Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2023-10-13 16:00 |
Miyagi |
Niche, Tohoku Univ. |
Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology) SDM2023-58 |
In recent years, Thin film transistors have been widely used as switching devices in flat panel displays, such as liquid... [more] |
SDM2023-58 pp.27-33 |
ICD, SDM, ITE-IST [detail] |
2020-08-07 11:25 |
Online |
Online |
Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9 |
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] |
SDM2020-9 ICD2020-9 pp.41-46 |
SDM, OME |
2020-04-13 14:00 |
Okinawa |
Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus) |
We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films with smooth surface. ... [more] |
|
SDM |
2018-10-17 15:20 |
Miyagi |
Niche, Tohoku Univ. |
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] |
SDM2018-54 pp.11-14 |
SDM, ICD, ITE-IST [detail] |
2018-08-07 12:55 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
[Invited Talk]
Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16 |
In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the result... [more] |
SDM2018-29 ICD2018-16 pp.21-24 |
SDM, EID |
2016-12-12 16:00 |
Nara |
NAIST |
Letter Recognition of Cellar Neural Network using Thin Film Transistors Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-26 SDM2016-107 |
We are developing cellular neural networks using thin film transistors. We realized the neuron consisting of eight TFTs ... [more] |
EID2016-26 SDM2016-107 pp.75-79 |
SDM, OME |
2016-04-09 11:15 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15 |
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] |
SDM2016-15 OME2016-15 pp.61-65 |
SDM |
2016-01-28 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121 |
High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a... [more] |
SDM2015-121 pp.5-8 |
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] |
2015-01-23 09:00 |
Kyoto |
Ryukoku University |
Magnetic-Field Sensor using Poly-Si Hall Device
-- Sensitivity Improved by High Voltage Application and OpAmp Circuits -- Akito Yoshikawa, Takaaki Matsumoto, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUOJ) EID2014-47 |
We are executing research and development of magnetic field sensors using poly-Si Hall devices. In this study, in order ... [more] |
EID2014-47 pp.49-52 |
SDM, EID |
2014-12-12 13:00 |
Kyoto |
Kyoto University |
Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2014-21 SDM2014-116 |
We have evaluated photoconductivities of n-ch, p-ch, and pin-ch poly-Si TFPTs for photosensor application. It was observ... [more] |
EID2014-21 SDM2014-116 pp.41-44 |
SDM, EID |
2014-12-12 13:30 |
Kyoto |
Kyoto University |
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] |
EID2014-23 SDM2014-118 pp.51-54 |
SDM, EID |
2014-12-12 13:45 |
Kyoto |
Kyoto University |
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-24 SDM2014-119 |
We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si ... [more] |
EID2014-24 SDM2014-119 pp.55-59 |
SDM, EID |
2014-12-12 14:00 |
Kyoto |
Kyoto University |
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120 |
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] |
EID2014-25 SDM2014-120 pp.61-65 |
SDM |
2013-12-13 09:40 |
Nara |
NAIST |
Photo Sensor using Poly-Si Thin-Film Devices Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-118 |
In this study, we developed photo sensors using illuminance dependence of current-voltage characteristics of pin Thin-Fi... [more] |
SDM2013-118 pp.13-18 |
SDM |
2013-12-13 11:20 |
Nara |
NAIST |
Design and development of Gate Array using Poly-Si TFT Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-123 |
In this study, we performed the design and development of gate arrays using poly-Si TFTs. We designed and evaluated the... [more] |
SDM2013-123 pp.43-47 |
MRIS, ITE-MMS |
2013-07-12 15:45 |
Tokyo |
Chuo Univ. |
3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11 |
A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] |
MR2013-11 pp.31-34 |
SDM |
2012-12-07 13:15 |
Kyoto |
Kyoto Univ. (Katsura) |
Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.) SDM2012-124 |
Although artificial retinas have been developed using LSI technology to date, there were issues from the viewpoints of ... [more] |
SDM2012-124 pp.53-57 |
SDM, ED (Workshop) |
2012-06-27 16:15 |
Okinawa |
Okinawa Seinen-kaikan |
The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field Meng-Shan Chi, Tzung-Ju Lin, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.) |
We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region... [more] |
|
SDM, OME |
2012-04-27 16:50 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9 |
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si ... [more] |
SDM2012-9 OME2012-9 pp.41-44 |
SDM |
2011-12-16 14:40 |
Nara |
NAIST |
Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142 |
Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and ... [more] |
SDM2011-142 pp.53-58 |