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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2014-05-29
11:15		 Aichi (Aichi, Aichi) Surface treatment and homoepitaxial growth on AlN substrate
Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35		 Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-u... [more] ED2014-37 CPM2014-20 SDM2014-35
pp.97-100
CPM, ED, LQE 2007-10-12
13:50		 Fukui Fukui Univ. (Fukui) Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74		 We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] ED2007-173 CPM2007-99 LQE2007-74
pp.85-88
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