this paper, we report the effects of MOS interfacial oxidation on electrical properties of GaN MOSFET and show improv... [more] |
SDM2023-60 pp.40-45 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 16:35 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] |
SDM2023-42 ICD2023-21 pp.32-35 |
SDM, ICD, ITE-IST [detail] |
2023-08-02 14:45 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Multi-Output MOSFET for Standard Sensor/Circuit Design Platform Device Tomochika Harada (Yamagata University) SDM2023-47 ICD2023-26 |
This paper presents the multi-output MOSFET for a standard sensor/circuit design platform. Multi-output MOSFET has two s... [more] |
SDM2023-47 ICD2023-26 pp.56-59 |
SDM |
2023-06-26 10:10 |
Hiroshima |
Hiroshima Univ. (Res. Inst. of Nanodevices) |
[Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo) SDM2023-27 |
Nano-sheet channel has been recently adopted in logic CMOS as the next-generation channel for FinFET because the nano-sh... [more] |
SDM2023-27 pp.1-4 |
SDM |
2023-01-30 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
[Invited Talk]
Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off Shunsuke Asaba, Masaru Furukawa, Yuji Kusumoto (Toshiba D&S), Ryosuke Iijima (Toshiba), Hiroshi Kono (Toshiba D&S) SDM2022-82 |
Degradation in performance due to the bipolar current through parasitic diode during reverse operation of SiC-MOSFET can... [more] |
SDM2022-82 pp.13-16 |
EE |
2023-01-20 11:25 |
Fukuoka |
Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system Yandagkhuu Bayarsaikhan, Ichiro Omura (KIT) EE2022-46 |
As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devi... [more] |
EE2022-46 pp.111-116 |
SDM |
2022-11-10 11:00 |
Online |
Online |
[Invited Talk]
Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2022-65 |
Extremely-thin-body (ETB) channels are regarded as the most promising channel structure for future CMOS technology nodes... [more] |
SDM2022-65 pp.7-12 |
SDM |
2022-11-11 14:00 |
Online |
Online |
[Invited Talk]
Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.) SDM2022-75 |
In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wi... [more] |
SDM2022-75 pp.50-54 |
SDM |
2022-11-11 15:15 |
Online |
Online |
[Invited Talk]
Reliable design of SiC Power Modules
-- An Experimental Characterization for Aging Prediction -- Shuhei Fukunaga (Osaka Univ.), Alberto Castellazzi (KUAS), Tsuyoshi Funaki (Osaka Univ.) SDM2022-76 |
This research aims to develop the reliable design of multi-chip power modules with SiC MOSFETs for high-voltage power co... [more] |
SDM2022-76 pp.55-60 |
SDM |
2022-10-19 16:30 |
Online |
Online |
[Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62 |
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] |
SDM2022-62 pp.34-37 |
ICD, SDM, ITE-IST [detail] |
2022-08-09 11:05 |
Online |
|
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] |
SDM2022-46 ICD2022-14 pp.54-59 |
SDM |
2022-06-21 13:00 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] |
SDM2022-24 pp.1-4 |
CCS, NLP |
2022-06-10 09:00 |
Osaka |
(Primary: On-site, Secondary: Online) |
Yusuke Goto (Chukyo Univ.), Hiroyuki Asahara (Okayama Univ. of Science), Takuji Kousaka (Chukyo Univ.), Daisuke Ito (Gifu Univ.) NLP2022-12 CCS2022-12 |
[more] |
NLP2022-12 CCS2022-12 pp.58-61 |
CPM |
2022-03-01 15:55 |
Online |
Online |
An Indirect Measurement of the Current through the Inverter Circuit using Multi-Output MOSFET Keito Yamaguchi, Shinya Suzuki, Kota Oikawa, Tomochika Harada (Yamagata Univ) CPM2021-81 |
In this study, we verified the possibility of indirectly measuring the through-current flowing during drive using an inv... [more] |
CPM2021-81 pp.36-39 |
SDM |
2022-01-31 15:00 |
Online |
Online |
[Invited Talk]
**** Kei Sumita, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2021-71 |
Mobility reduction due to surface roughness scattering is a critical concern for Extremely-Thin-Body (ETB) nanosheet cha... [more] |
SDM2021-71 pp.12-15 |
SDM |
2021-11-11 16:15 |
Online |
Online |
A threshold voltage definition based on a standardized charge vs. voltage relationship Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2021-58 |
Threshold voltage defined by a band bending of twice the substrate intrinsic-to-Fermi level difference has been widely a... [more] |
SDM2021-58 pp.29-32 |
SDM |
2021-11-12 09:30 |
Online |
Online |
[Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60 |
SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] |
SDM2021-60 pp.38-42 |