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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2022-01-07 14:05 |
Osaka | CENTRAL ELECTRIC CLUB | Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.)  OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] | OME2021-48 pp.4-8 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-25 14:30 |
Shizuoka | Shizuoka Univ., Hamamatsu | Fabrication of Organic Semiconductor Thin Film on Molecular Orientation Insulating Film and Its Effect on TFT Characteristics Shigeru Okimoto, Yasufumi Iimura (Tokyo Univ. of A&T), Ryuzou Ohno (JSR) EID2017-36 |
We have focused on the control of molecular alignment of pentacene thin film for improving carrier mobility of pentacene... [more] | EID2017-36 pp.25-28 |
| OME, SDM | 2017-04-20 16:45 |
Kagoshima | Tatsugochou Shougaigakushuu Center | A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4 |
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] | SDM2017-4 OME2017-4 pp.15-18 |
| SDM | 2015-10-30 15:00 |
Miyagi | Niche, Tohoku Univ. | Investigation of stacked HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-82 |
In this paper, the effects of HfN1.0 interfacial layer (IL) on the electrical characteristics of HfN1.3 layer formed by ... [more] | SDM2015-82 pp.57-62 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 11:00 |
Aomori | Aomori-Bussankan-Asupamu | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] | R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 pp.9-11 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
| SDM | 2014-10-16 14:50 |
Miyagi | Niche, Tohoku Univ. | Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2014-85 pp.7-12 |
| SDM | 2014-10-16 16:00 |
Miyagi | Niche, Tohoku Univ. | Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87 |
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] | SDM2014-87 pp.19-22 |
| OME | 2014-10-10 11:20 |
Osaka | Osaka University Nakanoshima Center | Emission Properties of Bilayer Organic Light-Emitting Transistors Doped with Phosphorescent Dyes Hirotake Kajii, Hitoshi Tanaka, Ikuya Ikezoe, Mikio Hara, Takahiro Ohtomo, Yutaka Ohmori (Osaka Univ.) OME2014-39 |
The fabrication and characteristics of top-gate type bilayer polymer light-emitting transistors with phosphorescent dye ... [more] | OME2014-39 pp.9-13 |
| SDM, OME | 2014-04-11 10:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus) SDM2014-13 OME2014-13 |
For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plasti... [more] | SDM2014-13 OME2014-13 pp.55-57 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| SDM, OME | 2012-04-28 11:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17 |
SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at ... [more] | SDM2012-17 OME2012-17 pp.75-77 |
| ED | 2012-04-18 14:15 |
Yamagata | Yamagata University | High Performance Polymer Thin-Film Transistor with Thermally Curable Fluoro-polymer Gate Insulator Tsukuru Minamiki (Yamagata Univ.), Masahiro Itoh (AGC), Shinya Oku, Kenjiro Fukuda, Daisuke Kumaki, Makoto Mizukami, Shizuo Tokito (Yamagata Univ.) ED2012-4 |
Crystallinity and orientation of polymer semiconductor thin-film is strongly dependent to the surface energy of the subs... [more] | ED2012-4 pp.15-18 |
| ED, SDM | 2012-02-08 13:25 |
Hokkaido | Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 |
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] | ED2011-156 SDM2011-173 pp.83-87 |
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| ED, SDM | 2012-02-08 13:50 |
Hokkaido | Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174 |
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] | ED2011-157 SDM2011-174 pp.89-93 |
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| SDM | 2011-10-20 15:20 |
Miyagi | Tohoku Univ. (Niche) | Effect of Si surface roughness on electrical characteristics of HfON gate insulator Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-100 |
In this paper, the effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by the ele... [more] | SDM2011-100 pp.17-20 |
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