IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: Recent 10 Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 51  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
US 2024-11-07
15:55
Aichi AICHI INSTITUTE OF TECHNOLOGY Univ (Aichi) c-Axis tilted LiNbO3 off-angle epitaxial thin film SMR
Hiroki Uchida, Takahiko Yanagitani (Waseda Univ.) US2024-58
The c-axis tilted LiNbO3 thin film bulk acoustic wave (BAW) filter is anticipated to exhibit a high electromechanical co... [more] US2024-58
pp.35-40
SDM 2024-10-24
14:30
Miyagi NICHe, Tohoku Univ. (Miyagi) Investigation of Ferroelectric HfNx Formation on Si(100) Substrates by Two-Step Deposition Method
Kaimu Hamada, Kangbai Li, Shun-ichiro Ohmi (Tokyo Tech) SDM2024-48
In this work, we investigated the ferroelectric HfN film formation on Si substrates with nitrogen concentration utilizin... [more] SDM2024-48
pp.22-25
SDM 2024-10-24
14:50
Miyagi NICHe, Tohoku Univ. (Miyagi) Investigation of post-metallization annealing condition on the ferroelectric HfN1.15 thin film formation
Kangbai Li, Shun-ichiro Ohmi (Tokyo Tech.) SDM2024-49
In this paper, the annealing condition and Ar/N2 gas flow rate dependences on the ferroelectric HfN1.15 formed by ECR-pl... [more] SDM2024-49
pp.26-28
CPM, LQE, OPE, EMD, R 2024-08-29
13:55
Aomori Hirosaki University (Aomori, Online)
(Primary: On-site, Secondary: Online)
Annealing effects on the photovoltaic properties of boron carbide films prepared by magnetron sputtering
Yusuke Hayashi, Tatsuya Nishida, Ryoya Katayama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) R2024-13 EMD2024-7 CPM2024-23 OPE2024-63 LQE2024-10
We have prepared amorphous boron carbide (BxC) films by RF magnetron sputtering using a boron carbide target (B4C) and i... [more] R2024-13 EMD2024-7 CPM2024-23 OPE2024-63 LQE2024-10
pp.5-8
MRIS, ITE-MMS 2024-06-06
15:00
Miyagi Tohoku Univ., RIEC (Miyagi, Online)
(Primary: On-site, Secondary: Online)
High rate RF sputtering of MgO underlayer by hot cathode method with porous target for heat assisted magnetic recording media
Kota Yamada, Daiki Miyazaki, Yuki Hirokawa, Seong-Jae Jeon, Akihiro Shimizu (Tohoku Univ.), Kosaku Iwatani (TOSHIMA Manufacturing Co., Ltd.), Shintaro Hinata, Tomoyuki Ogawa, Shin Saito (Tohoku Univ.) MRIS2024-3
A high thermal stress tolerant target for hot cathode RF sputtering is proposed for high rate deposition of MgO underlay... [more] MRIS2024-3
pp.12-17
EA, US
(Joint)
2023-12-22
13:00
Fukuoka (Fukuoka) [Poster Presentation] Fabrication of epitaxial piezoelectric layer/acoustic Bragg reflector structure by etching of epitaxial sacrificial layer
Satoshi Tokai, Takahiko Yanagitani (Waseda Univ.) US2023-60
Q factor and power durability are expected to be improve d by using s ingle crystalline piezoelectric thin films in BAW ... [more] US2023-60
pp.24-29
ED 2023-12-07
14:50
Aichi WINC AICHI (Aichi) Fabrication of Hafnium Nitride Spindt-type Field Emitter Arrays by Triode High Power Pulsed Magnetron Sputtering
Shun Kondo (Seikei University/AIST), Takeo Nakano, Md. Suruz Mian (Seikei University), Masayoshi Nagao, Hiromasa Murata (AIST) ED2023-41
We have been attempting to fabricate Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPM... [more] ED2023-41
pp.11-14
US 2023-11-27
13:45
Shizuoka Shizuoka University (Shizuoka) Improvement of in-plane orientation and piezoelectricity of c-axis parallel oriented ZnO films and their application to thickness shear-mode resonators -- Investigation on limiting of particle irradiation to substrate during sputtering deposition --
Naoki Tomiyama, Shinji Takayanagi (Doshisha Univ.), Yanagitani Takahiko (Waseda Univ.) US2023-49
ZnO films with the crystalline c-axis parallel to the substrate can excite shear waves and are suitable for thickness-sh... [more] US2023-49
pp.34-39
SDM 2023-10-13
17:00
Miyagi Niche, Tohoku Univ. (Miyagi) A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure
Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] SDM2023-61
pp.46-49
MIKA
(3rd)
2023-10-10
15:35
Okinawa Okinawa Jichikaikan (Okinawa, Online)
(Primary: On-site, Secondary: Online)
[Poster Presentation] Epitaxial piezoelectric thin film multilayer structure for RF filters
Satoshi Tokai, Yanagitani Takahiko (Waseda Univ.)
Wireless communication devices such as smartphones are equipped with many frequency filters to transmit and receive only... [more]
CPM 2023-08-01
10:05
Hokkaido (Hokkaido, Online)
(Primary: On-site, Secondary: Online)
Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film
Kazuki Ueda, Kazunobu Wkamatsu, Takeyasu Saito, Naoki Okamoto (Osaka Metropolitan Univ.) CPM2023-20
Currently, Cu is the main wiring material in leading-edge semiconductor devices. However, since Cu easily diffuses into ... [more] CPM2023-20
pp.33-35
SDM, OME 2023-04-22
10:05
Okinawa Okinawaken Seinen Kaikan (Okinawa, Online)
(Primary: On-site, Secondary: Online)
Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne
Tatsuya Okada, C. J. Koswaththage (Univ. Ryukyus), Takashi Kajiwar, Taizoh Sadoh (Kyushu Univ), Takashi Noguchi (Univ. Ryukyus) SDM2023-8 OME2023-8
For realizing high crystallinity InSb films on low-cost insulating substrate, we investigate the crystallization using R... [more] SDM2023-8 OME2023-8
pp.30-31
SDM, OME 2023-04-22
10:30
Okinawa Okinawaken Seinen Kaikan (Okinawa, Online)
(Primary: On-site, Secondary: Online)
Crystallization of InSb Films on Glass by RTA
Takashi Kajiwara (Kyushu Univ.), Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi (Univ. of the Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2023-9 OME2023-9
To achieve low-cost and high-mobility InSb thin films, we studied the crystallization of InSb films sputtered on a glass... [more] SDM2023-9 OME2023-9
pp.32-33
OME 2023-01-27
14:10
Kochi Kochi Shoko Kaikan (Kochi, Online)
(Primary: On-site, Secondary: Online)
Improvement of Electrocatalytic Performance for Nickel Nanoparticles Modified Carbon Film Electrodes
Niwa Osamu, Ohta Saki, Ohtani Kazuya, Koike Ayaka, Takahashi Shota (Saiko), Kamata Tomoyuki, Kato Dai (AIST), Shiba Shunsuke (Ehime Univ.) OME2022-76
Metal nanoparticles have been expected to apply for electrodes of fuel cells and enzyme free glucose sensors due to thei... [more] OME2022-76
pp.9-13
EA, US
(Joint)
2022-12-22
16:50
Hiroshima Satellite Campus Hiroshima (Hiroshima) [Poster Presentation] Sputter epitaxial LiNbO3 film shear mode thin film resonators
Shinya Kudo (Wseda Univ.), Takahiko Yanagitani (Waseda Univ.) US2022-66
LiNbO3 have been used for the SAW filters because of their high Q and k. However, LiNbO3 filter have not used in the BAW... [more] US2022-66
pp.86-91
ED 2022-12-08
14:10
Aichi 12/8 Nagoya University, 12/9 WINC AICHI (Aichi) Measurement of work function of hafnium nitride thin films prepared by dc and rf magnetron sputtering
Tomoaki Osumi (Kyoto Univ.), Masayoshi Nagao (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2022-53
Hafnium nitride(HfN) thin films were prepared by dc and rf magnetron sputtering. The nitrogen compositions of HfN thin f... [more] ED2022-53
pp.15-17
SDM 2022-10-19
17:20
Online Online (Online) A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] SDM2022-63
pp.38-42
CPM 2022-08-04
16:15
Hokkaido (Hokkaido) Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering
Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Hirokazu Fukidome (Touhoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2022-15
We have deposited amorphous boron carbide (B4C) films and hydrogenated amorphous B4C (B4C:H) films by RF magnetron sputt... [more] CPM2022-15
pp.14-17
SDM, ED, CPM 2022-05-27
14:40
Online Online (Online) Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications
Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] ED2022-10 CPM2022-4 SDM2022-17
pp.13-16
CPM 2021-10-27
10:30
Online Online (Online) Study on the low-temperature deposition method of SiNx film for Cu-TSV
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) CPM2021-21
For Cu through silicon via in the 3D-LSI, It is desired to realize a deposition method of an insulating film less than 2... [more] CPM2021-21
pp.5-7
 Results 1 - 20 of 51  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan