Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25 13:50 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Dynamic scattering mode LCDs with light-driven transmittance adjustablility Mitsuhiro Akimoto (Sanyo-Onoda City Univ.), Eriko Fukuda (Kyushu Sangyo Univ) EID2023-10 |
Dynamic scattering mode liquid crystal displays have excellent light scattering characteristics, but their drawback is h... [more] |
EID2023-10 pp.33-36 |
AP, WPT (Joint) |
2022-01-21 11:15 |
Tottori |
Kenmin-Fureai-Kaikan (Primary: On-site, Secondary: Online) |
Cut-off Phenomenon Observed in Parallel Combining RF Diode Rectifiers Ryoya Honda, Shinji Abe, Takashi Ohira (TUT) WPT2021-18 |
We investigated the behavior of a radio frequency (RF) rectifier array receiving unequal levels of RF power. To consider... [more] |
WPT2021-18 pp.13-16 |
ED, THz |
2021-12-21 10:20 |
Miyagi |
(Primary: On-site, Secondary: Online) |
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57 |
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] |
ED2021-57 pp.44-47 |
ED, MW |
2020-01-31 16:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] |
ED2019-105 MW2019-139 pp.59-64 |
ED, THz [detail] |
2019-12-23 16:45 |
Miyagi |
|
GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] |
ED2019-83 pp.29-32 |
EE, IEE-HCA |
2019-05-16 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Digital Control of LLC Converter
-- Consideration of Frequency Resolution and AD Conversion Resolution -- Hironori Takemoto, Terukazu Sato (Oita Univ.) EE2019-1 |
In this research, the sufficient resolution of frequency and AD conversion of the micro control unit that is used in the... [more] |
EE2019-1 pp.1-5 |
ED, THz |
2018-12-18 09:00 |
Miyagi |
RIEC, Tohoku Univ. |
[Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] |
ED2018-62 pp.35-38 |
ED, THz |
2017-12-19 09:00 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81 |
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] |
ED2017-81 pp.33-36 |
ED, THz |
2017-12-19 09:40 |
Miyagi |
RIEC, Tohoku Univ |
Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] |
ED2017-82 pp.37-40 |
ED |
2016-12-19 14:40 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] |
ED2016-81 pp.7-12 |
ED |
2016-01-20 15:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118 |
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] |
ED2015-118 pp.37-41 |
ED |
2015-12-21 13:45 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] |
ED2015-92 pp.7-11 |
ED |
2014-12-22 15:00 |
Miyagi |
|
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] |
ED2014-102 pp.21-26 |
US |
2014-10-22 13:25 |
Shizuoka |
Shizuoka Univ., Hamamatsu Campus |
Effect of non-plane sound wave in ear canal on ultrasonic exposure Shotaro Asakura, Hideyuki Nomura, Tomoo Kamakura (UEC) US2014-50 |
Acoustic properties in ear canal models were measured to consider mechanical effects of ultrasound to the eardrum for th... [more] |
US2014-50 pp.7-12 |
ED |
2013-12-16 13:55 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92 |
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] |
ED2013-92 pp.13-17 |
PN, EMT, LQE, OPE, MWP, EST, IEE-EMT [detail] |
2013-01-24 13:25 |
Osaka |
Osaka Univ. (Suita) |
Design of Microstrip Bandpass Filters with Multiple Transmission Zeros By Combining Compact Lowpass and Highpass Filters Ryosuke Akimoto, Zhewang Ma, Masataka Ohira (Saitama Univ), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ) PN2012-41 OPE2012-150 LQE2012-142 EST2012-77 MWP2012-59 |
In this paper, we design microstrip bandpass filters (BPFs) with multiple transmission zeros by combining compact lowpas... [more] |
PN2012-41 OPE2012-150 LQE2012-142 EST2012-77 MWP2012-59 pp.65-72 |
ED |
2012-12-17 13:00 |
Miyagi |
Tohoku University |
DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] |
ED2012-93 pp.1-6 |
MW |
2012-10-18 11:35 |
Tochigi |
Utsunomiya Univ. |
Design of Highpass Filters Consisting of Parallel-Connected Microstrip Transmission Line and Coupled-Lines Ryosuke Akimoto, Zhewang Ma, Masataka Ohira (Saitama Univ.) MW2012-88 |
In this paper, a highpass filter consisting of parallel-connected microstrip transmission line and coupled-lines is ana... [more] |
MW2012-88 pp.41-46 |
EMD |
2012-03-02 16:00 |
Tokyo |
Tanagawa Univ. |
Development of Low-Pass-Filter with Voltage Variable Cutoff Frequency Goh Kobayashi, Yoshiki Kayano, Hiroshi Inoue (Akita Univ.) EMD2011-138 |
A wideband variable frequency oscillator (Voltage Controlled Oscillator) can be used in the area of signal processing. T... [more] |
EMD2011-138 pp.49-52 |
MW |
2011-11-24 14:00 |
Okinawa |
|
Frequencey dependence measurement of complex permittivity of quartz glass plates in 40 to 80GHz band Daisuke Komata, Masato Nakamura, Takashi Shimizu, Yoshinori Kogami (Utsunomiya Univ.) MW2011-114 |
Quartz glass is widely used as a substrate materials for microwave and millimeter wave circuits because it has low loss ... [more] |
MW2011-114 pp.5-8 |