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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 26  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2023-02-28
14:45
Tokyo Tokyo University of Technology
(Primary: On-site, Secondary: Online)
RF-Induced Current in Networks of Gold Nanoparticles with Two Different Diameters
Yuki Hayashi, Kaito Kobayashi, Kento Fujikura, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) CPM2022-101
In this study, an asymmetric single-electron transistor was fabricated by dielectrophoresis placing of gold nanoparticle... [more] CPM2022-101
pp.58-61
SDM 2022-11-10
15:15
Online Online [Invited Talk] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits
Tetsufumi Tanamoto (Teikyo Univ.) SDM2022-68
In this study, we consider a scalable detection circuit theoretically based on the implementation of pairs of single-ele... [more] SDM2022-68
pp.19-22
CPM 2022-03-01
15:25
Online Online Electrical characteristics of single electron transistors fabricated by two-step immersion in gold colloidal solution
Kaito Kobayashi, Kenta Fujikura, Tetsuya Urae, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (UEC) CPM2021-79
In this research, we aimed to realize a 6-terminal single-electron device using gold nanoparticles as island electrodes.... [more] CPM2021-79
pp.28-30
CPM 2021-03-03
14:00
Online Online Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets
Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] CPM2020-70
pp.55-58
OME 2019-12-20
13:00
Saga avancée (Saga city) Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes
Rikiya Irie, Chun Ouyang, Yuma Ito, Phan Trong Tue (Tokyo Tech), Hayato Tsuji (Kanagawa Unib), Eiichi Nakamura (Univ. Tokyo), Yutaka Majima (Tokyo Tech) OME2019-37
Molecular transistors have been studied for 50 years, however electrical contacts to a single-molecule have been the iss... [more] OME2019-37
pp.9-12
ED, SDM 2018-02-28
10:00
Hokkaido Centennial Hall, Hokkaido Univ. Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films
Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] ED2017-104 SDM2017-104
pp.1-6
ED 2017-04-21
10:55
Miyagi   Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads
Yoshinao Mizugaki, Masashi Takiguchi, Nobuyuki Tamura, Hiroshi Shimada (UEC Tokyo) ED2017-13
We report electric and magnetic field responses of single-electron transistors (SETs) comprising ferromagnetic lead elec... [more] ED2017-13
pp.47-50
ED, SDM 2014-02-28
12:05
Hokkaido Hokkaido Univ. Centennial Hall Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration
Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] ED2013-149 SDM2013-164
pp.95-100
SDM, ED 2013-02-28
09:00
Hokkaido Hokkaido Univ. Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature
Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] ED2012-137 SDM2012-166
pp.47-52
SDM, ED 2013-02-28
09:50
Hokkaido Hokkaido Univ. Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices
Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] ED2012-139 SDM2012-168
pp.59-64
ED, SDM 2012-02-07
14:35
Hokkaido   KFM observation of individual dopant potentials and electron charging
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] ED2011-144 SDM2011-161
pp.13-18
ED, SDM 2012-02-07
15:15
Hokkaido   High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] ED2011-145 SDM2011-162
pp.19-24
ED, SDM 2012-02-08
09:55
Hokkaido   Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration
Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] ED2011-151 SDM2011-168
pp.53-58
SDM, ED 2011-02-24
10:45
Hokkaido Hokkaido Univ. Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation
Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] ED2010-203 SDM2010-238
pp.63-66
ED, SDM 2010-02-22
15:40
Okinawa Okinawaken-Seinen-Kaikan Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration
Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] ED2009-202 SDM2009-199
pp.35-39
ED, SDM 2010-02-22
16:30
Okinawa Okinawaken-Seinen-Kaikan Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes
Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2009-204 SDM2009-201
We report our experimental results on the magneto-resistance ratio ($MRR$) of single-electron
transistors (SETs)
wit... [more]
ED2009-204 SDM2009-201
pp.47-52
SDM, ED 2009-06-26
12:00
Overseas Haeundae Grand Hotel, Busan, Korea Fabrication of double-dot single-electron transistor in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] ED2009-94 SDM2009-89
pp.189-192
SDM, ED 2009-02-26
16:05
Hokkaido Hokkaido Univ. Characteristics of Single Electron Transistor and Turnstile with Input Discretizer
Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) ED2008-229 SDM2008-221
In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small t... [more] ED2008-229 SDM2008-221
pp.29-34
SDM, ED 2009-02-27
09:00
Hokkaido Hokkaido Univ. Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration
Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] ED2008-232 SDM2008-224
pp.47-52
ED, SDM 2008-01-30
14:45
Hokkaido   Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer
Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] ED2007-240 SDM2007-251
pp.17-22
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