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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-11-11
Online Online [Invited Talk] Characterization techniques of plasma process-induced defect creation in electronic devices
Koji Eriguchi (Kyoto Univ.) SDM2021-57
Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] SDM2021-57
SDM 2021-01-28
Online Online [Invited Talk] Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices
Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) SDM2020-53
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] SDM2020-53
ICD, SDM 2014-08-05
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on inte... [more]
SDM2014-79 ICD2014-48
SDM 2014-02-28
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Trend of practical technology in advanced low-k integration
Naoya Inoue (Renesas Electronics Corp.) SDM2013-166
Looking at the trend in Cu/Low-k interconnect technology, integration issues and solutions are discussed from the viewpo... [more] SDM2013-166
SDM 2012-10-25
Miyagi Tohoku Univ. (Niche) Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)
Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more]
SDM 2011-10-21
Miyagi Tohoku Univ. (Niche) [Invited Talk] Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] SDM2011-110
 Results 1 - 6 of 6  /   
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