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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2021-01-29
13:50
Online Online High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs
Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] ED2020-33 MW2020-86
pp.30-33
CPM, LQE, ED 2016-12-13
13:00
Kyoto Kyoto University Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) ED2016-74 CPM2016-107 LQE2016-90
Electronic carrier concentrations in corundum-structured α-In2O3 thin films decreased by being doped with a Mg ion. A M... [more] ED2016-74 CPM2016-107 LQE2016-90
pp.85-88
ED 2016-07-23
15:05
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Effects of post-deposition anneal on SiO2 layer on Ga2O3
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29
Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] ED2016-29
pp.11-15
ED 2016-01-20
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] ED2015-114
pp.13-18
SDM 2015-06-19
10:10
Aichi VBL, Nagoya Univ. [Invited Lecture] Al2O3/Ga2O3 interface structure and its surface orientation dependence
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] SDM2015-40
pp.11-16
ED, CPM, SDM 2015-05-28
15:40
Aichi Venture Business Laboratory, Toyohashi University of Technology Growth and preliminary MOSFETs of corundum-structured oxide semiconductors
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23
Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by ... [more] ED2015-21 CPM2015-6 SDM2015-23
pp.27-30
ED, CPM, SDM 2015-05-28
16:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method
Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 &#773... [more] ED2015-22 CPM2015-7 SDM2015-24
pp.31-34
LQE, LSJ 2015-05-22
11:25
Ishikawa   High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline Selenium/Gallium Oxide Heterojunction Photodiode
Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Tokio Nakada (TUS), Toru Okino, Yutaka Hirose, Yoshihisa Kato (Panasonic), Nobukazu Teranishi (University of Hyogo) LQE2015-13
We have developed an stacked image sensor using a thin-film crystalline selenium (c-Se) as a photoconversion layer. The ... [more] LQE2015-13
pp.63-67
CPM 2014-09-05
10:45
Yamagata The 100th Anniversary Hall, Yamagata University RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2014-86
Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxi... [more] CPM2014-86
pp.59-64
ED 2014-08-01
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] ED2014-60
pp.41-46
ED, MW 2014-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] ED2013-116 MW2013-181
pp.35-39
ED, LQE, CPM 2012-11-29
11:30
Osaka Osaka City University Estimation of Surface Fermi level differences in surface-modified GaN crystals
Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.) ED2012-68 CPM2012-125 LQE2012-96
Surface-Fermi-level differences in hexagonal (0001)GaN as a function of the amount of surface oxides were estimated usin... [more] ED2012-68 CPM2012-125 LQE2012-96
pp.13-15
ED, LQE, CPM 2012-11-29
13:55
Osaka Osaka City University Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates
Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates pr... [more] ED2012-71 CPM2012-128 LQE2012-99
pp.25-28
SDM, ED
(Workshop)
2012-06-29
09:15
Okinawa Okinawa Seinen-kaikan [Invited Talk] New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes
Masataka Higashiwaki (NICT/JST), Kohei Sasaki (Tamura Corp./NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.)
{$\beta$}-gallium oxide (Ga{$_{2$}}O{$_{3}$}) has excellent material properties for power device applications represente... [more]
ED, SDM, CPM 2012-05-17
16:45
Aichi VBL, Toyohashi Univ. of Technol. Preparation and evaluation of Ga2O3 oxygen sensors
Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) ED2012-25 CPM2012-9 SDM2012-27
Abstract Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exha... [more] ED2012-25 CPM2012-9 SDM2012-27
pp.39-42
ED, SDM, CPM 2012-05-18
13:25
Aichi VBL, Toyohashi Univ. of Technol. Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions
Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-34 CPM2012-18 SDM2012-36
Gallium oxide (Ga2O3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulf... [more] ED2012-34 CPM2012-18 SDM2012-36
pp.85-89
CPM, SDM, ED 2011-05-20
13:25
Aichi Nagoya Univ. (VBL) Preparation and evaluation of Ga2O3 ovygen sensors
Takahiro Yamamoto, Shinya Kayano, Hiroki Ikeda, Yoshifumi Suzuki, Masaaki Isai (Shizuoka Univ.) ED2011-27 CPM2011-34 SDM2011-40
Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. T... [more] ED2011-27 CPM2011-34 SDM2011-40
pp.135-138
SDM, CPM, ED 2010-05-14
10:50
Shizuoka Shizuoka University (Hamamatsu Campus) Preparation and evaluation of Ga2O3 oxygen sensors
Shinya Kayano, Naoya Yamaguchi, Masaaki Isai (Shizuoka Univ.) ED2010-27 CPM2010-17 SDM2010-27
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. ... [more] ED2010-27 CPM2010-17 SDM2010-27
pp.57-60
ED, CPM, SDM 2009-05-14
14:45
Aichi Satellite Office, Toyohashi Univ. of Technology Property of Ga2O3 films and evaluation of oxygen sensors properties
Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2009-21 CPM2009-11 SDM2009-11
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. ... [more] ED2009-21 CPM2009-11 SDM2009-11
pp.17-20
ED, CPM, SDM 2009-05-14
15:50
Aichi Satellite Office, Toyohashi Univ. of Technology A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications
Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) ED2009-23 CPM2009-13 SDM2009-13
Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from... [more] ED2009-23 CPM2009-13 SDM2009-13
pp.25-30
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