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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 34  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2022-01-07
14:05
Osaka CENTRAL ELECTRIC CLUB Device characteristics of organic floating-gate memories based on n-channel polymer transistors
Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] OME2021-48
pp.4-8
SDM 2019-11-08
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
pp.27-32
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM 2017-01-30
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] SDM2016-130
pp.1-4
SDM 2016-06-29
16:20
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET
Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45
In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] SDM2016-45
pp.69-74
ED 2016-01-20
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] ED2015-114
pp.13-18
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-25
11:06
Niigata Niigata University Study of temperature dependence on field effect mobility of organic thin-film transistors
Tatsuya Matsumoto, Seung-Kyum Kim, Reiji Hattori (Kyushu Univ.) EID2013-29
In order to clarify the carrier-injection system on organic thin-film transistors (OTFTs), we compared the temperature d... [more] EID2013-29
pp.117-120
ED, MW 2014-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] ED2013-116 MW2013-181
pp.35-39
ED, MW 2014-01-17
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
pp.79-84
OME 2013-03-08
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. B1-2 Design of New Organic Semiconducting Molecules and Their Application to Organic Field-effect Transistors
Koji Nakano (Tokyo Univ. of Agriculture and Tech./JST), Natsuko Chayama, Minh anh Truong, Shunsuke Kodama, Kyoko Nozaki (Univ. of Tokyo) OME2012-108
Furan-fused heteroacenes, dibenzo[d,d']benzo[1,2-b:4,5-b']difurans (DBBDFs) were designed as a new family of organic sem... [more] OME2012-108
pp.13-16
OME, OPE 2012-11-16
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of flexible OFET characteristics by using EFI-SHG -- the effect of bending --
Yohei Abe, Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) OME2012-57 OPE2012-129
We studied the effect of bending on flexible organic field-effect transistors (active layer: TIPS pentacene, gate-insula... [more] OME2012-57 OPE2012-129
pp.13-18
SDM, ED
(Workshop)
2012-06-27
11:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
Kyung Rok Kim, Min Woo Ryu, Sunhae Shin, Hee Cheol Hwang, Kibog Park (UNIST)
We report the first implementation of a modeling and simulation environment for the plasmonic terahertz (THz) detector b... [more]
SDM, ED
(Workshop)
2012-06-27
13:15
Okinawa Okinawa Seinen-kaikan Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.)
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more]
SDM, ED
(Workshop)
2012-06-28
10:40
Okinawa Okinawa Seinen-kaikan [Poster Presentation] Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances.
Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.)
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more]
OME 2011-12-21
16:10
Tokyo Kikai-Shinko-Kaikan Bldg. Organic field-effect transistors with solution-processed graphene electrodes
Koichi Suganuma (Saitama Univ.), Koichiro Saiki (The Univ. of Tokyo), Takuya Goto (Mitsubishi Gas Chemical Company Inc.), Keiji Ueno (Saitama Univ.) OME2011-72
Solution-processed electrodes for organic field effect transistor (OFET) were fabricated using a graphene oxide (GO) sol... [more] OME2011-72
pp.35-39
ED 2011-12-14
14:05
Miyagi Tohoku University Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers -- Effects of AlGaN barrier thinning --
Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB) ED2011-102
Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabr... [more] ED2011-102
pp.13-17
OPE, OME 2011-11-18
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication of Step-Edge Vertical Channel Organic Field-Effect Transistors Using Nanoimprint Lithography
Masahiro Fukiyama, Hiroshi Yamauchi, Masaaki Iizuka, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ.) OME2011-63 OPE2011-138
The reduction of channel length is one of the effective approaches to achieve the low operation voltage and large curren... [more] OME2011-63 OPE2011-138
pp.31-36
OME 2011-09-22
16:35
Osaka Osaka City Central Public Hall Device characteristics of silica nanoparticles dispersed solution-processable organic transistors
Masashi Yoshikawa, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi (Osaka Pref. Univ.), Yoshiki Michiwaki (Fuso Chem. Co., Ltd.), Seiji Watase, Mitsuru Watanabe, Kimihiro Matsukawa (OMTRI), Hiroyoshi Naito (Osaka Pref. Univ.) OME2011-47
The effect of the dispersion of silica nanoparticles (SNPs) on solution-processable organic field-effect transistors (OF... [more] OME2011-47
pp.31-34
CPM, LQE, ED 2010-11-12
11:15
Osaka   Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] ED2010-157 CPM2010-123 LQE2010-113
pp.67-70
ED, SDM 2010-02-22
13:50
Okinawa Okinawaken-Seinen-Kaikan Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors
Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.) ED2009-198 SDM2009-195
Stochastic resonance in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance weak-signal resp... [more] ED2009-198 SDM2009-195
pp.11-15
 Results 1 - 20 of 34  /  [Next]  
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