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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 34  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
AP, WPT
(Joint)
2022-01-21
11:15
Tottori Kenmin-Fureai-Kaikan
(Primary: On-site, Secondary: Online)
Cut-off Phenomenon Observed in Parallel Combining RF Diode Rectifiers
Ryoya Honda, Shinji Abe, Takashi Ohira (TUT) WPT2021-18
We investigated the behavior of a radio frequency (RF) rectifier array receiving unequal levels of RF power. To consider... [more] WPT2021-18
pp.13-16
ED, THz 2021-12-21
10:20
Miyagi
(Primary: On-site, Secondary: Online)
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures
Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] ED2021-57
pp.44-47
ED, MW 2020-01-31
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] ED2019-105 MW2019-139
pp.59-64
ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
EE, IEE-HCA 2019-05-16
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Digital Control of LLC Converter -- Consideration of Frequency Resolution and AD Conversion Resolution --
Hironori Takemoto, Terukazu Sato (Oita Univ.) EE2019-1
In this research, the sufficient resolution of frequency and AD conversion of the micro control unit that is used in the... [more] EE2019-1
pp.1-5
ED, THz 2018-12-18
09:00
Miyagi RIEC, Tohoku Univ. [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] ED2018-62
pp.35-38
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
ED, THz 2017-12-19
09:40
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2016-01-20
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] ED2015-118
pp.37-41
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
ED 2014-12-22
15:00
Miyagi   Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] ED2014-102
pp.21-26
US 2014-10-22
13:25
Shizuoka Shizuoka Univ., Hamamatsu Campus Effect of non-plane sound wave in ear canal on ultrasonic exposure
Shotaro Asakura, Hideyuki Nomura, Tomoo Kamakura (UEC) US2014-50
Acoustic properties in ear canal models were measured to consider mechanical effects of ultrasound to the eardrum for th... [more] US2014-50
pp.7-12
ED 2013-12-16
13:55
Miyagi Research Institute of Electrical Communication Tohoku University Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] ED2013-92
pp.13-17
PN, EMT, LQE, OPE, MWP, EST, IEE-EMT [detail] 2013-01-24
13:25
Osaka Osaka Univ. (Suita) Design of Microstrip Bandpass Filters with Multiple Transmission Zeros By Combining Compact Lowpass and Highpass Filters
Ryosuke Akimoto, Zhewang Ma, Masataka Ohira (Saitama Univ), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ) PN2012-41 OPE2012-150 LQE2012-142 EST2012-77 MWP2012-59
In this paper, we design microstrip bandpass filters (BPFs) with multiple transmission zeros by combining compact lowpas... [more] PN2012-41 OPE2012-150 LQE2012-142 EST2012-77 MWP2012-59
pp.65-72
ED 2012-12-17
13:00
Miyagi Tohoku University DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] ED2012-93
pp.1-6
MW 2012-10-18
11:35
Tochigi Utsunomiya Univ. Design of Highpass Filters Consisting of Parallel-Connected Microstrip Transmission Line and Coupled-Lines
Ryosuke Akimoto, Zhewang Ma, Masataka Ohira (Saitama Univ.) MW2012-88
In this paper, a highpass filter consisting of parallel-connected microstrip transmission line and coupled-lines is ana... [more] MW2012-88
pp.41-46
EMD 2012-03-02
16:00
Tokyo Tanagawa Univ. Development of Low-Pass-Filter with Voltage Variable Cutoff Frequency
Goh Kobayashi, Yoshiki Kayano, Hiroshi Inoue (Akita Univ.) EMD2011-138
A wideband variable frequency oscillator (Voltage Controlled Oscillator) can be used in the area of signal processing. T... [more] EMD2011-138
pp.49-52
MW 2011-11-24
14:00
Okinawa   Frequencey dependence measurement of complex permittivity of quartz glass plates in 40 to 80GHz band
Daisuke Komata, Masato Nakamura, Takashi Shimizu, Yoshinori Kogami (Utsunomiya Univ.) MW2011-114
Quartz glass is widely used as a substrate materials for microwave and millimeter wave circuits because it has low loss ... [more] MW2011-114
pp.5-8
MW 2011-10-21
11:20
Tokyo The University of Electro-Communications Miniaturization of Cutoff Waveguide Filter Using Planar Resonators with Transmission Zeros
Takaaki Matsumoto, Masataka Ohira, Zhewang Ma (Saitama Univ.), Hiroyuki Deguchi, Mikio Tsuji (Doshisha Univ.) MW2011-105
This paper proposes a new compact cutoff waveguide filter using planar resonators for both the generation of multiple tr... [more] MW2011-105
pp.107-112
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