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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 40  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2020-08-07
11:25
Online Online Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope
Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] SDM2020-9 ICD2020-9
pp.41-46
SDM, OME 2020-04-13
14:00
Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)
Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing
Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus)
We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films with smooth surface. ... [more]
SDM 2018-10-17
15:20
Miyagi Niche, Tohoku Univ. Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] SDM2018-54
pp.11-14
SDM, ICD, ITE-IST [detail] 2018-08-07
12:55
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16
In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the result... [more] SDM2018-29 ICD2018-16
pp.21-24
SDM, EID 2016-12-12
16:00
Nara NAIST Letter Recognition of Cellar Neural Network using Thin Film Transistors
Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-26 SDM2016-107
We are developing cellular neural networks using thin film transistors. We realized the neuron consisting of eight TFTs ... [more] EID2016-26 SDM2016-107
pp.75-79
SDM, OME 2016-04-09
11:15
Okinawa Okinawa Prefectural Museum & Art Museum Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack
Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] SDM2016-15 OME2016-15
pp.61-65
SDM 2016-01-28
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility
Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121
High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a... [more] SDM2015-121
pp.5-8
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2015-01-23
09:00
Kyoto Ryukoku University Magnetic-Field Sensor using Poly-Si Hall Device -- Sensitivity Improved by High Voltage Application and OpAmp Circuits --
Akito Yoshikawa, Takaaki Matsumoto, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUOJ) EID2014-47
We are executing research and development of magnetic field sensors using poly-Si Hall devices. In this study, in order ... [more] EID2014-47
pp.49-52
SDM, EID 2014-12-12
13:00
Kyoto Kyoto University Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs
Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2014-21 SDM2014-116
We have evaluated photoconductivities of n-ch, p-ch, and pin-ch poly-Si TFPTs for photosensor application. It was observ... [more] EID2014-21 SDM2014-116
pp.41-44
SDM, EID 2014-12-12
13:30
Kyoto Kyoto University Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] EID2014-23 SDM2014-118
pp.51-54
SDM, EID 2014-12-12
13:45
Kyoto Kyoto University Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-24 SDM2014-119
We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si ... [more] EID2014-24 SDM2014-119
pp.55-59
SDM, EID 2014-12-12
14:00
Kyoto Kyoto University Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] EID2014-25 SDM2014-120
pp.61-65
SDM 2013-12-13
09:40
Nara NAIST Photo Sensor using Poly-Si Thin-Film Devices
Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-118
In this study, we developed photo sensors using illuminance dependence of current-voltage characteristics of pin Thin-Fi... [more] SDM2013-118
pp.13-18
SDM 2013-12-13
11:20
Nara NAIST Design and development of Gate Array using Poly-Si TFT
Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-123
In this study, we performed the design and development of gate arrays using poly-Si TFTs. We designed and evaluated the... [more] SDM2013-123
pp.43-47
MRIS, ITE-MMS 2013-07-12
15:45
Tokyo Chuo Univ. 3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage
Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11
A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] MR2013-11
pp.31-34
SDM 2012-12-07
13:15
Kyoto Kyoto Univ. (Katsura) Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors
Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.) SDM2012-124
Although artificial retinas have been developed using LSI technology to date, there were issues from the viewpoints of ... [more] SDM2012-124
pp.53-57
SDM, ED
(Workshop)
2012-06-27
16:15
Okinawa Okinawa Seinen-kaikan The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field
Meng-Shan Chi, Tzung-Ju Lin, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.)
We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region... [more]
SDM, OME 2012-04-27
16:50
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si ... [more] SDM2012-9 OME2012-9
pp.41-44
SDM 2011-12-16
14:40
Nara NAIST Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors
Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142
Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and ... [more] SDM2011-142
pp.53-58
SDM 2011-11-10
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-117
pp.11-15
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