Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2023-02-28 14:45 |
Tokyo |
Tokyo University of Technology (Primary: On-site, Secondary: Online) |
RF-Induced Current in Networks of Gold Nanoparticles with Two Different Diameters Yuki Hayashi, Kaito Kobayashi, Kento Fujikura, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) CPM2022-101 |
In this study, an asymmetric single-electron transistor was fabricated by dielectrophoresis placing of gold nanoparticle... [more] |
CPM2022-101 pp.58-61 |
SDM |
2022-11-10 15:15 |
Online |
Online |
[Invited Talk]
Simulation of CMOS circuit and single-electron transistors for readout of spin qubits Tetsufumi Tanamoto (Teikyo Univ.) SDM2022-68 |
In this study, we consider a scalable detection circuit theoretically based on the implementation of pairs of single-ele... [more] |
SDM2022-68 pp.19-22 |
CPM |
2022-03-01 15:25 |
Online |
Online |
Electrical characteristics of single electron transistors fabricated by two-step immersion in gold colloidal solution Kaito Kobayashi, Kenta Fujikura, Tetsuya Urae, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (UEC) CPM2021-79 |
In this research, we aimed to realize a 6-terminal single-electron device using gold nanoparticles as island electrodes.... [more] |
CPM2021-79 pp.28-30 |
CPM |
2021-03-03 14:00 |
Online |
Online |
Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70 |
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] |
CPM2020-70 pp.55-58 |
OME |
2019-12-20 13:00 |
Saga |
avancée (Saga city) |
Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes Rikiya Irie, Chun Ouyang, Yuma Ito, Phan Trong Tue (Tokyo Tech), Hayato Tsuji (Kanagawa Unib), Eiichi Nakamura (Univ. Tokyo), Yutaka Majima (Tokyo Tech) OME2019-37 |
Molecular transistors have been studied for 50 years, however electrical contacts to a single-molecule have been the iss... [more] |
OME2019-37 pp.9-12 |
ED, SDM |
2018-02-28 10:00 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104 |
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] |
ED2017-104 SDM2017-104 pp.1-6 |
ED |
2017-04-21 10:55 |
Miyagi |
|
Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads Yoshinao Mizugaki, Masashi Takiguchi, Nobuyuki Tamura, Hiroshi Shimada (UEC Tokyo) ED2017-13 |
We report electric and magnetic field responses of single-electron transistors (SETs) comprising ferromagnetic lead elec... [more] |
ED2017-13 pp.47-50 |
ED, SDM |
2014-02-28 12:05 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] |
ED2013-149 SDM2013-164 pp.95-100 |
SDM, ED |
2013-02-28 09:00 |
Hokkaido |
Hokkaido Univ. |
Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] |
ED2012-137 SDM2012-166 pp.47-52 |
SDM, ED |
2013-02-28 09:50 |
Hokkaido |
Hokkaido Univ. |
Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168 |
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] |
ED2012-139 SDM2012-168 pp.59-64 |
ED, SDM |
2012-02-07 14:35 |
Hokkaido |
|
KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161 |
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] |
ED2011-144 SDM2011-161 pp.13-18 |
ED, SDM |
2012-02-07 15:15 |
Hokkaido |
|
High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] |
ED2011-145 SDM2011-162 pp.19-24 |
ED, SDM |
2012-02-08 09:55 |
Hokkaido |
|
Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168 |
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] |
ED2011-151 SDM2011-168 pp.53-58 |
SDM, ED |
2011-02-24 10:45 |
Hokkaido |
Hokkaido Univ. |
Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238 |
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] |
ED2010-203 SDM2010-238 pp.63-66 |
ED, SDM |
2010-02-22 15:40 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] |
ED2009-202 SDM2009-199 pp.35-39 |
ED, SDM |
2010-02-22 16:30 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2009-204 SDM2009-201 |
We report our experimental results on the magneto-resistance ratio ($MRR$) of single-electron
transistors (SETs)
wit... [more] |
ED2009-204 SDM2009-201 pp.47-52 |
SDM, ED |
2009-06-26 12:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89 |
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] |
ED2009-94 SDM2009-89 pp.189-192 |
SDM, ED |
2009-02-26 16:05 |
Hokkaido |
Hokkaido Univ. |
Characteristics of Single Electron Transistor and Turnstile with Input Discretizer Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) ED2008-229 SDM2008-221 |
In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small t... [more] |
ED2008-229 SDM2008-221 pp.29-34 |
SDM, ED |
2009-02-27 09:00 |
Hokkaido |
Hokkaido Univ. |
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] |
ED2008-232 SDM2008-224 pp.47-52 |
ED, SDM |
2008-01-30 14:45 |
Hokkaido |
|
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] |
ED2007-240 SDM2007-251 pp.17-22 |