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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-11 15:15 |
Online | Online | [Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices Koji Eriguchi (Kyoto Univ.)  SDM2021-57 |
Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] | SDM2021-57 pp.23-28 |
| SDM | 2021-01-28 15:35 |
Online | Online | [Invited Talk]
Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) SDM2020-53 |
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] | SDM2020-53 pp.17-20 |
| ICD, SDM | 2014-08-05 14:55 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48 |
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature Instability (BTI), become dominant on inte... [more] |
SDM2014-79 ICD2014-48 pp.93-98 |
| SDM | 2014-02-28 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Trend of practical technology in advanced low-k integration Naoya Inoue (Renesas Electronics Corp.) SDM2013-166 |
Looking at the trend in Cu/Low-k interconnect technology, integration issues and solutions are discussed from the viewpo... [more] | SDM2013-166 pp.7-12 |
| SDM | 2012-10-25 16:35 |
Miyagi | Tohoku Univ. (Niche) | Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more] | |
| SDM | 2011-10-21 14:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110 |
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] | SDM2011-110 pp.73-78 |
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