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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2017-12-22
10:45		 Kyoto Kyoto University Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73		 To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-12 SDM2017-73
pp.5-8
SDM, EID 2017-12-22
11:15		 Kyoto Kyoto University Electric properties in Al-N codoped p-type 4H-SiC epilayers -- Comparison between temperature dependent resistivity in Al-doped and codoped samples --
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75		 To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] EID2017-14 SDM2017-75
pp.13-16
CPM, ED, SDM 2014-05-29
13:20		 Aichi   Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36		 Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] ED2014-38 CPM2014-21 SDM2014-36
pp.101-104
SDM 2011-12-16
10:40		 Nara NAIST Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties
Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134		 We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] SDM2011-134
pp.11-15
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