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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-11-19
Online Online [Invited Talk] Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics
Yusuke Noda (Kanazawa Gakuin Univ.) SDM2020-25
The aim of this study is to clarify the relationship between the dielectric constants and other physical and chemical pr... [more] SDM2020-25
OME 2017-12-28
Tokyo Kikai-Shinko-Kaikan Bldg. Investigation of interactions between Pt atom and carbon supports by a first-principles calculation
Yuta Nakajo (Tokyo Univ. Science), Teruyasu Mizoguchi (The University of Tokyo), Yasuhito Sugano, Masaru Yoshitake, Yumi Tanaka (Tokyo Univ. Science) OME2017-52
To estimate interactions between carbon supports and Pt, which affects the catalytic activity of carbon-supported Pt nan... [more] OME2017-52
CPM 2017-07-21
Hokkaido   Effect of substitution in Ca3Co4O9 on electronic states analyzed by first-principles calculation
Daigo Kobayashi (TUT), Satoru Tanibayashi (NIT, Ichinoseki College), Yuichi Nakamura, Hironaga Uchida, Mitsuteru Inoue (TUT) CPM2017-25
Layered cobalt oxide Ca3Co4O9 (Co349) is expected to be a good thermoelectric material at high temperature region althou... [more] CPM2017-25
SDM, EID 2016-12-12
Nara NAIST First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film
Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] EID2016-18 SDM2016-99
SDM 2015-06-19
Aichi VBL, Nagoya Univ. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] SDM2015-45
MRIS, ITE-MMS 2015-06-04
Miyagi Tohoku Univ. First principles study for the effect of spin fluctuation on the crystalline magnetic anisotropy in L10-type ordered alloys
Naofumi Kobayashi, Kazushige Hyodo, Akimasa Sakuma (Tohoku Univ.) MR2015-3
For the application of high-density magnetic devices, thermal stability of magnetization in materials is one of the key ... [more] MR2015-3
SDM, EID 2014-12-12
Kyoto Kyoto University Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) -- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] EID2014-39 SDM2014-134
LQE, ED, CPM 2014-11-27
Osaka   Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties.
Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2014-83 CPM2014-140 LQE2014-111
We investigate the crystal structure of CaFeO3, LaFeO3 thin films and the DOS calculation results of [(CaFeO3)1/(LaFeO3)... [more] ED2014-83 CPM2014-140 LQE2014-111
SDM 2014-11-06
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Recent Progress in Electronic Device Materials Design by Computational Physics
Hiroyuki Kageshima (Shimane Univ.) SDM2014-101
In the computational physics, the first-principles calculation method is powerful and attractive because it can precisel... [more] SDM2014-101
SDM 2014-06-19
Aichi VBL, Nagoya Univ. Stability of vacancy defect around metal/Ge interfaces; first-principles study
Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] SDM2014-46
CPM, ED, SDM 2014-05-28
Aichi   First-principles simulation on electron-scattering process in magnetoresistive memory
Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.) ED2014-27 CPM2014-10 SDM2014-25
Magnetoresistance memory is expected as emerging memory device due to the desired functions such as non-volatility, fast... [more] ED2014-27 CPM2014-10 SDM2014-25
IBISML 2014-03-06
Nara Nara Women's University Simultaneous prediction of multiple physical properties using multi-task learning
Tomoaki Iwase (Univ. of Tokyo), Atsuto Seko (Kyoto Univ.), Hisashi Kashima (Univ. of Tokyo) IBISML2013-68
We apply several existing techniques and a new model of multi-task learning to the problem of predicting multiple physic... [more] IBISML2013-68
SDM 2012-06-21
Aichi VBL, Nagoya Univ. Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method
Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52
To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] SDM2012-52
SDM 2011-11-11
Tokyo Kikai-Shinko-Kaikan Bldg. Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation
Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] SDM2011-121
SDM 2011-07-04
Aichi VBL, Nagoya Univ. Structure and formation of epitaxial graphene on SiC(0001)
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found... [more] SDM2011-51
SDM 2011-07-04
Aichi VBL, Nagoya Univ. Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study
Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2011-62
Schottky-barrier changes by the structural disorders are studied using the first-principles calculations and adopting Au... [more] SDM2011-62
CPM, SDM, ED 2011-05-19
Aichi Nagoya Univ. (VBL) MOCVD growth of GaN on graphite substrates
Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27
We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] ED2011-14 CPM2011-21 SDM2011-27
ED, LQE, CPM 2009-11-19
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations
Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] ED2009-138 CPM2009-112 LQE2009-117
SDM 2009-06-19
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] SDM2009-28
SDM [detail] 2008-11-14
Tokyo Kikai-Shinko-Kaikan Bldg. First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects
Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] SDM2008-183
 Results 1 - 20 of 20  /   
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