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| Presentation | 2012-07-26 09:30 An S-Band 170W/70% Partially-Matched GaN HEMT Power Amplifier -- Efficiency Increase by Harmonic Termination for GaN-on-Si Device -- Naoki Kosaka, Hiromitsu Uchida, Hifumi Noto, Koji Yamanaka, Masatoshi Nakayama, Yoshihito Hirano, Akira Inoue, Yoichi Nogami, Ko Kanaya (Mitsubishi Electric Corp.) |
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| PDF Download Link |  MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 Link to ES Tech. Rep. Archives: MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 |
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