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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
13:05
Shizuoka   AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] ED2023-14 CPM2023-56 LQE2023-54
pp.1-5
ED, CPM, LQE 2021-11-26
14:55
Online Online High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] ED2021-32 CPM2021-66 LQE2021-44
pp.79-82
LQE, CPM, ED 2020-11-26
13:30
Online Online High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] ED2020-7 CPM2020-28 LQE2020-58
pp.25-28
CPM 2020-10-29
14:30
Online Online Growth of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates
Houyao Xue, Koki Shiraishi, Yosuke Izuka, Shingo Taniguchi, Sora Saito, Tsubasa Saito, Yuichi Sato (Akita Univ) CPM2020-15
InN nanopillar-crystals were formed using multi-crystalline Si, which is widely used for low-cost solar cell formation, ... [more] CPM2020-15
pp.15-18
LQE, ED, CPM 2008-11-27
10:55
Aichi Nagoya Institute of Technology Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates
Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) ED2008-155 CPM2008-104 LQE2008-99
We have succeeded in epitaxial growth of high-quality nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates using r... [more] ED2008-155 CPM2008-104 LQE2008-99
pp.17-20
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