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| Presentation | 2010-01-14 10:00 InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
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| PDF Download Link |  ED2009-181 MW2009-164 Link to ES Tech. Rep. Archives: ED2009-181 MW2009-164 |
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