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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
Aichi Nagoya Univ. VBL3F Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD
Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] SDM2018-22
CPM 2014-09-05
Yamagata The 100th Anniversary Hall, Yamagata University RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2014-86
Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxi... [more] CPM2014-86
SDM, ED 2008-07-09
Hokkaido Kaderu2・7 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] ED2008-42 SDM2008-61
SDM, ED 2008-07-10
Hokkaido Kaderu2・7 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] ED2008-54 SDM2008-73
SDM 2007-06-08
Hiroshima Hiroshima Univ. ( Faculty Club) Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs
Masayuki Terai, Shinji Fujieda (NEC) SDM2007-40
The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability ... [more] SDM2007-40
SDM, ED, CPM 2007-05-25
Shizuoka Shizuoka Univ. ZnO thin layer growen by sideflow RPE-MOCVD
Masahiko Adachi, Tuyoshi Aoshima, Atsushi Nakamura, Jiro Temmyo (Shizuoka Univ.)
ZnO layers growth on a-plane sapphire(11-20)substrates by sideflow remote plasma enhanced MOCVD (RPE-MOCVD)was studied. ... [more]
 Results 1 - 6 of 6  /   
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