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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
10:25
Osaka Osaka City University Media Center Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2015-81 CPM2015-116 LQE2015-113
Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its... [more] ED2015-81 CPM2015-116 LQE2015-113
pp.69-72
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