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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2017-04-21
14:05		 Kagoshima Tatsugochou Shougaigakushuu Center Charge storage behavior of zirconia ceramics under DC electric field -- Preparation of Y-TZP bioceramics with enhanced LTD durability --
Yumi Tanaka (Tokyo Univ. of Sci.), Hiroyuki Hara (Kyushu Univ.) SDM2017-8 OME2017-8		 Yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) is an important load-bearing bioceramic. However, a phenomenon... [more] SDM2017-8 OME2017-8
pp.35-39
VLD 2014-03-05
13:25		 Okinawa Okinawa Seinen Kaikan Experiment and Analysis on Temperature Dependence of Delay and Energy for Subthreshold Circuits
Hiroki Kushida, Youhua Shi, Nozomu Togawa (Waseda Univ.), Kimiyoshi Usami (Shibaura Inst. of Tech.), Masao Yanagisawa (Waseda Univ.) VLD2013-161		 Low voltage design has been used in order to reduce the energy dissipation of mobile network equipment. However, as supp... [more] VLD2013-161
pp.147-151
ICD 2010-12-17
13:50		 Tokyo RCAST, Univ. of Tokyo Misleading Energy and Performance Claims in Sub/Near Threshold Digital Systems
Yu Pu, Xin Zhang, Jim Huang (Univ. of Tokyo), Atsushi Muramatsu, Masahiro Nomura, Koji Hirairi, Hidehiro Takata, Taro Sakurabayashi, Shinji Miyano (STARC), Makoto Takamiya, Takayasu Sakurai (Univ. of Tokyo) ICD2010-122		 Many of us in the field of ultra-low-Vdd processors experience difficulty in assessing the sub/near threshold circuit te... [more] ICD2010-122
pp.135-140
SDM, ED 2008-07-09
11:40		 Hokkaido Kaderu２・７ [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60		 We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] ED2008-41 SDM2008-60
pp.9-14
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