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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2023-02-28 14:45 |
Tokyo | Tokyo University of Technology (Primary: On-site, Secondary: Online) |
RF-Induced Current in Networks of Gold Nanoparticles with Two Different Diameters Yuki Hayashi, Kaito Kobayashi, Kento Fujikura, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo)  CPM2022-101 |
In this study, an asymmetric single-electron transistor was fabricated by dielectrophoresis placing of gold nanoparticle... [more] | CPM2022-101 pp.58-61 |
| CPM | 2022-03-01 15:25 |
Online | Online | Electrical characteristics of single electron transistors fabricated by two-step immersion in gold colloidal solution Kaito Kobayashi, Kenta Fujikura, Tetsuya Urae, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (UEC) CPM2021-79 |
In this research, we aimed to realize a 6-terminal single-electron device using gold nanoparticles as island electrodes.... [more] | CPM2021-79 pp.28-30 |
| ED, SDM, CPM | 2021-05-27 15:40 |
Online | Online | Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17 |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] | ED2021-6 CPM2021-6 SDM2021-17 pp.23-26 |
| CPM | 2021-03-03 14:00 |
Online | Online | Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70 |
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] | CPM2020-70 pp.55-58 |
| OME | 2019-12-20 13:00 |
Saga | avancée (Saga city) | Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes Rikiya Irie, Chun Ouyang, Yuma Ito, Phan Trong Tue (Tokyo Tech), Hayato Tsuji (Kanagawa Unib), Eiichi Nakamura (Univ. Tokyo), Yutaka Majima (Tokyo Tech) OME2019-37 |
Molecular transistors have been studied for 50 years, however electrical contacts to a single-molecule have been the iss... [more] | OME2019-37 pp.9-12 |
| ED, SDM | 2018-02-28 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104 |
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] | ED2017-104 SDM2017-104 pp.1-6 |
| ED, SDM | 2018-02-28 10:25 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Numerical Simulation on Single-Electron Effects in Random Arrays of Small Tunnel Junctions Yoshinao Mizugaki, Masataka Moriya, Hiroshi Shimada, Kazuhiko Matsumoto, Makoto Moribayashi, Tomoki Yagai (UEC Tokyo), Yasuo Kimura (Tokyo Univ. Tech.), Ayumi Hirano-Iwata (Tohoku Univ.), Fumihiko Hirose (Yamagata Univ.) ED2017-105 SDM2017-105 |
We have worked on single-electron devices comprising random arrays of gold nanoparticles, which are fabricated using dis... [more] | ED2017-105 SDM2017-105 pp.7-10 |
| ED, SDM | 2017-02-24 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 |
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] | ED2016-130 SDM2016-147 pp.1-6 |
| SDM, ED | 2015-02-05 15:05 |
Hokkaido | Hokkaido Univ. | Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] | ED2014-141 SDM2014-150 pp.17-22 |
| ED, SDM | 2014-02-28 12:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] | ED2013-149 SDM2013-164 pp.95-100 |
| SDM, ED | 2013-02-28 09:50 |
Hokkaido | Hokkaido Univ. | Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168 |
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] | ED2012-139 SDM2012-168 pp.59-64 |
| ED, SDM | 2012-02-07 15:15 |
Hokkaido | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] | ED2011-145 SDM2011-162 pp.19-24 |
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| SDM, CPM, ED | 2010-05-13 14:45 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Theoretical study on novel Si single-electron refrigerator Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2010-20 CPM2010-10 SDM2010-20 |
We have proposed a novel single-electron-refrigerator (SER) device which can be fabricated in Si-on-insulator wafers and... [more] | ED2010-20 CPM2010-10 SDM2010-20 pp.17-21 |
| ED, SDM | 2010-02-22 14:15 |
Okinawa | Okinawaken-Seinen-Kaikan | Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.) ED2009-199 SDM2009-196 |
Stochastic resonance (SR) in single-electron charging and discharging process on quantum dots (QDs) is demonstrated theo... [more] | ED2009-199 SDM2009-196 pp.17-21 |
| ED, SDM | 2010-02-22 15:40 |
Okinawa | Okinawaken-Seinen-Kaikan | Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] | ED2009-202 SDM2009-199 pp.35-39 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78 |
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] | ED2009-83 SDM2009-78 pp.145-148 |
| SDM, ED | 2009-02-26 16:05 |
Hokkaido | Hokkaido Univ. | Characteristics of Single Electron Transistor and Turnstile with Input Discretizer Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) ED2008-229 SDM2008-221 |
In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small t... [more] | ED2008-229 SDM2008-221 pp.29-34 |
| SDM, ED | 2009-02-27 09:00 |
Hokkaido | Hokkaido Univ. | Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] | ED2008-232 SDM2008-224 pp.47-52 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
Si single-electron FETs for single-photon detection Michiharu Tabe, Ratno Nuryadi, Zainal Burhanudin (Shizuoka Univ.) |
We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfe... [more] | |
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